IXTP2N80 Equivalent & Substitute Parts

Part Overview

The IXTP2N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 2A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-220-3 through-hole package and is designed for high-voltage switching applications. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTP2N80

IXYSIn Stock: 821IXTP2N80 Datasheet

Current PartRFQ

IXFP7N80P

IXYSIn Stock: 2341IXFP7N80P Datasheet

MFR RecommendedRFQ

STP2N80K5

STMicroelectronicsIn Stock: 2304STP2N80K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTP2N80 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
• Continuous Drain Current (Id): Must meet or exceed 2A at 25°C
• Package Type: Must be TO-220-3 through-hole configuration
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must span -55°C to 150°C

Secondary Compatibility Parameters:

• Gate drive voltage compatibility at 10V
• Gate threshold voltage within acceptable switching margins
• Input capacitance and gate charge characteristics suitable for existing gate drive circuits

The substitute parts listed below satisfy these criteria with varying performance enhancements in current handling, power dissipation, and on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

IXFP7N80P (IXYS Manufacturer Recommended Substitute)

The IXFP7N80P is the manufacturer-recommended equivalent for the obsolete IXTP2N80. This device maintains identical voltage rating (800V Vdss) and exceeds the current requirement with 7A continuous drain current. The part is actively manufactured and maintains full RoHS3 compliance and REACH unaffected status. The IXFP7N80P features enhanced power dissipation capability (200W vs. 54W) and improved on-resistance characteristics (1.44Ohm vs. 6.2Ohm), providing superior thermal performance and efficiency in high-voltage switching applications. This part is suitable for direct substitution in applications where the original IXTP2N80 was specified.

STP2N80K5 (STMicroelectronics Similar Substitute)

The STP2N80K5 provides electrical equivalence with matched 800V Vdss and 2A continuous drain current ratings. This STMicroelectronics device is actively produced and maintains full RoHS3 compliance and REACH unaffected status. The STP2N80K5 offers improved on-resistance (4.5Ohm vs. 6.2Ohm) and significantly reduced gate charge (3nC vs. 22nC), resulting in faster switching characteristics and lower gate drive power requirements. The lower input capacitance (95pF vs. 440pF) provides additional benefits for high-frequency switching applications. This part is suitable for direct substitution where current and voltage ratings are the primary design constraints.

Both substitute parts are actively manufactured, ensuring long-term availability and supply chain continuity for the obsolete IXTP2N80.

Frequently Asked Questions (FAQ)

Q: Can the IXFP7N80P be used as a direct replacement for the IXTP2N80?

A: Yes. The IXFP7N80P maintains the same 800V Vdss rating, exceeds the 2A current requirement, and uses the identical TO-220-3 through-hole package. The higher current rating (7A) and improved on-resistance provide enhanced performance without requiring circuit modifications.

Q: What is the difference between the IXFP7N80P and STP2N80K5?

A: Both parts meet the voltage and current requirements of the IXTP2N80. The IXFP7N80P offers higher current capacity (7A vs. 2A) and greater power dissipation (200W vs. 45W), making it suitable for higher-power applications. The STP2N80K5 provides lower gate charge (3nC vs. 32nC) and reduced input capacitance, offering faster switching and lower gate drive power consumption. Selection depends on application-specific requirements for current handling and switching speed.

Q: Are both substitute parts available in the same package as the original IXTP2N80?

A: Yes. Both the IXFP7N80P and STP2N80K5 are supplied in TO-220-3 through-hole packages, matching the original IXTP2N80 package configuration. No PCB layout modifications are required for substitution.

Q: Do the substitute parts meet the same compliance standards as the IXTP2N80?

A: Yes. Both the IXFP7N80P and STP2N80K5 are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the compliance profile of the original IXTP2N80.

Q: What is the operating temperature range for the substitute parts?

A: Both substitute parts operate across the same temperature range as the original IXTP2N80: -55°C to 150°C (TJ). No thermal design changes are required.

Q: Which substitute part should be selected for a new design?

A: For new designs, the IXFP7N80P is recommended as the manufacturer-designated equivalent. It provides superior performance characteristics, active production status, and manufacturer support. The STP2N80K5 is suitable for applications where gate charge and switching speed are critical design parameters.

Q: Are there any gate drive circuit modifications required when substituting these parts?

A: The substitute parts maintain 10V gate drive voltage compatibility with the original IXTP2N80. Gate threshold voltages are within acceptable switching margins. However, the STP2N80K5 features significantly lower gate charge (3nC vs. 22nC), which may reduce gate drive power consumption. Existing gate drive circuits will function without modification, though optimization for the lower gate charge may be beneficial.