IXTP2N60P N-Channel MOSFET 600V 2A Equivalent & Substitute Parts

Part Overview

The IXTP2N60P is an N-Channel MOSFET rated for 600V drain-to-source voltage with 2A continuous drain current in a Through Hole TO-220-3 package. Manufactured by IXYS under the Polar™ series, this device is designed for high-voltage switching applications requiring 55W power dissipation capability.

The IXTP2N60P is classified as Obsolete. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production builds and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	2	A
Rds On (Max) @ 1A, 10V	5.1	Ohm
Power Dissipation (Max)	55	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTP2N60P is determined by the following critical parameters:

Electrical Compatibility Requirements:

FET Type: N-Channel (must match)
Drain to Source Voltage (Vdss): Substitute must equal or exceed 600V
Continuous Drain Current (Id): Substitute must equal or exceed 2A at 25°C
Power Dissipation: Substitute must equal or exceed 55W
Operating Temperature Range: Substitute must cover -55°C to 150°C

Mechanical Compatibility Requirements:

Mounting Type: Through Hole (must match)
Package Type: TO-220 or TO-220-3 (compatible footprints)

The IXTP2N65X2 meets all substitution criteria. It maintains N-Channel topology, exceeds the voltage rating (650V vs. 600V), matches the current rating (2A), maintains power dissipation (55W), and operates within the required temperature range. Both devices use compatible Through Hole TO-220 package variants suitable for the same PCB footprint.

Parameter Comparison

Parameter	IXTP2N60P	IXTP2N65X2	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	650	V
Current - Continuous Drain (Id) @ 25°C	2	2	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ 1A, 10V	5.1	2.3	Ohm
Vgs(th) (Max) @ 250µA	5	5	V
Gate Charge (Qg) (Max) @ 10V	7	4.3	nC
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss) (Max) @ 25V	240	180	pF
Power Dissipation (Max)	55	55	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—
REACH Status	REACH Unaffected	REACH Unaffected	—
ECCN	EAR99	EAR99	—

Engineering Selection Recommendations

IXTP2N65X2 as Primary Substitute:

The IXTP2N65X2 is the direct substitute for the obsolete IXTP2N60P. Both devices are manufactured by IXYS and share the same base product number (IXTP2), confirming design lineage and compatibility.

Compliance and Status:

The IXTP2N60P is Obsolete; the IXTP2N65X2 is Active, ensuring ongoing availability and manufacturing support.
Both devices maintain REACH Unaffected status and EAR99 ECCN classification.
The IXTP2N65X2 is RoHS3 Compliant, meeting current environmental standards.

Electrical Performance:

The IXTP2N65X2 provides a 50V higher voltage rating (650V vs. 600V), offering improved margin in high-voltage applications.
On-resistance is significantly reduced (2.3Ω vs. 5.1Ω at 1A, 10V), resulting in lower power losses and improved thermal efficiency.
Gate charge is reduced (4.3nC vs. 7nC), enabling faster switching characteristics.
Input capacitance is reduced (180pF vs. 240pF), reducing gate drive requirements.

Mechanical Compatibility:

Both devices use Through Hole mounting in TO-220-3 package format, ensuring direct PCB footprint compatibility.
No layout modifications are required for substitution.

Frequently Asked Questions (FAQ)

Q: Can the IXTP2N65X2 directly replace the IXTP2N60P in existing designs?

A: Yes. The IXTP2N65X2 is electrically and mechanically compatible with the IXTP2N60P. Both devices are N-Channel MOSFETs with identical continuous drain current (2A), matching operating temperature range (-55°C to 150°C), and compatible TO-220-3 Through Hole packages. The higher voltage rating (650V vs. 600V) and improved on-resistance of the IXTP2N65X2 provide performance benefits without requiring design changes.

Q: What are the key differences between these two devices?

A: The primary differences are: (1) Drain-to-Source Voltage: IXTP2N65X2 is rated 650V versus 600V for the IXTP2N60P; (2) On-Resistance: IXTP2N65X2 has 2.3Ω versus 5.1Ω for the IXTP2N60P at 1A, 10V; (3) Gate Charge: IXTP2N65X2 has 4.3nC versus 7nC for the IXTP2N60P; (4) Input Capacitance: IXTP2N65X2 has 180pF versus 240pF for the IXTP2N60P; (5) Product Status: IXTP2N65X2 is Active while IXTP2N60P is Obsolete.

Q: Are there any package compatibility concerns?

A: No. Both devices use Through Hole TO-220-3 packages with identical pin configurations and footprints. Direct PCB substitution is possible without layout modifications.

Q: Does the IXTP2N65X2 require different gate drive circuitry?

A: No. Both devices have identical maximum gate-source voltage (±30V) and threshold voltage specifications (5V @ 250µA). Gate drive circuits designed for the IXTP2N60P operate directly with the IXTP2N65X2. The reduced gate charge of the IXTP2N65X2 may allow faster switching with the same drive circuit.

Q: What is the impact of the lower on-resistance in the IXTP2N65X2?

A: The reduced on-resistance (2.3Ω vs. 5.1Ω) decreases conduction losses and heat generation during operation. This results in lower junction temperatures and improved thermal performance, extending device lifetime and reducing cooling requirements.

Q: Are both devices compliant with current environmental regulations?

A: The IXTP2N65X2 is RoHS3 Compliant. Both devices maintain REACH Unaffected status and EAR99 ECCN classification, meeting current regulatory requirements for component procurement and export.

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