IXTP2N100 N-Channel MOSFET 1000V 2A Equivalent & Substitute Parts

Part Overview

The IXTP2N100 is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for high-voltage switching applications requiring 100W power dissipation capability. The part is Active status and RoHS3 compliant.

Equivalent and substitute parts are identified when applications require alternative sourcing, inventory availability, or when design specifications permit operation within the electrical and mechanical parameter ranges of alternative devices. Substitute parts must maintain compatibility across drain-to-source voltage, continuous drain current, gate drive voltage, operating temperature range, and through-hole mounting configuration.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	7	Ohm @ 1A, 10V
Power Dissipation (Max)	100	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-220-3
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the IXTP2N100 are qualified based on the following criteria:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET technology
Drain to Source Voltage (Vdss): Equal to or greater than 1000V
Continuous Drain Current (Id): Equal to or greater than 2A at 25°C
Drive Voltage: 10V gate drive compatibility
Mounting Type: Through-hole TO-220 package family
Operating Temperature: -55°C to 150°C range
Compliance: RoHS3 compliant, REACH unaffected

Substitution Logic: Parts meeting or exceeding the IXTP2N100 electrical specifications in drain voltage and current capacity are classified as direct substitutes. Devices with equal or lower on-resistance (Rds On) at specified gate voltage provide equivalent or improved performance. Power dissipation capability must support the application thermal requirements. All substitute parts maintain identical operating temperature range and through-hole mounting compatibility.

Parameter Comparison

Parameter	IXTP2N100	STF3NK100Z	STP2NK100Z	STP2NK90Z
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	1000 V	1000 V	1000 V	900 V
Current - Continuous Drain (Id) @ 25°C	2 A	2.5 A	1.85 A	2.1 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	7 Ohm @ 1A, 10V	6 Ohm @ 1.25A, 10V	8.5 Ohm @ 900mA, 10V	6.5 Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id	4.5 V @ 250µA	4.5 V @ 50µA	4.5 V @ 50µA	4.5 V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10V	18 nC @ 10V	16 nC @ 10V	27 nC @ 10V
Vgs (Max)	±20 V	±30 V	±30 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	825 pF @ 25V	601 pF @ 25V	499 pF @ 25V	485 pF @ 25V
Power Dissipation (Max)	100 W	25 W	70 W	70 W
Operating Temperature	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole TO-220-3	Through Hole TO-220FP	Through Hole TO-220	Through Hole TO-220
Package / Case	TO-220-3	TO-220-3 Full Pack	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

STF3NK100Z (STMicroelectronics): This substitute provides 1000V Vdss matching and exceeds the 2A continuous drain current requirement at 2.5A. The device features lower on-resistance (6 Ohm) and reduced gate charge (18 nC), resulting in improved switching efficiency. Power dissipation rating of 25W is lower than the IXTP2N100; thermal design verification is required for applications approaching 100W dissipation. All compliance certifications (RoHS3, REACH unaffected) are equivalent. TO-220FP package maintains through-hole compatibility.

STP2NK100Z (STMicroelectronics): This substitute maintains 1000V Vdss specification with 1.85A continuous drain current, slightly below the IXTP2N100 rating. On-resistance of 8.5 Ohm is marginally higher. Power dissipation capability of 70W supports most applications within the IXTP2N100 thermal envelope. Gate charge of 16 nC provides improved switching performance. All compliance certifications match. TO-220 package is directly compatible.

STP2NK90Z (STMicroelectronics): This substitute operates at 900V Vdss, 100V below the IXTP2N100 specification. Continuous drain current of 2.1A exceeds the 2A requirement. On-resistance of 6.5 Ohm provides improved performance. Power dissipation of 70W is suitable for thermal requirements. Gate charge of 27 nC is higher than the IXTP2N100. This device is applicable only in applications where 900V Vdss is sufficient. All compliance certifications are equivalent. TO-220 package is directly compatible.

All substitute parts are Active status with RoHS3 compliance and REACH unaffected designation, ensuring regulatory alignment with the IXTP2N100.

Frequently Asked Questions (FAQ)

Q: Can the STF3NK100Z directly replace the IXTP2N100 in all applications?

A: The STF3NK100Z meets the 1000V voltage and 2A current requirements with improved on-resistance and gate charge characteristics. However, the power dissipation rating of 25W is significantly lower than the IXTP2N100 rating of 100W. Applications requiring sustained power dissipation above 25W require thermal analysis to confirm the substitute is suitable for the specific thermal environment.

Q: What is the key difference between the STP2NK100Z and STP2NK90Z?

A: The primary difference is drain-to-source voltage: STP2NK100Z is rated for 1000V while STP2NK90Z is rated for 900V. The STP2NK100Z maintains full voltage compatibility with the IXTP2N100. The STP2NK90Z is suitable only for applications where the maximum operating voltage does not exceed 900V. Both devices share equivalent continuous drain current capability and power dissipation ratings.

Q: Are all substitute parts compatible with TO-220 PCB footprints?

A: Yes. The IXTP2N100, STF3NK100Z, STP2NK100Z, and STP2NK90Z all use TO-220 package family configurations (TO-220-3, TO-220FP, TO-220). These packages share identical pin spacing and through-hole mounting dimensions, ensuring direct PCB footprint compatibility.

Q: Which substitute part offers the lowest on-resistance?

A: Both the STF3NK100Z and STP2NK90Z provide 6 Ohm on-resistance, lower than the IXTP2N100 specification of 7 Ohm. The STP2NK100Z has 8.5 Ohm on-resistance. Lower on-resistance reduces conduction losses and heat generation during operation.

Q: Do all substitute parts operate across the same temperature range as the IXTP2N100?

A: Yes. The IXTP2N100, STF3NK100Z, STP2NK100Z, and STP2NK90Z all operate across the -55°C to 150°C junction temperature range, ensuring thermal compatibility across the full operating envelope.

Q: What compliance certifications apply to all parts in this substitution group?

A: All parts (IXTP2N100, STF3NK100Z, STP2NK100Z, and STP2NK90Z) are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (Unlimited) for all devices. ECCN classification is EAR99 for all parts.

Q: Is gate charge an important factor when selecting a substitute?

A: Gate charge affects switching speed and driver circuit requirements. The IXTP2N100 has 40 nC gate charge. Substitute parts have lower gate charge values (STF3NK100Z: 18 nC, STP2NK100Z: 16 nC, STP2NK90Z: 27 nC), which can reduce switching losses and improve high-frequency performance. Driver circuits designed for the IXTP2N100 will operate with improved efficiency using lower gate charge substitutes.

Q: Can the STP2NK90Z be used in a 1000V application?

A: No. The STP2NK90Z is rated for maximum 900V drain-to-source voltage. Using this device in applications requiring 1000V operation exceeds the device rating and creates reliability risk. The STP2NK100Z or STF3NK100Z must be used for 1000V applications.

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