IXTP28P065T P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP28P065T is an active P-Channel MOSFET manufactured by IXYS, rated for 65V drain-to-source voltage with 28A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the TrenchP™ series. The part is ROHS3 compliant and carries REACH Unaffected status.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution necessity arises from inventory availability, lead time constraints, or design flexibility requirements while maintaining functional equivalence within specified parameter tolerances.

Substiute Parts

IXTP28P065T

IXYSIn Stock: 1054IXTP28P065T Datasheet

Current PartRFQ

FQP27P06

onsemiIn Stock: 54342FQP27P06 Datasheet

SimilarRFQ

STP36NF06L

STMicroelectronicsIn Stock: 1344STP36NF06L Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the IXTP28P065T is based on the following critical parameters:

Channel Type: P-Channel operation is mandatory for direct substitution. N-Channel devices operate with inverted gate logic and cannot replace P-Channel MOSFETs in existing circuit designs.

Voltage Rating (Vdss): The 65V rating establishes the maximum drain-to-source voltage the device can withstand. Substitute parts must meet or exceed this specification to ensure safe operation under maximum voltage conditions.

Current Rating (Id): The 28A continuous drain current at 25°C defines the thermal and electrical load capacity. Substitute parts must support equivalent or higher current ratings to maintain design margins.

On-State Resistance (Rds On): The 45mOhm specification at 14A, 10V determines power dissipation and thermal performance. Lower Rds On values improve efficiency; higher values increase heat generation.

Package and Mounting: TO-220-3 through-hole configuration ensures mechanical and thermal interface compatibility with existing PCB layouts and heatsinking arrangements.

Compliance Status: ROHS3 compliance and REACH Unaffected status are required for regulatory and supply chain continuity.

Parameter Comparison

Engineering Selection Recommendations

FQP27P06 (onsemi): This P-Channel MOSFET maintains channel type equivalence with the IXTP28P065T. The 60V Vdss rating is 5V lower than the main part, requiring circuit voltage verification to confirm operation within safe margins. The 27A continuous drain current is 1A lower, establishing a 3.6% reduction in current capacity. The 70mOhm Rds On is higher than the main part, resulting in increased power dissipation. The FQP27P06 operates to 175°C junction temperature, exceeding the main part's 150°C maximum. ROHS3 compliance and REACH Unaffected status are maintained. This substitute is suitable for applications where the 60V voltage rating and higher on-state resistance are acceptable within design specifications.

STP36NF06L (STMicroelectronics): This device is an N-Channel MOSFET and operates with inverted gate logic relative to the P-Channel IXTP28P065T. Direct substitution in existing P-Channel circuit designs is not possible without circuit topology modification. The N-Channel architecture requires gate drive signal inversion and different biasing conditions. This part is listed in the provided substitute list but does not meet the channel type requirement for direct replacement. ROHS3 compliance and REACH Unaffected status are present.

Recommended Selection Path: For direct functional replacement requiring no circuit redesign, the FQP27P06 is the appropriate substitute when the 60V voltage rating and 27A current capacity satisfy application requirements. The STP36NF06L requires circuit-level design changes and is not recommended for direct substitution applications.

Frequently Asked Questions (FAQ)

Q: Can the FQP27P06 replace the IXTP28P065T in all applications?

A: The FQP27P06 is a P-Channel substitute with compatible package and mounting. However, the 60V Vdss rating is 5V lower than the IXTP28P065T. Substitution is valid only when the circuit maximum voltage does not exceed 60V. The 27A current rating is 1A lower, and the 70mOhm Rds On is higher, increasing power dissipation. Verify these parameters against your circuit requirements before substitution.

Q: Why is the STP36NF06L listed as a substitute if it is N-Channel?

A: The STP36NF06L is provided in the substitute list but is not a direct replacement. N-Channel and P-Channel MOSFETs operate with opposite gate logic and require different circuit configurations. This part cannot be substituted without redesigning the gate drive and biasing circuits. It is included for reference only.

Q: What is the significance of the TO-220-3 package for substitution?

A: The TO-220-3 package ensures mechanical and thermal compatibility. All listed parts use this package, allowing physical mounting on existing PCB layouts and heatsinks without modification. Package compatibility is a prerequisite for direct substitution.

Q: Does the FQP27P06 meet compliance requirements?

A: Yes. The FQP27P06 is ROHS3 compliant and REACH Unaffected, matching the compliance status of the IXTP28P065T. Regulatory requirements are maintained with this substitute.

Q: How does the higher operating temperature range of the FQP27P06 affect substitution?

A: The FQP27P06 operates to 175°C junction temperature, compared to the IXTP28P065T at 150°C. This extended range provides additional thermal margin and does not restrict substitution. The higher temperature capability is a design advantage.

Q: What is the impact of the 70mOhm Rds On in the FQP27P06 compared to the 45mOhm in the IXTP28P065T?

A: Higher on-state resistance increases power dissipation. At equivalent current levels, the FQP27P06 dissipates more heat. Thermal design verification is necessary to confirm that heatsinking capacity accommodates the increased dissipation. The FQP27P06 maximum power rating of 120W exceeds the IXTP28P065T at 83W, providing additional dissipation capacity.