IXTP26P20P MOSFET P-Channel 200V 26A Equivalent & Substitute Parts

Part Overview

The IXTP26P20P is an active P-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 26A continuous drain current. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-power switching applications requiring robust thermal management and reliable performance across industrial temperature ranges.

Substitute parts are identified when electrical parameters, thermal ratings, and functional specifications remain identical while packaging or mechanical form factors differ. This allows design flexibility for PCB layout optimization, thermal management strategies, or component availability considerations.

Substiute Parts

IXTP26P20P
IXYSIn Stock: 2275IXTP26P20P Datasheet
IXTP26P20P
Current Part
IXTH26P20P
IXYSIn Stock: 2303IXTH26P20P Datasheet
IXTH26P20P
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 26 A (Tc)
Rds On (Max) @ Id, Vgs 170 mOhm @ 13A, 10V
Power Dissipation (Max) 300 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2740 pF @ 25V
Vgs (Max) ±20 V
Technology MOSFET (Metal Oxide)
Series PolarP™
Product Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the IXTP26P20P are identified based on electrical and thermal parameter equivalence. The substitution logic is governed by the following criteria:

Electrical Parameter Equivalence:

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 26A @ 25°C
  • On-State Resistance (Rds On): 170 mOhm @ 13A, 10V
  • Gate Charge (Qg): 56 nC @ 10V
  • Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Input Capacitance (Ciss): 2740 pF @ 25V
  • Maximum Gate Voltage (Vgs): ±20V

Thermal and Mechanical Equivalence:

  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Technology: MOSFET (Metal Oxide)
  • Series: PolarP™
  • Manufacturer: IXYS
  • Product Status: Active

Allowable Variation:

  • Package/Case form factor (TO-220-3 versus TO-247-3)
  • Mounting type remains through-hole in all cases

Parts meeting all electrical, thermal, and compliance criteria are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Parameter IXTP26P20P (TO-220-3) IXTH26P20P (TO-247-3) Unit
Manufacturer IXYS IXYS
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 200 200 V
Current - Continuous Drain (Id) @ 25°C 26 26 A (Tc)
Rds On (Max) @ Id, Vgs 170 @ 13A, 10V 170 @ 13A, 10V mOhm
Power Dissipation (Max) 300 300 W (Tc)
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Gate Charge (Qg) (Max) @ Vgs 56 @ 10V 56 @ 10V nC
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Input Capacitance (Ciss) (Max) @ Vds 2740 @ 25V 2740 @ 25V pF
Vgs (Max) ±20 ±20 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series PolarP™ PolarP™
Product Status Active Active
Package / Case TO-220-3 TO-247-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Both the IXTP26P20P and IXTH26P20P are active products manufactured by IXYS with identical electrical and thermal specifications. Selection between these parts is determined by packaging and mechanical requirements rather than functional performance.

IXTP26P20P (TO-220-3):

  • Standard through-hole package with three leads
  • Suitable for applications with standard PCB footprint requirements
  • Established thermal management through standard heatsink interfaces

IXTH26P20P (TO-247-3):

  • Enhanced through-hole package with three leads
  • Provides alternative mechanical form factor for specific PCB layout constraints
  • Maintains identical electrical performance and thermal rating

Both parts comply with ROHS3 standards, carry MSL Level 1 (Unlimited) moisture sensitivity classification, and are REACH Unaffected. Both are suitable for direct substitution in applications where the specified electrical parameters and thermal requirements are met.

Frequently Asked Questions (FAQ)

Q: Are IXTP26P20P and IXTH26P20P electrically identical?

A: Yes. Both devices share identical electrical specifications including Vdss (200V), Id (26A), Rds On (170 mOhm), gate charge (56 nC), and thermal rating (300W). The difference is packaging only.

Q: What is the primary difference between these two parts?

A: The IXTP26P20P uses a TO-220-3 package, while the IXTH26P20P uses a TO-247-3 package. Both are through-hole configurations with three leads. The TO-247 package offers a different mechanical footprint and may provide different thermal coupling characteristics depending on heatsink design.

Q: Can I substitute IXTH26P20P for IXTP26P20P in an existing design?

A: Electrical substitution is valid. However, PCB footprint and heatsink mounting interfaces differ between TO-220-3 and TO-247-3 packages. Physical layout modifications are required.

Q: Do both parts have the same compliance certifications?

A: Yes. Both parts are ROHS3 Compliant, carry MSL Level 1 (Unlimited), and are REACH Unaffected.

Q: What is the operating temperature range for both devices?

A: Both the IXTP26P20P and IXTH26P20P operate across -55°C to 175°C (TJ).

Q: Are there any differences in gate charge or input capacitance?

A: No. Both parts have identical gate charge (56 nC @ 10V) and input capacitance (2740 pF @ 25V).

Q: Which package should I select for new designs?

A: Selection depends on PCB layout requirements, heatsink availability, and thermal management strategy. Both packages deliver identical electrical performance and thermal dissipation capability (300W).

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