IXTP240N055T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP240N055T is an N-Channel MOSFET manufactured by IXYS, rated for 55V drain-to-source voltage and 240A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 175°C and delivers 480W maximum power dissipation at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	240	A
On-State Resistance (Rds On) @ 25A, 10V	3.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	170	nC
Input Capacitance (Ciss) @ 25V	7600	pF
Power Dissipation (Max)	480	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXTP240N055T is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 240A to maintain current-handling capability
Package Type: TO-220-3 through-hole configuration for mechanical and thermal compatibility
Operating Temperature Range: Must support -55°C to 175°C minimum
On-State Resistance (Rds On): Lower values indicate improved performance; values within 10% of original are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values within 20% are acceptable

Substitution Categories:

Category 1 – Direct Upgrade (Same Voltage, Higher Current): Parts with 55V Vdss and current ratings ≥240A represent direct upgrades with improved current capacity and reduced on-state resistance.

Category 2 – Voltage-Elevated Substitutes (Higher Voltage, Reduced Current): Parts with Vdss >55V and Id <240A operate at higher voltage margins but with reduced current capacity. These are suitable only when application current requirements are lower than the original 240A specification.

Category 3 – Partial Substitutes (Voltage Match, Significantly Lower Current): Parts with matching 55V Vdss but substantially lower current ratings (≤120A) are limited to applications with reduced current demands.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Dissipation (W)	Temp Range (°C)	Package	Status
IXTP240N055T	IXYS	55	240	3.6 @ 25A	170 @ 10V	7600 @ 25V	480	-55 to 175	TO-220-3	Obsolete
IXTP260N055T2	IXYS	55	260	3.3 @ 50A	140 @ 10V	10800 @ 25V	480	-55 to 175	TO-220-3	Active
IRFB3206PBF	Infineon	60	120	3.0 @ 75A	170 @ 10V	6540 @ 50V	300	-55 to 175	TO-220-3	Active
STP185N55F3	STMicroelectronics	55	120	3.8 @ 60A	100 @ 10V	6800 @ 25V	330	-55 to 175	TO-220-3	Active
STP190N55LF3	STMicroelectronics	55	120	3.7 @ 30A	80 @ 5V	6200 @ 25V	312	-55 to 175	TO-220-3	Active
DMT6004SCT	Diodes Incorporated	60	100	3.65 @ 100A	95.4 @ 10V	4556 @ 30V	113 (Tc)	-55 to 150	TO-220-3	Active
DMTH6004SCT	Diodes Incorporated	60	100	3.65 @ 100A	95.4 @ 10V	4556 @ 30V	136 (Tc)	-55 to 175	TO-220-3	Active

Engineering Selection Recommendations

IXTP260N055T2 (IXYS) – Primary Recommendation

The IXTP260N055T2 is the optimal substitute for the IXTP240N055T. Both devices share identical voltage ratings (55V Vdss), matching package configuration (TO-220-3), and identical operating temperature range (-55°C to 175°C). The IXTP260N055T2 provides 260A continuous drain current, exceeding the original 240A specification. On-state resistance is improved at 3.3mOhm compared to 3.6mOhm, and gate charge is reduced to 140nC from 170nC, resulting in lower switching losses. The part is manufactured by IXYS using the same TrenchT2™ technology series and carries Active product status with RoHS3 compliance. Inventory availability is 32,800 units.

IRFB3206PBF (Infineon Technologies) – Secondary Recommendation

The IRFB3206PBF operates at 60V Vdss, providing 5V additional voltage margin over the original 55V specification. Continuous drain current is rated at 120A, representing a 50% reduction from the IXTP240N055T. This device is suitable only for applications where actual current requirements do not exceed 120A. The part features improved on-state resistance of 3.0mOhm and maintains identical gate charge of 170nC. Operating temperature range matches the original at -55°C to 175°C. The HEXFET® series device carries Active status and RoHS3 compliance with 35,200 units in inventory.

STP185N55F3 and STP190N55LF3 (STMicroelectronics) – Limited Substitutes

Both STMicroelectronics devices maintain the 55V Vdss rating and TO-220-3 package configuration. However, both are rated for only 120A continuous drain current, representing a 50% reduction from the original 240A specification. These parts are suitable only for applications with reduced current demands. STP185N55F3 provides 330W power dissipation with 100nC gate charge. STP190N55LF3 offers 312W power dissipation with 80nC gate charge and supports dual drive voltages (5V and 10V). Both maintain -55°C to 175°C operating range and carry Active status with RoHS3 compliance.

DMT6004SCT and DMTH6004SCT (Diodes Incorporated) – Not Recommended

Both Diodes Incorporated devices operate at 60V Vdss with only 100A continuous drain current, representing a 58% reduction from the original 240A specification. Power dissipation is significantly reduced to 113W (DMT6004SCT) and 136W (DMTH6004SCT). DMT6004SCT operates to 150°C maximum, below the original 175°C specification. DMTH6004SCT extends to 175°C but does not compensate for the substantial current reduction. These devices are unsuitable for applications requiring the original 240A current capacity.

Frequently Asked Questions (FAQ)

Q: Can the IXTP260N055T2 directly replace the IXTP240N055T without circuit modifications?

A: Yes. The IXTP260N055T2 is a direct replacement. Both devices share identical voltage ratings (55V), package configuration (TO-220-3), operating temperature range (-55°C to 175°C), and gate threshold voltage (4V @ 250µA). The IXTP260N055T2 provides higher current capacity (260A vs. 240A) and improved on-state resistance (3.3mOhm vs. 3.6mOhm), making it a superior substitute with no circuit modifications required.

Q: Why do some substitute parts have lower current ratings than the original IXTP240N055T?

A: Substitute parts with lower current ratings (such as the 120A-rated STMicroelectronics devices or 100A-rated Diodes Incorporated devices) represent compromises between voltage rating, package availability, and manufacturing technology. These parts are suitable only for applications where actual circuit current requirements are lower than the original 240A specification. Selection must be based on actual application current demands, not the original part's maximum rating.

Q: What is the significance of the voltage rating difference between 55V and 60V devices?

A: The 55V Vdss rating of the original IXTP240N055T is the maximum drain-to-source voltage the device can withstand. Substitute devices rated at 60V Vdss provide an additional 5V safety margin, allowing operation in circuits with slightly higher voltage transients. However, 60V-rated devices do not provide improved performance at 55V operation; they simply offer greater voltage headroom. Selection between 55V and 60V devices depends on circuit voltage requirements and transient margin specifications.

Q: Are all substitute parts RoHS3 compliant?

A: The IXTP260N055T2, IRFB3206PBF, STP185N55F3, STP190N55LF3, DMT6004SCT, and DMTH6004SCT all carry RoHS3 compliance certification. The original IXTP240N055T does not specify RoHS status. All substitute parts listed are REACH Unaffected and carry EAR99 export classification.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IXTP260N055T2 features reduced gate charge (140nC vs. 170nC), resulting in lower switching losses compared to the original. STMicroelectronics devices offer even lower gate charge (80-100nC), providing superior switching performance but with reduced current capacity.

Q: Can the IRFB3206PBF be used in applications requiring 240A continuous current?

A: No. The IRFB3206PBF is rated for only 120A continuous drain current. Using this device in a 240A application would exceed its current rating and result in device failure. The IRFB3206PBF is suitable only for applications where actual continuous current requirements do not exceed 120A.

Q: What is the difference between DMT6004SCT and DMTH6004SCT?

A: Both devices share identical electrical specifications (60V Vdss, 100A Id, 3.65mOhm Rds On). The primary differences are maximum operating temperature and power dissipation. DMT6004SCT operates to 150°C maximum with 113W power dissipation at case temperature. DMTH6004SCT extends to 175°C maximum with 136W power dissipation at case temperature. DMTH6004SCT is preferred for applications requiring the full -55°C to 175°C temperature range.

Q: Is the TO-220-3 package identical across all substitute parts?

A: All substitute parts listed use the TO-220-3 through-hole package configuration, ensuring mechanical compatibility with the original IXTP240N055T. However, minor variations in lead spacing or thermal characteristics may exist between manufacturers. Physical verification is recommended before final assembly integration.

Q: What inventory considerations apply to substitute part selection?

A: The IXTP260N055T2 offers the highest inventory availability at 32,800 units, followed by IRFB3206PBF at 35,200 units. STP185N55F3 provides 21,400 units, while STP190N55LF3 offers only 2,196 units. DMT6004SCT and DMTH6004SCT provide 2,460 and 967 units respectively. Inventory levels should be considered in long-term supply chain planning.

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