IXTP230N075T2 Equivalent & Substitute Parts

Part Overview

The IXTP230N075T2 is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 230A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the TrenchT2™ series. The part is currently active and in production with 10,100 units in stock.

Substitute parts are identified when design requirements necessitate alternative packaging formats, different thermal characteristics, or when primary part availability is constrained. Equivalent parts maintain the same electrical performance specifications, while similar parts provide comparable functionality within defined parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	230	A
On-State Resistance (Rds On) @ 50A, 10V	4.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	178	nC
Power Dissipation (Max)	480	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTP230N075T2 is determined by the following critical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 75V minimum
Continuous Drain Current (Id): 230A minimum at 25°C
On-State Resistance (Rds On): 4.2mOhm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): 4V maximum
Operating Temperature Range: -55°C to 175°C minimum

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package Category: TO-220 family variants (TO-220-3, TO-220AB, TO-247-3)

Compliance Requirements:

RoHS3 Compliant
REACH Unaffected
Active product status

Parts are grouped into two categories:

Parametric Equivalent: Parts that maintain identical electrical specifications and differ only in package format (TO-247AD vs. TO-220-3).

Similar Parts: Parts that meet the core voltage and current requirements but may have reduced current ratings, lower power dissipation, or different gate charge characteristics. These parts are suitable for applications where the full 230A rating is not required or where thermal management allows for lower power dissipation.

Parameter Comparison

Parameter	IXTP230N075T2	IXFH230N075T2	CSD18532KCS	IRFB3207ZPBF	IRFB3306PBF
Manufacturer	IXYS	IXYS	Texas Instruments	Infineon Technologies	Infineon Technologies
Vdss (V)	75	75	60	75	60
Id @ 25°C (A)	230	230	100	120	120
Rds On @ 10V (mOhm)	4.2 @ 50A	4.2 @ 50A	4.2 @ 100A	4.1 @ 75A	4.2 @ 75A
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	2.2 @ 250µA	4 @ 150µA	4 @ 150µA
Gate Charge Qg @ 10V (nC)	178	178	53	170	120
Power Dissipation (W)	480	480	250	300	230
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-247-3	TO-220-3	TO-220AB	TO-220AB
Series	TrenchT2™	HiPerFET™, TrenchT2™	NexFET™	HEXFET®	HEXFET®
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes
REACH Unaffected	Yes	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

IXFH230N075T2 (Parametric Equivalent)

The IXFH230N075T2 is a direct parametric equivalent to the IXTP230N075T2, maintaining identical electrical specifications including 75V Vdss, 230A continuous drain current, 4.2mOhm Rds On, and 480W power dissipation. The primary difference is the package format: TO-247AD versus TO-220-3. Both devices are manufactured by IXYS, share the same TrenchT2™ technology platform, and carry identical compliance certifications (RoHS3 Compliant, REACH Unaffected). Selection between these two parts depends on PCB layout requirements and thermal management strategy. The TO-247 package provides superior thermal performance through increased lead surface area and is preferred for high-current applications. The TO-220 package offers standard through-hole compatibility with existing designs.

CSD18532KCS (Similar Part)

The CSD18532KCS from Texas Instruments is a similar part suitable for applications where the full 230A rating of the IXTP230N075T2 is not required. This device operates at 60V Vdss (15V lower than the main part) and provides 100A continuous drain current (130A lower than the main part). The on-state resistance is equivalent at 4.2mOhm, but power dissipation is reduced to 250W. The CSD18532KCS features lower gate charge (53nC versus 178nC), resulting in faster switching characteristics. This part is suitable for lower-current applications or designs with reduced thermal budgets. All compliance requirements are met.

IRFB3207ZPBF (Similar Part)

The IRFB3207ZPBF from Infineon Technologies maintains the 75V Vdss rating of the main part but provides 120A continuous drain current (110A lower than the IXTP230N075T2). The on-state resistance is comparable at 4.1mOhm, with power dissipation rated at 300W. Gate charge is 170nC, slightly lower than the main part. This device is suitable for applications requiring 75V operation but with reduced current handling. All compliance certifications are met.

IRFB3306PBF (Similar Part)

The IRFB3306PBF from Infineon Technologies operates at 60V Vdss and provides 120A continuous drain current. The on-state resistance is 4.2mOhm at 75A, with power dissipation of 230W. Gate charge is 120nC, providing faster switching than the main part. This part is appropriate for 60V applications with moderate current requirements. All compliance requirements are satisfied.

Frequently Asked Questions (FAQ)

Q: Can the IXFH230N075T2 be used as a direct replacement for the IXTP230N075T2?

A: Yes, the IXFH230N075T2 is a parametric equivalent with identical electrical specifications. The only difference is the package format (TO-247AD versus TO-220-3). PCB layout and thermal management considerations determine suitability. Both parts are manufactured by IXYS and share the same technology platform.

Q: What is the primary difference between the IXTP230N075T2 and the CSD18532KCS?

A: The IXTP230N075T2 is rated for 230A continuous drain current at 75V, while the CSD18532KCS is rated for 100A at 60V. The CSD18532KCS has lower power dissipation (250W versus 480W) and lower gate charge (53nC versus 178nC). The CSD18532KCS is suitable for applications not requiring the full current rating of the main part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (IXFH230N075T2, CSD18532KCS, IRFB3207ZPBF, and IRFB3306PBF) are RoHS3 compliant and REACH unaffected, matching the compliance status of the IXTP230N075T2.

Q: What is the difference between TO-220-3 and TO-247-3 packages?

A: Both are through-hole packages for power MOSFETs. The TO-247-3 package has larger lead dimensions and increased surface area, providing superior thermal performance. The TO-220-3 is the standard package with more compact dimensions. Electrical performance is identical; package selection depends on thermal requirements and PCB layout constraints.

Q: Can the IRFB3207ZPBF replace the IXTP230N075T2 in a 230A application?

A: No. The IRFB3207ZPBF is rated for 120A continuous drain current, which is insufficient for applications requiring the full 230A capability of the IXTP230N075T2. The IRFB3207ZPBF is suitable only for applications requiring 120A or less at 75V.

Q: Which substitute part has the lowest gate charge?

A: The CSD18532KCS has the lowest gate charge at 53nC at 10V, compared to 178nC for the IXTP230N075T2. Lower gate charge results in faster switching transitions and reduced gate drive power requirements.

Q: Are all parts available in tube packaging?

A: Yes, all parts listed (IXTP230N075T2, IXFH230N075T2, CSD18532KCS, IRFB3207ZPBF, and IRFB3306PBF) are supplied in tube packaging.

Q: What is the operating temperature range for all substitute parts?

A: All parts operate across the temperature range of -55°C to 175°C (junction temperature), matching the IXTP230N075T2.

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