IXTP220N075T Equivalent & Substitute Parts

Part Overview

The IXTP220N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 220A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the TrenchMV™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across voltage rating, current capacity, thermal characteristics, and package type to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	IXTP220N075T	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	75	V
Current - Continuous Drain (Id) @ 25°C	220	A (Tc)
Rds On (Max) @ Id, Vgs	4.5	mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs	165	nC @ 10V
Power Dissipation (Max)	480	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXTP220N075T is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-to-source voltage must be equal to or greater than 75V to maintain circuit protection margins. Parts rated below 75V are not suitable for direct substitution.

Current Capacity (Id @ 25°C): The continuous drain current must meet or exceed 220A at 25°C to ensure the substitute can handle the same load conditions. Parts with lower current ratings represent a functional downgrade.

Package Type: The TO-220-3 through-hole package is mandatory for mechanical and thermal compatibility with existing PCB layouts and heatsink mounting configurations.

Operating Temperature Range: The -55°C to 175°C range must be maintained to ensure operation across the full design temperature envelope.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation, making them acceptable substitutes. Higher values may increase thermal stress.

Substitute parts are grouped into two categories: Direct Equivalents (matching or exceeding all primary parameters) and Functional Alternatives (meeting voltage and package requirements with acceptable current and thermal trade-offs).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IXTP220N075T	IXYS	75	220	4.5 @ 25A, 10V	165 @ 10V	480	TO-220-3	Obsolete
IXTP230N075T2	IXYS	75	230	4.2 @ 50A, 10V	178 @ 10V	480	TO-220-3	Active
IRFB3207PBF	Infineon	75	170	4.5 @ 75A, 10V	260 @ 10V	330	TO-220-3	Active
IRFB3207ZPBF	Infineon	75	120	4.1 @ 75A, 10V	170 @ 10V	300	TO-220-3	Active
CSD18532KCS	Texas Instruments	60	100	4.2 @ 100A, 10V	53 @ 10V	250	TO-220-3	Active
FDP038AN06A0	onsemi	60	80	3.8 @ 80A, 10V	124 @ 10V	310	TO-220-3	Active
IPP100N06S205AKSA1	Infineon	55	100	5.0 @ 80A, 10V	170 @ 10V	300	TO-220-3	Discontinued
IPP80N07S405AKSA1	Infineon	—	80	—	—	—	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute: IXTP230N075T2

The IXTP230N075T2 is the recommended primary substitute for the IXTP220N075T. Both devices are manufactured by IXYS and share identical voltage ratings (75V) and package configuration (TO-220-3). The IXTP230N075T2 provides 230A continuous drain current, exceeding the original 220A specification. On-state resistance is improved at 4.2 mOhm compared to 4.5 mOhm, resulting in lower power dissipation. The part is currently active in production with high inventory availability (10,100 units). RoHS3 compliance and REACH unaffected status are confirmed.

Secondary Substitutes: IRFB3207PBF and IRFB3207ZPBF

Both Infineon HEXFET® devices maintain the 75V voltage rating and TO-220-3 package. The IRFB3207PBF provides 170A continuous current with 330W power dissipation, suitable for applications where current demand is below 220A. The IRFB3207ZPBF is rated for 120A continuous current and represents a further downgrade in current capacity. Both parts are active with substantial inventory (35,300 and 20,100 units respectively) and carry RoHS3 compliance.

Lower Voltage Alternatives: CSD18532KCS, FDP038AN06A0, IPP100N06S205AKSA1

These parts operate at reduced voltage ratings (60V or 55V) and are suitable only for applications where the circuit design permits lower voltage operation. The CSD18532KCS (Texas Instruments NexFET™, 60V, 100A) and FDP038AN06A0 (onsemi PowerTrench®, 60V, 80A) are both active products with good availability. The IPP100N06S205AKSA1 (Infineon OptiMOS™, 55V, 100A) is discontinued at DiGi Electronics and should not be selected for new designs.

Not Recommended: IPP80N07S405AKSA1

Insufficient technical data is provided for this Infineon part. Complete electrical specifications are not available in the reference material, preventing proper engineering evaluation.

Frequently Asked Questions (FAQ)

Q: Can the IXTP230N075T2 be used as a direct replacement for the IXTP220N075T?

A: Yes. The IXTP230N075T2 is a direct substitute. Both parts share the same 75V voltage rating, TO-220-3 package, and -55°C to 175°C operating temperature range. The IXTP230N075T2 provides higher current capacity (230A vs. 220A) and improved on-state resistance (4.2 mOhm vs. 4.5 mOhm), making it functionally superior. The part is active in production with confirmed RoHS3 compliance.

Q: Why are the CSD18532KCS and FDP038AN06A0 listed as substitutes if they have lower voltage ratings?

A: These parts are listed as functional alternatives for applications where circuit design permits operation at 60V or lower. They are not direct replacements for the IXTP220N075T in designs requiring 75V protection. Use of lower-voltage parts in 75V-rated circuits creates risk of device failure and is not recommended.

Q: What is the significance of the TO-220-3 package requirement?

A: The TO-220-3 package is a three-terminal through-hole configuration with standardized pin spacing and heatsink mounting interface. All listed substitutes maintain this package type, ensuring mechanical compatibility with existing PCB layouts, heatsink assemblies, and thermal management solutions. Package changes require PCB redesign and are outside the scope of component substitution.

Q: How does on-state resistance (Rds On) affect substitute selection?

A: Lower Rds On values reduce power dissipation and improve efficiency. The IXTP230N075T2 (4.2 mOhm) and IRFB3207ZPBF (4.1 mOhm) both offer improved Rds On compared to the original part (4.5 mOhm). Higher Rds On values increase thermal stress and may require enhanced heatsinking. Rds On is measured at specific current and gate voltage conditions and must be compared at equivalent test points.

Q: Is the IRFB3207PBF suitable for applications requiring 220A continuous current?

A: No. The IRFB3207PBF is rated for 170A continuous drain current at 25°C, which is 50A below the IXTP220N075T specification. This part is suitable only for applications with current demands at or below 170A. Use in higher-current applications will result in thermal stress and potential device failure.

Q: What compliance certifications should be verified for substitute parts?

A: All recommended active substitutes carry RoHS3 compliance and REACH unaffected status, matching the original part's regulatory standing. The IXTP230N075T2 is confirmed RoHS3 compliant. The Infineon HEXFET® parts (IRFB3207PBF, IRFB3207ZPBF) and Texas Instruments NexFET™ (CSD18532KCS) are all RoHS3 compliant. The onsemi PowerTrench® part (FDP038AN06A0) is also RoHS3 compliant. Verify compliance documentation with your supplier before final part selection.

Q: Why is the IPP100N06S205AKSA1 not recommended despite meeting some electrical requirements?

A: The IPP100N06S205AKSA1 is discontinued at DiGi Electronics and carries a lower voltage rating (55V vs. 75V). Discontinued parts present supply chain risk and should not be selected for new designs or long-term production. The 55V rating also makes it unsuitable for 75V-rated circuit applications.

Q: Can gate charge (Qg) differences between substitutes affect circuit performance?

A: Yes. Gate charge affects gate drive circuit design and switching speed. The IXTP220N075T specifies 165 nC at 10V. The IXTP230N075T2 (178 nC) and IRFB3207PBF (260 nC) have higher gate charge, requiring more drive current from the gate driver. The IRFB3207ZPBF (170 nC) and CSD18532KCS (53 nC) represent lower and significantly lower gate charge respectively. Verify that existing gate drive circuits can supply adequate current for the selected substitute.

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