IXTP200N075T N-Channel 75V 200A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP200N075T is an N-Channel MOSFET manufactured by IXYS in the TrenchMV™ series, rated for 75V drain-to-source voltage and 200A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 430W. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	200	A (Tc)
On-Resistance (Rds On) @ 25A, 10V	5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	160	nC
Input Capacitance (Ciss) @ 25V	6800	pF
Power Dissipation (Max)	430	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTP200N075T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 200A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 175°C
Gate Drive Voltage: Must be compatible with 10V drive specification

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into two categories:

Category A - Direct Voltage/Current Equivalents (75V, ≥200A): Parts meeting or exceeding the 75V/200A specification with compatible TO-220-3 packaging.

Category B - Reduced Current Alternatives (75V, <200A) or Reduced Voltage Alternatives (<75V): Parts with lower current or voltage ratings suitable for applications with reduced performance requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXTP200N075T	IXYS	75	200	5.0 @ 25A	160 @ 10V	6800 @ 25V	430	TO-220-3	Obsolete
IXTP230N075T2	IXYS	75	230	4.2 @ 50A	178 @ 10V	10500 @ 25V	480	TO-220-3	Active
IRFB3207PBF	Infineon	75	170	4.5 @ 75A	260 @ 10V	7600 @ 50V	330	TO-220-3	Active
IRFB3207ZPBF	Infineon	75	120	4.1 @ 75A	170 @ 10V	6920 @ 50V	300	TO-220-3	Active
CSD18532KCS	Texas Instruments	60	100	4.2 @ 100A	53 @ 10V	4680 @ 30V	250	TO-220-3	Active
FDP050AN06A0	onsemi	60	80	5.0 @ 80A	80 @ 10V	3900 @ 25V	245	TO-220-3	Active
IRFB3306PBF	Infineon	60	120	4.2 @ 75A	120 @ 10V	4520 @ 50V	230	TO-220-3	Active
PSMN3R9-60PSQ	Nexperia	60	130	3.9 @ 25A	103 @ 10V	5600 @ 25V	263	TO-220-3	Obsolete
IPP80N07S405AKSA1	Infineon	70	80	Not Specified	Not Specified	Not Specified	Not Specified	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute - Direct Replacement:

The IXTP230N075T2 (IXYS, Active) is the primary substitute for the IXTP200N075T. This part exceeds the original specification with 230A continuous drain current at the same 75V rating, providing enhanced current capacity. The device maintains TO-220-3 through-hole packaging and operates across the identical temperature range (-55°C to 175°C). The IXTP230N075T2 is ROHS3 compliant and carries Active product status, ensuring long-term availability and design support.

Secondary Substitutes - 75V Voltage Class:

The IRFB3207PBF (Infineon, Active) provides 170A continuous drain current at 75V with improved on-resistance characteristics (4.5mOhm @ 75A). This part is suitable for applications where the 200A requirement can be reduced to 170A. The IRFB3207ZPBF (Infineon, Active) offers 120A at 75V with superior on-resistance (4.1mOhm @ 75A), appropriate for lower-current applications within the 75V class.

Alternative Substitutes - Reduced Voltage Class (60V):

The CSD18532KCS (Texas Instruments, Active, NexFET™ series) operates at 60V with 100A continuous drain current. This part is suitable only for applications where the 75V rating can be reduced to 60V. The IRFB3306PBF (Infineon, Active) provides 120A at 60V with ROHS3 compliance. The FDP050AN06A0 (onsemi, Active, PowerTrench® series) delivers 80A at 60V and is ROHS3 compliant.

Compliance and Regulatory Status:

All recommended active substitutes carry ROHS3 compliance and REACH Unaffected status, matching the regulatory profile of the original part. The IXTP230N075T2 is packaged in Tube format with unlimited moisture sensitivity level (MSL 1), consistent with the original device classification.

Frequently Asked Questions (FAQ)

Q: Can the IXTP230N075T2 be used as a direct replacement for the IXTP200N075T?

A: Yes. The IXTP230N075T2 is a direct substitute. Both devices operate at 75V, use TO-220-3 through-hole packaging, and support the same temperature range (-55°C to 175°C). The IXTP230N075T2 provides 230A continuous drain current, exceeding the original 200A specification. Gate drive voltage, threshold voltage, and maximum gate voltage specifications are identical.

Q: What is the difference between the IRFB3207PBF and IRFB3207ZPBF?

A: Both parts are Infineon HEXFET® devices in TO-220-3 packaging at 75V. The IRFB3207PBF provides 170A continuous drain current with 4.5mOhm on-resistance. The IRFB3207ZPBF provides 120A continuous drain current with 4.1mOhm on-resistance. Selection depends on the required current level for the application.

Q: Can 60V-rated devices substitute for the 75V IXTP200N075T?

A: 60V-rated devices (CSD18532KCS, IRFB3306PBF, FDP050AN06A0) are suitable only for applications where the system voltage does not exceed 60V. These parts cannot be used in circuits designed for 75V operation. Verify the maximum system voltage before selecting a 60V alternative.

Q: What is the significance of the TO-220-3 package specification?

A: The TO-220-3 package is a through-hole configuration with three leads (Gate, Drain, Source). All substitute parts listed maintain this package type, ensuring mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

Q: Why is the IXTP200N075T classified as obsolete?

A: The IXTP200N075T is an older device in the TrenchMV™ series. The IXTP230N075T2 from the newer TrenchT2™ series provides superior performance with higher current capacity and improved on-resistance characteristics, making it the recommended active alternative.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (IXTP230N075T2, IRFB3207PBF, IRFB3207ZPBF, CSD18532KCS, FDP050AN06A0, IRFB3306PBF) carry ROHS3 compliance certification. The obsolete parts (PSMN3R9-60PSQ) also carry ROHS3 compliance but have limited availability.

Q: What does "Tc" mean in the continuous drain current specification?

A: "Tc" denotes the current rating at the case temperature (Tc). This is the continuous drain current specification measured at the device case temperature, typically used for thermal design calculations and power dissipation analysis.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and allow faster switching speeds. The IXTP200N075T has 160nC gate charge, while the IXTP230N075T2 has 178nC. The difference is minimal and does not affect gate driver selection for standard 10V drive circuits.

Q: Can the IPP80N07S405AKSA1 be used as a substitute?

A: The IPP80N07S405AKSA1 (Infineon, 80A) provides reduced current capacity compared to the 200A requirement of the IXTP200N075T. This part is suitable only for applications with significantly lower current demands and cannot serve as a general replacement.

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