IXTP1R4N60P N-Channel 600V MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP1R4N60P is an N-Channel 600V MOSFET manufactured by IXYS in the PolarHV™ series, rated for 1.4A continuous drain current at 25°C with 50W maximum power dissipation. The device is packaged in a Through Hole TO-220-3 configuration and operates across a temperature range of -55°C to 150°C.

This part is classified as Obsolete, making it necessary to identify equivalent substitute components for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage, continuous drain current, on-state resistance, and thermal characteristics while accommodating the Through Hole TO-220 package family.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	1.4	A
Rds On (Max) @ Id, Vgs	9	Ohm @ 700mA, 10V
Power Dissipation (Max)	50	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP1R4N60P is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V minimum
Mounting Type: Through Hole
Package Family: TO-220 series (TO-220-3 or TO-220)
Operating Temperature Range: -55°C to 150°C minimum

Performance Alignment Parameters:

Continuous Drain Current (Id): 1.3A or greater at 25°C
On-State Resistance (Rds On): 9 Ohm or lower at specified gate voltage
Power Dissipation: 30W or greater

Both identified substitute parts meet the mandatory electrical and mechanical criteria. The AOT1N60 and IRFIBC20GPBF maintain the 600V Vdss rating, N-Channel configuration, Through Hole mounting, and TO-220 package family compatibility. Continuous drain current ratings of 1.3A and 1.7A respectively satisfy or exceed the 1.4A requirement of the original part.

Parameter Comparison

Parameter	IXTP1R4N60P	AOT1N60	IRFIBC20GPBF
Manufacturer	IXYS	Alpha & Omega Semiconductor Inc.	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	1.4 A	1.3 A	1.7 A
Rds On (Max) @ Id, Vgs	9 Ohm @ 700mA, 10V	9 Ohm @ 650mA, 10V	4.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5.5 V @ 25µA	4.5 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V	8 nC @ 10 V	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V	160 pF @ 25 V	350 pF @ 25 V
Power Dissipation (Max)	50 W	41.7 W	30 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Not For New Designs	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFIBC20GPBF is the preferred substitute for new designs. This part carries Active product status, ensuring long-term availability and manufacturing support. It is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The IRFIBC20GPBF provides superior on-state resistance performance at 4.4 Ohm compared to the original 9 Ohm specification, resulting in reduced power dissipation and improved thermal efficiency. The higher continuous drain current rating of 1.7A provides additional design margin above the 1.4A requirement.

AOT1N60 serves as an alternative substitute where IRFIBC20GPBF availability is constrained. This part maintains electrical parity with the original IXTP1R4N60P, offering identical on-state resistance of 9 Ohm and comparable gate charge characteristics. However, AOT1N60 carries a Not For New Designs status, limiting its suitability for long-term production applications. The part is ROHS3 compliant and REACH unaffected.

Both substitutes maintain the mandatory 600V Vdss rating, N-Channel configuration, Through Hole mounting, and TO-220-3 package compatibility. Operating temperature ranges of -55°C to 150°C align with the original specification.

Frequently Asked Questions (FAQ)

Q: Can the IRFIBC20GPBF directly replace the IXTP1R4N60P in existing circuit designs?

A: Yes. The IRFIBC20GPBF maintains electrical compatibility across all critical parameters: 600V Vdss, N-Channel configuration, Through Hole TO-220-3 package, and -55°C to 150°C operating range. The improved on-state resistance of 4.4 Ohm versus 9 Ohm reduces power dissipation, which is beneficial for thermal management. No circuit modifications are required.

Q: What is the difference between the TO-220 and TO-220-3 packages used by these parts?

A: Both AOT1N60 and IRFIBC20GPBF are specified with TO-220-3 package designation, which is identical to the original IXTP1R4N60P. The TO-220-3 is a three-lead Through Hole package with Gate, Drain, and Source terminals. Package pinout and mechanical dimensions are compatible across all three parts.

Q: Why does the IRFIBC20GPBF have higher gate charge and input capacitance than the original part?

A: Gate charge of 18 nC and input capacitance of 350 pF for the IRFIBC20GPBF reflect the improved on-state resistance performance. These characteristics are inherent to the device design and do not prevent substitution. Circuit designs must accommodate these values during gate driver selection and switching frequency analysis.

Q: Is the AOT1N60 suitable for new production designs?

A: The AOT1N60 carries a Not For New Designs product status. While electrically compatible, this designation indicates the manufacturer does not recommend this part for new applications. For ongoing production support of existing designs, AOT1N60 remains available. For new designs, IRFIBC20GPBF is the recommended choice.

Q: What compliance certifications apply to these substitute parts?

A: Both AOT1N60 and IRFIBC20GPBF are ROHS3 compliant and REACH unaffected. These certifications ensure compliance with current environmental and hazardous substance regulations applicable to electronic components in the European Union and related markets.

Q: How do the continuous drain current ratings affect circuit design?

A: The IXTP1R4N60P is rated for 1.4A continuous drain current. The AOT1N60 provides 1.3A, which is marginally lower but acceptable for applications designed to the original 1.4A specification with appropriate thermal management. The IRFIBC20GPBF provides 1.7A, offering additional design margin. Verify that actual circuit current requirements do not exceed the substitute part's rating.

Q: Are there thermal considerations when substituting these parts?

A: The IXTP1R4N60P is rated for 50W maximum power dissipation. The AOT1N60 is rated for 41.7W, and the IRFIBC20GPBF is rated for 30W. However, the IRFIBC20GPBF's lower on-state resistance (4.4 Ohm versus 9 Ohm) typically results in lower actual power dissipation in operation. Thermal design must account for the specific power dissipation rating of the selected substitute and the thermal resistance of the application's heat sink or PCB layout.

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