IXTP1R4N100P N-Channel 1000V 1.4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP1R4N100P is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by IXYS, rated for 1000V drain-to-source voltage with 1.4A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for high-voltage switching applications. This part is currently active in production with 920 pieces in stock inventory.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current, gate threshold voltage, on-state resistance, and package configuration. Substitution becomes necessary due to supply constraints, lead time requirements, or design optimization needs.

Substiute Parts

IXTP1R4N100P

IXYSIn Stock: 936IXTP1R4N100P Datasheet

Current PartRFQ

IRFBG20PBF

Vishay SiliconixIn Stock: 3874IRFBG20PBF Datasheet

SimilarRFQ

STP2NK100Z

STMicroelectronicsIn Stock: 2711STP2NK100Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTP1R4N100P are qualified based on the following critical parameters that must remain equivalent or superior:

Electrical Equivalence Criteria:

• Drain-to-source voltage (Vdss) rating of 1000V minimum
• Continuous drain current (Id) at 25°C of 1.4A or greater
• Gate threshold voltage (Vgs(th)) within compatible range (4.0V to 4.5V @ specified test current)
• On-state resistance (Rds On) at 10V gate drive not exceeding 11 Ohm at rated current
• Operating temperature range of -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Through-hole mounting configuration
• TO-220 package family (TO-220-3 or TO-220AB variants)
• Identical pin configuration and footprint compatibility

Compliance Criteria:

• ROHS3 compliance status
• Active product status in manufacturer portfolio
• Moisture Sensitivity Level (MSL) of 1 (Unlimited)

The substitute parts identified—STP2NK100Z and IRFBG20PBF—meet all electrical and mechanical requirements for direct substitution in the IXTP1R4N100P application circuit.

Parameter Comparison

Engineering Selection Recommendations

IXTP1R4N100P (Primary Part)

The IXTP1R4N100P remains the primary selection when available. This part is manufactured by IXYS under the Polar series and carries active product status with 920 units in current inventory. All compliance certifications are met: ROHS3 compliant, REACH unaffected, and MSL rating of 1 (Unlimited). The part is suitable for immediate deployment in high-voltage switching applications requiring 1000V rating and 1.4A continuous current capability.

STP2NK100Z (Preferred Substitute)

The STP2NK100Z manufactured by STMicroelectronics is the preferred substitute option. This device exceeds the electrical requirements of the IXTP1R4N100P with superior continuous drain current (1.85A versus 1.4A) and lower on-state resistance (8.5 Ohm versus 11 Ohm). The STP2NK100Z features reduced gate charge (16 nC versus 17.8 nC), enabling faster switching characteristics. Power dissipation capability is higher at 70W. The part maintains identical voltage rating (1000V), operating temperature range (-55°C to 150°C), and package configuration (TO-220-3). ROHS3 compliance and MSL 1 rating are confirmed. Inventory availability is 2650 units.

IRFBG20PBF (Alternative Substitute)

The IRFBG20PBF manufactured by Vishay Siliconix provides electrical equivalence with identical 1000V voltage rating and 1.4A continuous drain current. On-state resistance matches the IXTP1R4N100P specification at 11 Ohm. Gate threshold voltage is slightly lower at 4.0V (versus 4.5V), which may require gate drive circuit verification in applications with marginal gate voltage margins. Gate charge is elevated at 38 nC compared to 17.8 nC in the primary part, resulting in slower switching response. Power dissipation is rated at 54W, which is lower than the primary part. The IRFBG20PBF maintains ROHS3 compliance, MSL 1 rating, and TO-220-3 package compatibility. Inventory availability is 3858 units.

Frequently Asked Questions (FAQ)

Q: Can the STP2NK100Z be used as a direct replacement for the IXTP1R4N100P without circuit modification?

A: Yes. The STP2NK100Z meets all electrical and mechanical substitution criteria. The device maintains 1000V voltage rating, exceeds the 1.4A current requirement, and is housed in the identical TO-220-3 package. Pin configuration and footprint are compatible. Superior performance characteristics (lower Rds On, reduced gate charge) make this a direct drop-in replacement.

Q: What is the primary difference between the STP2NK100Z and IRFBG20PBF substitutes?

A: The STP2NK100Z offers superior switching performance with lower gate charge (16 nC versus 38 nC) and lower on-state resistance (8.5 Ohm versus 11 Ohm). The IRFBG20PBF provides higher inventory availability (3858 units versus 2650 units) but exhibits slower switching characteristics due to elevated gate charge. Both devices maintain electrical equivalence at the 1.4A current level and 1000V voltage rating.

Q: Is the gate threshold voltage difference between IRFBG20PBF (4.0V) and IXTP1R4N100P (4.5V) significant?

A: The 0.5V difference in gate threshold voltage (Vgs(th)) is within acceptable substitution tolerance for most applications. However, circuits operating with marginal gate drive voltage margins should verify gate drive adequacy. The IRFBG20PBF requires gate voltage to exceed 4.0V for reliable turn-on, compared to 4.5V for the primary part. Standard gate drive circuits operating at 10V or higher will function correctly with both devices.

Q: Why does the IRFBG20PBF have higher gate charge than the other devices?

A: Gate charge (Qg) is a device-specific characteristic determined by the internal capacitance structure and semiconductor process technology. The IRFBG20PBF exhibits 38 nC gate charge compared to 17.8 nC (IXTP1R4N100P) and 16 nC (STP2NK100Z). Higher gate charge results in longer switching transition times and increased gate drive power dissipation. Applications requiring high-frequency switching or low gate drive power consumption should prioritize the STP2NK100Z or IXTP1R4N100P.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IXTP1R4N100P, STP2NK100Z, and IRFBG20PBF are all ROHS3 compliant with MSL rating of 1 (Unlimited). All devices are REACH unaffected and carry EAR99 export classification. These certifications confirm suitability for applications requiring environmental and regulatory compliance.

Q: What is the significance of the power dissipation ratings (63W, 70W, 54W)?

A: Power dissipation ratings indicate the maximum thermal power the device can safely dissipate at the case temperature (Tc) limit. The STP2NK100Z (70W) provides the highest thermal margin, followed by the IXTP1R4N100P (63W), and IRFBG20PBF (54W). In thermally constrained applications, the STP2NK100Z offers superior thermal headroom. However, all three devices are suitable for equivalent current and voltage conditions when proper thermal management is implemented.

Q: Can these devices be used interchangeably in existing PCB designs?

A: Yes. All three devices share identical TO-220-3 package configuration and pin assignment. PCB footprints, lead spacing, and mounting hole patterns are compatible. No PCB redesign is required for substitution. However, thermal management design (heatsink contact area, mounting pressure) should be verified to ensure adequate heat dissipation for the selected device.

Q: Which substitute part should be selected for new designs?

A: The STP2NK100Z is recommended for new designs. This device provides superior electrical performance (lower Rds On, reduced gate charge, higher power dissipation capability) while maintaining full compatibility with the IXTP1R4N100P footprint and electrical interface. The STP2NK100Z enables faster switching, lower gate drive power consumption, and improved thermal performance compared to the primary part.