IXTP1N100 N-Channel MOSFET 1000V 1.5A Equivalent & Substitute Parts

Part Overview

The IXTP1N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 1.5A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part carries a "Not For New Designs" product status, indicating that IXYS has discontinued active development for this model. Identification of equivalent and substitute parts is necessary to support existing designs, facilitate board-level replacements, and enable migration to active product lines where applicable.

Substiute Parts

IXTP1N100

IXYSIn Stock: 975IXTP1N100 Datasheet

Current PartRFQ

IXFP4N100P

IXYSIn Stock: 1007IXFP4N100P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTP1N100 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 1000V
• Package/Case: Must be TO-220-3 through-hole configuration
• FET Type: Must be N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C

Allowable Variation Parameters: Substitute parts may exceed the following specifications without compromising compatibility:

• Continuous Drain Current (Id): Substitute may be rated higher than 1.5A
• Power Dissipation: Substitute may be rated higher than 54W
• On-State Resistance (Rds On): Substitute may be lower (improved performance)
• Gate Charge (Qg): Substitute may differ within the same voltage class

The IXFP4N100P meets all critical matching parameters and is therefore qualified as a direct substitute for the IXTP1N100.

Parameter Comparison

Engineering Selection Recommendations

IXFP4N100P as Primary Substitute:

The IXFP4N100P is a qualified direct substitute for the IXTP1N100 based on electrical and mechanical compatibility. Both devices share identical voltage ratings (1000V Vdss), identical package configuration (TO-220-3 through-hole), and identical operating temperature range (-55°C to 150°C). Both parts are ROHS3 compliant, carry MSL Level 1 (unlimited moisture sensitivity), and are REACH unaffected.

The IXFP4N100P offers enhanced performance characteristics: continuous drain current is rated at 4A compared to 1.5A, power dissipation capability is 150W versus 54W, and on-state resistance is reduced to 3.3Ω at 2A, 10V compared to 11Ω at 1A, 10V. These improvements provide superior thermal performance and lower conduction losses in switching applications.

The IXFP4N100P carries an "Active" product status, indicating ongoing manufacturer support and availability. This status makes it the preferred choice for new board revisions and long-term supply chain continuity.

Compliance and Certification:

Both the IXTP1N100 and IXFP4N100P meet identical regulatory requirements: ROHS3 compliance, REACH unaffected status, and EAR99 export classification. No additional compliance verification is required for substitution.

Frequently Asked Questions (FAQ)

Q: Can the IXFP4N100P be used as a direct replacement for the IXTP1N100 in existing designs?

A: Yes. The IXFP4N100P is electrically and mechanically compatible with the IXTP1N100. Both devices have identical 1000V Vdss ratings, identical TO-220-3 package configuration, and identical operating temperature ranges. The IXFP4N100P can be substituted without circuit modification.

Q: What are the key differences between the IXTP1N100 and IXFP4N100P?

A: The primary differences are continuous drain current (1.5A vs. 4A), power dissipation rating (54W vs. 150W), on-state resistance (11Ω vs. 3.3Ω), and product status (Not For New Designs vs. Active). The IXFP4N100P provides improved performance and ongoing manufacturer support.

Q: Are there any gate drive voltage differences that affect circuit design?

A: Both devices use 10V as the drive voltage for maximum Rds On specification. However, the IXFP4N100P has a maximum Vgs rating of ±20V compared to ±30V for the IXTP1N100. Existing gate drive circuits operating within ±20V are fully compatible with both devices.

Q: Does the higher input capacitance of the IXFP4N100P affect switching performance?

A: The IXFP4N100P has higher input capacitance (1456 pF vs. 400 pF at 25V) and higher gate charge (26 nC vs. 14.5 nC at 10V). These parameters may require gate drive circuit evaluation in high-frequency switching applications. Existing designs operating at standard switching frequencies are not adversely affected.

Q: Are both parts available in the same packaging format?

A: Yes. Both the IXTP1N100 and IXFP4N100P are supplied in TO-220-3 through-hole packages. No PCB layout modifications are required for substitution.

Q: What is the significance of the "Not For New Designs" status on the IXTP1N100?

A: This status indicates that IXYS has discontinued active development and marketing of the IXTP1N100. The part remains available for existing designs but is not recommended for new product development. The IXFP4N100P, with "Active" status, is the recommended choice for new designs requiring 1000V N-Channel MOSFET functionality.

Q: Are both parts RoHS compliant?

A: Yes. Both the IXTP1N100 and IXFP4N100P are ROHS3 compliant and carry MSL Level 1 (unlimited moisture sensitivity). No additional environmental qualification is required.