IXTP18N60PM N-Channel 600V 9A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP18N60PM is an N-Channel 600V 9A MOSFET manufactured by IXYS in a TO-220 Isolated Tab package. This device is classified as obsolete product status. The part operates across a temperature range of -55°C to 150°C and is suitable for through-hole applications requiring 600V drain-to-source voltage capability with 9A continuous drain current at 25°C.

Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain compatibility across critical electrical parameters including drain-to-source voltage, continuous drain current, on-state resistance, and gate charge characteristics, while accommodating the through-hole TO-220 package form factor.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	9	A (Tc)
Rds On (Max) @ Id, Vgs	420	mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs	49	nC @ 10V
Vgs(th) (Max) @ Id	5.5	V @ 250µA
Power Dissipation (Max)	90	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-220-3
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXTP18N60PM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 9A or greater at 25°C
On-State Resistance (Rds On): 420 mOhm or lower at rated conditions
Gate Charge (Qg): Comparable to 49 nC at 10V to ensure drive circuit compatibility
Package Type: Through-hole TO-220-3 configuration
Temperature Range: -55°C to 150°C minimum
Compliance: ROHS3 compliant, REACH unaffected

Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents (600V, 9-11A range): Parts that maintain 600V Vdss with drain current ratings between 9A and 11A, on-state resistance within acceptable tolerance, and comparable gate charge characteristics. These devices provide direct functional replacement with minimal circuit redesign.

Category B - Higher Voltage or Current Alternatives (600V+, 10A+): Parts that exceed the original specifications in voltage rating or current capacity while maintaining 600V or higher Vdss. These devices offer enhanced performance margins and are suitable for applications where increased headroom is beneficial.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Product Status	Package
IXTP18N60PM	IXYS	600	9	420 @ 9A, 10V	49 @ 10V	90	Obsolete	TO-220-3
AOT11S60L	Alpha & Omega Semiconductor	600	11	399 @ 3.8A, 10V	11 @ 10V	178	Not For New Designs	TO-220-3
STP11N60DM2	STMicroelectronics	600	10	420 @ 5A, 10V	16.5 @ 10V	110	Active	TO-220-3
STP13N60M2	STMicroelectronics	600	11	380 @ 5.5A, 10V	17 @ 10V	110	Active	TO-220-3
STP13NK60Z	STMicroelectronics	600	13	550 @ 4.5A, 10V	92 @ 10V	150	Active	TO-220-3
STP13NM60ND	STMicroelectronics	600	11	380 @ 5.5A, 10V	24.5 @ 10V	109	Active	TO-220-3
STP14N80K5	STMicroelectronics	800	12	445 @ 6A, 10V	22 @ 10V	130	Active	TO-220-3
IPP60R600P7XKSA1	Infineon Technologies	650	6	600 @ 1.7A, 10V	9 @ 10V	30	Active	TO-220-3
IPP80R600P7XKSA1	Infineon Technologies	800	8	600 @ 3.4A, 10V	20 @ 10V	60	Active	TO-220-3

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status):

The following parts are recommended as direct substitutes based on active product status and electrical parameter alignment:

STP11N60DM2 (STMicroelectronics MDmesh™ DM2 Series) - Active status. Maintains 600V Vdss with 10A continuous drain current, matching the original 420 mOhm on-state resistance specification. Gate charge of 16.5 nC is significantly lower than the original 49 nC, resulting in reduced drive circuit power requirements. Power dissipation rating of 110W exceeds the original 90W specification, providing thermal margin. ROHS3 compliant with unlimited moisture sensitivity level.

STP13N60M2 (STMicroelectronics MDmesh™ II Plus Series) - Active status. Provides 600V Vdss with 11A continuous drain current. On-state resistance of 380 mOhm is superior to the original 420 mOhm specification. Gate charge of 17 nC is substantially lower than the original 49 nC. Power dissipation of 110W provides thermal headroom. ROHS3 compliant with unlimited moisture sensitivity level.

STP13NM60ND (STMicroelectronics FDmesh™ II Series) - Active status. Maintains 600V Vdss with 11A continuous drain current and 380 mOhm on-state resistance. Gate charge of 24.5 nC remains significantly lower than the original specification. Power dissipation of 109W provides adequate thermal performance. ROHS3 compliant with unlimited moisture sensitivity level.

Secondary Substitutes (Higher Voltage Rating):

STP14N80K5 (STMicroelectronics MDmesh™ K5 Series) - Active status. Provides enhanced voltage rating of 800V with 12A continuous drain current. Suitable for applications requiring increased voltage margin. On-state resistance of 445 mOhm is comparable to the original specification. Gate charge of 22 nC is lower than the original 49 nC. Power dissipation of 130W provides substantial thermal margin. ROHS3 compliant.

Parts Not Recommended for New Designs:

AOT11S60L (Alpha & Omega Semiconductor aMOS™ Series) - Product status is "Not For New Designs." Although electrical parameters are compatible, this designation indicates the manufacturer does not recommend this part for new circuit development.

Obsolete Parts:

IXTP18N60PM - Original part is obsolete and should not be used in new designs.

Parts with Reduced Current Capacity:

IPP60R600P7XKSA1 and IPP80R600P7XKSA1 (Infineon CoolMOS™ P7 Series) - These parts have reduced continuous drain current ratings (6A and 8A respectively) compared to the original 9A specification. These devices are suitable only for applications with lower current requirements and are not recommended as direct substitutes for the IXTP18N60PM.

Frequently Asked Questions (FAQ)

Q: Can the STP11N60DM2 directly replace the IXTP18N60PM without circuit modifications?

A: The STP11N60DM2 maintains the same 600V drain-to-source voltage and provides 10A continuous drain current, exceeding the original 9A specification. On-state resistance is identical at 420 mOhm. The primary difference is gate charge: the STP11N60DM2 has 16.5 nC compared to the original 49 nC. This lower gate charge reduces drive circuit power dissipation and may improve switching speed. The part is pin-compatible in TO-220-3 package configuration. No circuit modifications are required for basic functionality, though drive circuit optimization may be beneficial.

Q: Why do some substitute parts have lower gate charge than the original IXTP18N60PM?

A: Gate charge (Qg) represents the total charge required to drive the MOSFET gate from off to on state. Lower gate charge indicates improved switching characteristics and reduced drive circuit power requirements. Parts such as STP11N60DM2 (16.5 nC) and STP13N60M2 (17 nC) represent advances in MOSFET technology compared to the original 49 nC specification. Lower gate charge is advantageous in high-frequency switching applications and reduces thermal stress on gate driver circuits.

Q: Is the STP13NK60Z suitable as a substitute despite its higher gate charge of 92 nC?

A: The STP13NK60Z maintains 600V Vdss and provides 13A continuous drain current, exceeding the original 9A specification. However, the gate charge of 92 nC is significantly higher than the original 49 nC. This increased gate charge requires greater drive circuit current and power dissipation. The part is suitable only for applications where the higher current capacity is required and where the drive circuit can accommodate the increased gate charge. For direct replacement in existing designs, parts with lower gate charge such as STP11N60DM2 or STP13N60M2 are preferred.

Q: What is the significance of the TO-220-3 package designation?

A: The TO-220-3 package is a through-hole configuration with three leads: Gate, Drain, and Source. All substitute parts listed maintain this package form factor, ensuring mechanical and electrical compatibility with existing printed circuit board layouts. The "Isolated Tab" designation on the original IXTP18N60PM indicates the drain tab is electrically isolated from the case, which is standard for most TO-220 MOSFETs. Verify PCB mounting hole spacing and thermal management provisions are compatible with the selected substitute part.

Q: Why are Infineon IPP60R600P7XKSA1 and IPP80R600P7XKSA1 not recommended as direct substitutes?

A: Both Infineon parts have continuous drain current ratings below the original 9A specification. The IPP60R600P7XKSA1 provides only 6A at 25°C, and the IPP80R600P7XKSA1 provides 8A. These reduced current ratings make them unsuitable for applications requiring the full 9A capability of the original IXTP18N60PM. These parts are suitable only for applications with lower current requirements. Additionally, the on-state resistance of 600 mOhm is significantly higher than the original 420 mOhm specification, resulting in increased power dissipation at rated current.

Q: Are all substitute parts ROHS3 compliant?

A: Yes, all substitute parts listed in this reference are ROHS3 compliant and REACH unaffected. This ensures compatibility with environmental regulations and procurement requirements for applications subject to these compliance standards. The original IXTP18N60PM is also ROHS3 compliant.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Active" status indicates the manufacturer continues to produce and support the part for new designs and ongoing production. "Not For New Designs" status indicates the manufacturer no longer recommends the part for new circuit development, though existing inventory may be available. For new designs, parts with "Active" status are preferred to ensure long-term availability and manufacturer support.

Q: Can the STP14N80K5 with 800V rating be used in place of the 600V IXTP18N60PM?

A: The STP14N80K5 has an 800V drain-to-source voltage rating, which exceeds the original 600V specification. This higher voltage rating provides additional safety margin in applications subject to voltage transients or overvoltage conditions. The part provides 12A continuous drain current, exceeding the original 9A specification. On-state resistance of 445 mOhm is comparable to the original 420 mOhm. The STP14N80K5 is suitable as a substitute when enhanced voltage margin is beneficial. However, the higher voltage rating may result in slightly increased on-state resistance and gate charge compared to 600V-rated alternatives.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on application requirements. For direct replacement with minimal circuit changes, choose parts maintaining 600V Vdss with 9A or greater continuous drain current and comparable on-state resistance, such as STP11N60DM2 or STP13N60M2. For applications requiring enhanced voltage margin, consider STP14N80K5 with 800V rating. For applications with lower current requirements, Infineon CoolMOS™ parts may be suitable. Verify that the selected part's gate charge is compatible with your gate driver circuit. Confirm thermal management provisions accommodate the power dissipation rating of the selected substitute.

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