IXTP182N055T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP182N055T is an N-Channel MOSFET manufactured by IXYS in the TrenchMV™ series, rated for 55V drain-to-source voltage and 182A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 360W. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	182	A
On-State Resistance (Rds On) @ 25A, 10V	5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	114	nC
Input Capacitance (Ciss) @ 25V	4850	pF
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP182N055T is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating equal to or greater than 55V to ensure safe operation in the original circuit.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 182A at 25°C to meet or exceed the original performance specification.

Thermal Performance: Power dissipation capability must be sufficient for the intended application. The original part is rated at 360W maximum.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with existing gate drive circuitry, typically within the ±20V maximum gate voltage specification.

Package and Mounting: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal compatibility with existing PCB layouts and heatsinking arrangements.

On-State Resistance: Rds On values determine conduction losses and heat generation. Lower Rds On values indicate improved efficiency.

Substitutes are grouped into two categories: Direct Equivalents (same voltage and current ratings, active product status) and Functional Alternatives (compatible voltage/current parameters with different thermal or electrical characteristics).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IXTP182N055T	IXYS	55	182	5.0 @ 25A, 10V	114 @ 10V	360	Obsolete	TO-220-3
IXTP200N055T2	IXYS	55	200	4.2 @ 50A, 10V	109 @ 10V	360	Active	TO-220-3
IRF1405PBF	Infineon	55	169	5.3 @ 101A, 10V	260 @ 10V	330	Active	TO-220-3
IRF1405ZPBF	Infineon	55	75	4.9 @ 75A, 10V	180 @ 10V	230	Active	TO-220-3
IRF3205PBF	Infineon	55	110	8.0 @ 62A, 10V	146 @ 10V	200	Active	TO-220-3
IRF3205ZPBF	Infineon	55	75	6.5 @ 66A, 10V	110 @ 10V	170	Active	TO-220-3
IRFB3207PBF	Infineon	75	170	4.5 @ 75A, 10V	260 @ 10V	330	Active	TO-220-3
IRFB3207ZPBF	Infineon	75	120	4.1 @ 75A, 10V	170 @ 10V	300	Active	TO-220-3
IRFB3306GPBF	Infineon	60	120	4.2 @ 75A, 10V	120 @ 10V	230	Not For New Designs	TO-220-3
CSD18532KCS	Texas Instruments	60	100	4.2 @ 100A, 10V	53 @ 10V	250	Active	TO-220-3
IPP052N06L3GXKSA1	Infineon	60	80	5.0 @ 80A, 10V	50 @ 4.5V	115	Active	TO-220-3

Engineering Selection Recommendations

Primary Substitute: IXTP200N055T2 (IXYS, Active)

The IXTP200N055T2 is the direct successor within the IXYS product family. It maintains identical voltage rating (55V) and exceeds the original current specification (200A vs. 182A). The part is active and fully supported. Rds On is improved at 4.2 mOhm, reducing conduction losses. Gate charge is slightly lower at 109 nC, improving switching performance. Power dissipation remains at 360W. This part is the preferred choice for direct replacement in new designs.

Secondary Substitutes (55V Voltage Class):

IRF1405PBF and IRF1405ZPBF (Infineon, HEXFET® series, Active) provide 55V compatibility. IRF1405PBF delivers 169A continuous current with 330W power dissipation, closely matching the original specification. Both parts are RoHS3 compliant and actively produced. Gate charge is higher (260 nC and 180 nC respectively), which may require gate drive circuit evaluation.

IRF3205PBF and IRF3205ZPBF (Infineon, HEXFET® series, Active) operate at 55V with reduced current ratings (110A and 75A respectively). These are suitable only for applications where the full 182A current is not required. Both are RoHS3 compliant and actively produced.

Alternative Substitutes (Higher Voltage Rating):

IRFB3207PBF and IRFB3207ZPBF (Infineon, HEXFET® series, Active) provide 75V voltage rating with 170A and 120A current ratings respectively. The higher voltage rating provides additional design margin but may increase on-state resistance and input capacitance. Both are RoHS3 compliant and actively produced.

Lower Current Alternatives (60V Voltage Class):

CSD18532KCS (Texas Instruments, NexFET™, Active) and IPP052N06L3GXKSA1 (Infineon, OptiMOS™, Active) operate at 60V with reduced current ratings (100A and 80A respectively). These are suitable only for applications with lower current requirements. Both are RoHS3 compliant and actively produced.

IRFB3306GPBF (Infineon, HEXFET®, Not For New Designs) is marked as not recommended for new designs despite active inventory status and should be avoided for new product development.

Compliance Status: All recommended active substitutes are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can IXTP200N055T2 be used as a direct replacement for IXTP182N055T?

A: Yes. Both parts share identical 55V voltage rating and TO-220-3 packaging. IXTP200N055T2 exceeds the original current specification (200A vs. 182A) and improves on-state resistance (4.2 mOhm vs. 5.0 mOhm). The part is active and fully supported. Gate charge is slightly lower, improving switching performance. No circuit modifications are required.

Q: What is the significance of the "Z" suffix in part numbers like IRF1405ZPBF?

A: The "Z" suffix indicates a lower current rating variant within the same voltage class and package family. IRF1405ZPBF is rated for 75A continuous current compared to IRF1405PBF at 169A. Selection depends on the actual current requirements of the application. Both share the same 55V voltage rating and TO-220-3 package.

Q: Why do some substitutes have higher voltage ratings (75V) than the original (55V)?

A: Higher voltage-rated devices provide additional design margin and can operate safely in circuits designed for lower voltages. However, higher voltage ratings typically result in increased on-state resistance, input capacitance, and gate charge. Selection should be based on actual circuit requirements. A 55V-rated substitute is preferred if available to minimize parasitic effects.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended active substitutes are RoHS3 compliant. IRFB3306GPBF is RoHS3 compliant but marked as "Not For New Designs" and should be avoided for new product development. Compliance documentation is available from manufacturers upon request.

Q: What is the impact of different gate charge (Qg) values on circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge (e.g., 260 nC in IRF1405PBF vs. 114 nC in IXTP182N055T) requires more gate drive current or longer switching times. If gate drive circuitry is current-limited, higher gate charge may result in slower switching and increased switching losses. Gate drive circuit evaluation is recommended when substituting parts with significantly different Qg values.

Q: Can parts rated for 60V or 75V be used in a 55V circuit?

A: Yes. Higher voltage-rated devices can operate safely in lower voltage circuits. The drain-to-source voltage will not exceed the circuit supply voltage. However, higher voltage ratings typically increase on-state resistance and input capacitance. Use higher voltage ratings only when 55V-rated alternatives are unavailable or when additional design margin is specifically required.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both designations refer to the same three-lead through-hole package format used for power MOSFETs. TO-220-3 and TO-220AB are functionally equivalent and mechanically compatible. All substitute parts listed use this package type and are directly compatible with existing PCB layouts and heatsinking arrangements.

Q: Is IRFB3306GPBF suitable for new designs?

A: No. IRFB3306GPBF is marked as "Not For New Designs" by the manufacturer. While inventory is available and the part is RoHS3 compliant, it should not be selected for new product development. Use IXTP200N055T2, IRF1405PBF, or other active-status alternatives instead.

Q: How do I determine which substitute is best for my application?

A: Evaluate substitutes based on: (1) Voltage rating must equal or exceed 55V; (2) Continuous current rating must meet or exceed 182A for full compatibility, or be evaluated against actual circuit current requirements; (3) Power dissipation capability must be sufficient for the thermal environment; (4) Gate charge compatibility with existing gate drive circuitry; (5) Product status—prefer active parts over obsolete or "Not For New Designs" classifications; (6) Compliance requirements (RoHS3, REACH, export control). IXTP200N055T2 is the recommended primary choice for direct replacement.

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