IXTP160N075T N-Channel 75V 160A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP160N075T is an N-Channel MOSFET manufactured by IXYS in the TrenchMV™ series, rated for 75V drain-to-source voltage and 160A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 360W at case temperature. This part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current @ 25°C (Id)	160	A (Tc)
On-State Resistance (Rds On) @ 25A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	112	nC
Input Capacitance (Ciss) @ 25V	4950	pF
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTP160N075T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 160A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 175°C minimum
Gate Drive Voltage: Compatible with 10V drive voltage

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit requirements
Input Capacitance (Ciss): Affects switching speed and drive circuit design
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into two categories based on voltage and current ratings:

Category 1 - Direct Voltage/Current Match (75V, ≥160A): Parts maintaining the 75V Vdss rating with equal or higher current ratings provide direct functional replacement with minimal circuit redesign.

Category 2 - Reduced Voltage Rating (60V, ≥100A): Parts with 60V Vdss rating represent functional substitutes for applications where the 75V rating exceeds system requirements. These parts maintain sufficient current capacity but operate at lower voltage stress margins.

Parameter Comparison

Parameter	IXTP160N075T	IXTP170N075T2	IRFB3307ZPBF	IRFB3307PBF	CSD18533KCS	DMT6005LCT	DMT6010SCT	DMTH6005LCT	DMTH6010SCT
Vdss (V)	75	75	75	75	60	60	60	60	60
Id @ 25°C (A)	160	170	120	130	100	100	98	100	100
Rds On (mOhm)	6.0	5.4	5.8	6.3	6.3	6.0	7.2	6.0	7.2
Vgs(th) (V)	4.0	4.0	4.0	4.0	2.3	3.0	4.0	3.0	4.0
Qg (nC)	112	109	110	180	34	47.1	36.3	47.1	36.3
Ciss (pF)	4950	6860	4750	5150	3025	2962	1940	2962	1940
Pd Max (W)	360	360	230	200	192	104	104	125	125
Tj Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Manufacturer	IXYS	IXYS	Infineon	Infineon	Texas Instruments	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute - Direct Replacement:

The IXTP170N075T2 (IXYS, TrenchT2™ series) is the primary substitute for the IXTP160N075T. This part maintains the 75V Vdss rating and exceeds the 160A current requirement at 170A continuous drain current. The IXTP170N075T2 is active in production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The improved on-state resistance of 5.4mOhm at 50A, 10V compared to 6mOhm at 25A, 10V of the original part provides enhanced thermal performance. Operating temperature range matches the original specification at -55°C to 175°C.

Secondary Substitutes - Same Voltage Rating:

The IRFB3307ZPBF and IRFB3307PBF (Infineon, HEXFET® series) maintain the 75V Vdss rating with active product status and ROHS3 compliance. The IRFB3307ZPBF provides 120A continuous drain current with 230W power dissipation, while the IRFB3307PBF provides 130A with 200W power dissipation. Both parts operate within the -55°C to 175°C temperature range. These substitutes are suitable for applications where the 160A current requirement can be met through parallel configurations or where the application current demand is lower than the original specification.

Alternative Substitutes - Reduced Voltage Rating:

The CSD18533KCS (Texas Instruments, NexFET™ series), DMT6005LCT, DMT6010SCT, DMTH6005LCT, and DMTH6010SCT (Diodes Incorporated) represent functional alternatives for applications where 60V Vdss rating is acceptable. These parts are active in production with ROHS3 compliance. The Diodes Incorporated parts (DMT and DMTH series) include automotive-grade qualification (AEC-Q101) for applications requiring automotive reliability standards. The DMTH series parts support the full -55°C to 175°C operating temperature range, while DMT series parts are limited to -55°C to 150°C. These 60V alternatives are suitable for applications with lower voltage stress requirements or where cost optimization is a design objective.

Frequently Asked Questions (FAQ)

Q: Can the IXTP170N075T2 be used as a direct drop-in replacement for the IXTP160N075T?

A: Yes. The IXTP170N075T2 maintains identical voltage rating (75V), exceeds current rating (170A vs. 160A), uses the same TO-220-3 package, and supports the same operating temperature range (-55°C to 175°C). No circuit modifications are required for functional substitution.

Q: What is the primary difference between the IRFB3307ZPBF and IRFB3307PBF?

A: Both parts are Infineon HEXFET® devices with 75V Vdss rating and TO-220-3 packaging. The IRFB3307ZPBF is rated for 120A continuous drain current with 230W power dissipation, while the IRFB3307PBF is rated for 130A with 200W power dissipation. Selection depends on application current requirements and thermal management capabilities.

Q: Why are the 60V rated parts (CSD18533KCS, DMT series, DMTH series) listed as substitutes for a 75V device?

A: These parts are listed as functional alternatives for applications where the system voltage does not require the full 75V rating margin. The 60V Vdss rating is sufficient for many industrial and consumer applications. However, substitution requires verification that the application voltage stress does not exceed 60V under normal and fault conditions.

Q: What is the significance of the automotive-grade qualification (AEC-Q101) on the Diodes Incorporated parts?

A: AEC-Q101 qualification indicates that the DMT6005LCT, DMT6010SCT, DMTH6005LCT, and DMTH6010SCT have been tested and validated to automotive reliability standards. These parts are suitable for automotive applications requiring compliance with automotive supplier quality requirements. Non-automotive applications may use these parts without requiring the automotive qualification.

Q: Are there differences in gate charge (Qg) between substitute parts, and does this affect circuit design?

A: Yes. Gate charge varies significantly across substitutes, ranging from 34nC (CSD18533KCS) to 180nC (IRFB3307PBF). Lower gate charge reduces drive circuit power requirements and enables faster switching. Higher gate charge requires more robust gate drive circuitry. The original IXTP160N075T has 112nC gate charge. Substitutes with significantly different gate charge values may require gate drive circuit optimization.

Q: What is the difference between the DMT and DMTH series from Diodes Incorporated?

A: Both series are 60V N-Channel MOSFETs in TO-220-3 packaging with automotive qualification. The primary difference is maximum power dissipation: DMT series is rated for 104W (Tc), while DMTH series is rated for 125W (Tc). The DMTH series also supports the full -55°C to 175°C operating temperature range, while DMT series is limited to -55°C to 150°C. Selection depends on thermal management requirements and operating temperature specifications.

Q: Can multiple lower-current substitute parts be paralleled to achieve the 160A requirement?

A: Parallel operation of MOSFETs is technically feasible but requires careful circuit design to ensure balanced current distribution. Gate drive circuits must be designed to minimize voltage differences between parallel devices. Thermal management must account for current distribution across all parallel devices. This approach is not recommended without detailed analysis of gate drive impedance, PCB layout, and thermal characteristics.

Q: What compliance certifications are relevant for substitute part selection?

A: All listed substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original IXTP160N075T. The Diodes Incorporated parts (DMT and DMTH series) include AEC-Q101 automotive qualification for applications requiring automotive supplier standards. Selection should verify that substitute part compliance certifications meet application regulatory requirements.

Q: How does on-state resistance (Rds On) affect thermal performance in the application?

A: On-state resistance directly determines conduction losses in the MOSFET. Lower Rds On values reduce power dissipation and heat generation. The IXTP170N075T2 provides 5.4mOhm Rds On compared to 6mOhm for the original part, resulting in improved thermal performance. Substitutes with higher Rds On values (such as DMT6010SCT at 7.2mOhm) generate more heat and may require enhanced thermal management or derating of continuous current capability.

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