IXTP15N50L2 Equivalent & Substitute Parts

Part Overview

The IXTP15N50L2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 15A continuous drain current at 25°C. This device is manufactured by IXYS and belongs to the Linear L2™ series. The component is housed in a TO-220-3 through-hole package and is designed for high-voltage switching applications requiring 300W maximum power dissipation.

The IXTP15N50L2 maintains Active product status with full RoHS3 compliance and REACH unaffected designation. Identifying equivalent and substitute parts is necessary when TO-220-3 package availability is limited, when alternative mounting configurations are required for specific PCB layouts, or when sourcing from alternative inventory channels becomes necessary.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
Rds On (Max) @ 7.5A, 10V	480	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	123	nC
Input Capacitance (Ciss) @ 25V	4080	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP15N50L2 is determined by electrical parameter equivalence and package compatibility. The primary substitution criterion is matching all critical electrical specifications: Vdss (500V), continuous drain current (15A @ 25°C), Rds On (480mOhm @ 7.5A, 10V), gate threshold voltage (4.5V @ 250µA), gate charge (123nC @ 10V), input capacitance (4080pF @ 25V), and power dissipation rating (300W).

The IXTP15N50L2 is substitutable with parts that maintain identical electrical performance across these parameters. Package differences between TO-220-3 and alternative through-hole configurations represent the primary distinction among equivalent devices. Both the main part and substitute parts share the same base electrical characteristics, FET type (N-Channel), technology (MOSFET Metal Oxide), series designation (Linear L2™), and thermal operating range (-55°C to 150°C).

Parameter Comparison

Parameter	IXTP15N50L2 (TO-220-3)	IXTH15N50L2 (TO-247-3)
Manufacturer	IXYS	IXYS
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V
Continuous Drain Current (Id) @ 25°C	15 A (Tc)	15 A (Tc)
Rds On (Max) @ 7.5A, 10V	480 mOhm	480 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5 V	4.5 V
Gate Charge (Qg) @ 10V	123 nC	123 nC
Input Capacitance (Ciss) @ 25V	4080 pF	4080 pF
Power Dissipation (Max)	300 W (Tc)	300 W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Series	Linear L2™	Linear L2™
Product Status	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3	TO-247-3

Engineering Selection Recommendations

The IXTP15N50L2 and IXTH15N50L2 are electrically equivalent N-Channel MOSFETs within the IXYS Linear L2™ series. Both devices maintain Active product status and full compliance with RoHS3 and REACH requirements, ensuring regulatory alignment for current and future applications.

Selection between these parts is determined by package requirements and PCB layout constraints. The IXTP15N50L2 utilizes the TO-220-3 package, while the IXTH15N50L2 utilizes the TO-247-3 package. Both packages are through-hole configurations with identical electrical performance. The TO-247-3 package provides an alternative mounting footprint when TO-220-3 space allocation or thermal management requirements differ.

Both parts carry Moisture Sensitivity Level (MSL) 1 (Unlimited) and share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Inventory availability differs between the two variants, with the IXTH15N50L2 currently showing higher stock levels (15,460 pcs) compared to the IXTP15N50L2 (1,082 pcs).

Frequently Asked Questions (FAQ)

Q: Are the IXTP15N50L2 and IXTH15N50L2 electrically interchangeable?

A: Yes. Both devices are electrically identical N-Channel MOSFETs with matching Vdss (500V), continuous drain current (15A @ 25°C), Rds On (480mOhm @ 7.5A, 10V), gate threshold voltage (4.5V @ 250µA), gate charge (123nC @ 10V), input capacitance (4080pF @ 25V), and power dissipation (300W). The only difference is the package configuration.

Q: What is the primary difference between these substitute parts?

A: The IXTP15N50L2 is packaged in TO-220-3, while the IXTH15N50L2 is packaged in TO-247-3. Both are through-hole packages with different physical footprints and pin configurations. PCB layout and mounting requirements determine which package is appropriate for a specific application.

Q: Can I use the IXTH15N50L2 as a direct replacement for the IXTP15N50L2 on an existing PCB?

A: Direct PCB replacement is not possible without layout modification. The TO-220-3 and TO-247-3 packages have different pin spacing and mounting hole configurations. PCB redesign or adapter solutions are required for physical substitution.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXTP15N50L2 and IXTH15N50L2 are RoHS3 compliant, REACH unaffected, and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Both maintain Moisture Sensitivity Level 1 (Unlimited).

Q: What thermal characteristics do these devices share?

A: Both devices operate across the identical temperature range of -55°C to 150°C (TJ) and dissipate a maximum of 300W at the case temperature (Tc). Thermal performance is equivalent between the two package types for the specified electrical operating conditions.

Q: Are there any differences in gate drive requirements between these parts?

A: No. Both devices require identical drive voltage (10V for maximum Rds On specification) and carry the same gate threshold voltage (4.5V @ 250µA) and maximum gate voltage rating (±20V). Gate charge (123nC @ 10V) and input capacitance (4080pF @ 25V) are identical.

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