IXTP152N085T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP152N085T is an N-Channel MOSFET manufactured by IXYS in the TrenchMV™ series, rated for 85V drain-to-source voltage and 152A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 360W maximum power dissipation and operates across the temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	85	V
Continuous Drain Current (Id) @ 25°C	152	A
On-State Resistance (Rds On) @ 25A, 10V	7	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	114	nC
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP152N085T is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 85V to maintain circuit protection margins.

Current Capacity: Substitute parts must support continuous drain current (Id) at or above 152A to ensure adequate current handling without thermal stress.

On-State Resistance: Rds On values must be comparable to maintain similar power dissipation characteristics and thermal performance.

Package and Mounting: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating range.

Gate Drive Characteristics: Gate charge and threshold voltage must be compatible with existing gate drive circuitry.

The substitute parts listed below are grouped based on their ability to meet these criteria within acceptable engineering tolerances.

Parameter Comparison

Parameter	IXTP152N085T	IXTP160N10T	CSD19501KCS	CSD19531KCS	IPP80N08S406AKSA1	IRFB4310PBF	IRFB4310ZPBF
Manufacturer	IXYS	IXYS	Texas Instruments	Texas Instruments	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vdss (V)	85	100	80	100	80	100	100
Id @ 25°C (A)	152	160	100	100	80	130	120
Rds On @ 10V (mOhm)	7 @ 25A	7 @ 25A	6.6 @ 60A	7.7 @ 60A	5.8 @ 80A	7 @ 75A	6 @ 75A
Vgs(th) @ 250µA (V)	4	4.5	3.2	3.3	4	4	4
Qg @ 10V (nC)	114	132	50	38	70	250	170
Power Dissipation (W)	360	430	217	214	150	300	250
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Last Time Buy	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXTP160N10T

The IXTP160N10T from IXYS is the closest functional equivalent to the IXTP152N085T. It maintains the same manufacturer lineage (IXYS Trench series), offers higher voltage rating (100V vs. 85V), exceeds the current requirement (160A vs. 152A), and delivers superior power dissipation (430W vs. 360W). The device is in active production status, ensuring long-term availability. Rds On characteristics are identical at 7mOhm, and the operating temperature range matches exactly. This part is the preferred choice for direct replacement in new designs and ongoing production.

Secondary Substitutes: IRFB4310PBF and IRFB4310ZPBF

Both IRFB4310 variants from Infineon (HEXFET® series) provide 100V voltage rating and active product status. The IRFB4310PBF delivers 130A continuous current and 300W power dissipation, while the IRFB4310ZPBF provides 120A and 250W respectively. Both are RoHS3 compliant and support the full operating temperature range. These devices are suitable for applications where current requirements are below 152A or where thermal dissipation can be managed within their power ratings.

Alternative Substitutes: CSD19531KCS and CSD19501KCS

The Texas Instruments NexFET™ series devices (CSD19531KCS at 100V and CSD19501KCS at 80V) offer lower gate charge (38nC and 50nC respectively) compared to the original part (114nC), resulting in faster switching characteristics. Both are RoHS3 compliant and active products. However, both are rated for 100A continuous current, which is below the IXTP152N085T specification. These parts are suitable only for applications with reduced current requirements.

Limited Availability: IPP80N08S406AKSA1

The Infineon IPP80N08S406AKSA1 (OptiMOS™ series) is classified as Last Time Buy and carries automotive qualification (AEC-Q101). It provides 80V and 80A ratings with excellent Rds On performance (5.8mOhm). This device is not recommended for new designs due to end-of-life status, though it may be considered for legacy system support where automotive-grade qualification is required.

Frequently Asked Questions (FAQ)

Q: Can the IXTP160N10T directly replace the IXTP152N085T in existing designs?

A: Yes. The IXTP160N10T is pin-compatible in TO-220-3 packaging and exceeds all critical electrical specifications of the IXTP152N085T. The higher voltage rating (100V vs. 85V) and current capacity (160A vs. 152A) provide design margin. Gate drive characteristics are compatible, and thermal performance is superior. No circuit modifications are required.

Q: Why do some substitute parts have lower current ratings than the original?

A: The CSD19531KCS and CSD19501KCS from Texas Instruments are included as substitutes for applications where the full 152A current is not required. These devices offer advantages in gate charge (lower switching losses) and are in active production. Selection depends on actual circuit current requirements.

Q: What is the significance of the "Last Time Buy" status for the IPP80N08S406AKSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this product. While currently available in inventory (1040 pieces), no future production is planned. This device should not be selected for new designs requiring long-term supply continuity. It is suitable only for legacy system maintenance where automotive qualification is mandatory.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant except where not specified. The original IXTP152N085T does not specify RoHS status. All active and recommended substitutes meet current environmental compliance requirements.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The original IXTP152N085T requires 114nC at 10V. Substitutes range from 38nC (CSD19531KCS) to 250nC (IRFB4310PBF). Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive power. Higher gate charge requires more robust gate drive circuitry but may provide better noise immunity. Gate drive circuit compatibility must be verified for parts with significantly different Qg values.

Q: Can I use the IRFB4310PBF in a circuit designed for 152A continuous operation?

A: No. The IRFB4310PBF is rated for 130A continuous current, which is below the 152A specification of the original part. Using this device in a 152A application would exceed its continuous current rating and cause thermal stress and potential failure. This device is suitable only for applications with maximum continuous current below 130A.

Q: What is the thermal interface difference between TO-220-3 and TO-220AB packages?

A: Both package designations refer to the same three-lead through-hole TO-220 form factor with identical thermal and mechanical interfaces. The "AB" designation in some part numbers is a manufacturer-specific variant identifier but does not affect physical compatibility or thermal performance. All listed substitutes are mechanically and thermally interchangeable.

Q: Should I consider the IXTP160N10T over the IRFB4310PBF for new designs?

A: The IXTP160N10T is the preferred choice for new designs. It maintains the same manufacturer series as the original part, provides superior current capacity (160A vs. 130A), and delivers higher power dissipation capability (430W vs. 300W). Both are in active production, but the IXTP160N10T offers better performance headroom for demanding applications.

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