IXTP140N055T2 Equivalent & Substitute Parts

Part Overview

The IXTP140N055T2 is an N-Channel MOSFET manufactured by IXYS in the TrenchT2™ series. This device is rated for 55V drain-to-source voltage with 140A continuous drain current at 25°C and 250W maximum power dissipation. The component is housed in a TO-220-3 through-hole package and is currently in active product status with 21,300 units in stock.

Substitute parts are necessary when the primary component becomes unavailable, when design requirements demand alternative electrical characteristics, or when supply chain optimization requires evaluation of functionally equivalent alternatives from different manufacturers.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	140	A
Rds On (Max) @ 50A, 10V	5.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	82	nC
Input Capacitance (Ciss) @ 25V	4760	pF
Power Dissipation (Max)	250	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of N-Channel MOSFETs is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute device must have a Vdss rating equal to or greater than the original part. The IXTP140N055T2 operates at 55V; therefore, substitute parts with Vdss of 60V or higher are acceptable.

Current Handling Capability: The substitute must support continuous drain current (Id) at or above 140A at 25°C. Devices with lower current ratings are not suitable for direct substitution.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitute parts with Rds On values at or below 5.4 mOhm are preferred to maintain thermal performance.

Package and Mounting: All substitute parts must use TO-220-3 through-hole packaging to ensure mechanical and thermal compatibility with existing PCB designs.

Operating Temperature Range: Substitute devices must support the full operating temperature range of -55°C to 175°C.

Compliance and Status: All substitute parts must maintain RoHS3 compliance and active or equivalent product status to ensure long-term availability and regulatory conformance.

Parameter Comparison

Parameter	IXTP140N055T2	CSD18532KCS	IRFB3207ZPBF	IRFB3306PBF	PSMN4R2-60PLQ
Manufacturer	IXYS	Texas Instruments	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.
Vdss (V)	55	60	75	60	60
Id @ 25°C (A)	140	100	120	120	130
Rds On (Max) (mOhm)	5.4 @ 50A, 10V	4.2 @ 100A, 10V	4.1 @ 75A, 10V	4.2 @ 75A, 10V	3.9 @ 25A, 10V
Vgs(th) (V)	4 @ 250µA	2.2 @ 250µA	4 @ 150µA	4 @ 150µA	2.1 @ 1mA
Gate Charge (nC)	82 @ 10V	53 @ 10V	170 @ 10V	120 @ 10V	151 @ 10V
Ciss (pF)	4760 @ 25V	4680 @ 30V	6920 @ 50V	4520 @ 50V	8533 @ 25V
Power Dissipation (W)	250	250	300	230	263
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Active	Active	Active	Obsolete
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

CSD18532KCS (Texas Instruments NexFET™ Series)

The CSD18532KCS is suitable for applications where the 140A current requirement can be reduced to 100A. This device offers superior on-state resistance (4.2 mOhm) and lower gate charge (53 nC), resulting in improved switching efficiency. The 60V Vdss rating provides adequate margin above the 55V requirement. This part is in active product status with 17,078 units in stock. Selection of this device is appropriate when thermal management and switching speed are prioritized over maximum current capacity.

IRFB3207ZPBF (Infineon HEXFET® Series)

The IRFB3207ZPBF provides the highest voltage rating at 75V with 120A continuous current and 300W power dissipation. The 4.1 mOhm on-state resistance and higher power rating accommodate applications requiring additional voltage margin. This device is in active product status with 20,100 units in stock. The higher gate charge (170 nC) and input capacitance (6920 pF) require consideration in high-frequency switching applications. This part is suitable for designs where voltage headroom and thermal capacity are critical.

IRFB3306PBF (Infineon HEXFET® Series)

The IRFB3306PBF operates at 60V with 120A continuous current and 230W power dissipation. The 4.2 mOhm on-state resistance and moderate gate charge (120 nC) provide balanced performance characteristics. This device is in active product status with 25,100 units in stock, offering the highest inventory availability among active alternatives. The 230W power rating is lower than the original part; thermal design verification is necessary for high-power applications.

PSMN4R2-60PLQ (Nexperia USA Inc.)

The PSMN4R2-60PLQ operates at 60V with 130A continuous current and 263W power dissipation. This device offers the lowest on-state resistance (3.9 mOhm) and highest power rating among the substitutes. However, this part is in obsolete product status with limited inventory (3,211 units). Selection of this device is not recommended for new designs due to long-term availability concerns, although it remains suitable for legacy system maintenance where existing stock is available.

Frequently Asked Questions (FAQ)

Q: Can the CSD18532KCS replace the IXTP140N055T2 in all applications?

A: The CSD18532KCS is suitable for applications where continuous drain current does not exceed 100A. If the design requires the full 140A capability of the original part, this substitute is not appropriate. Verify actual current requirements before selection.

Q: What is the significance of the different Rds On measurement conditions across the substitute parts?

A: On-state resistance varies with drain current and gate-source voltage. Direct comparison requires normalization to identical test conditions. The IXTP140N055T2 specifies Rds On at 50A, while substitutes specify values at different currents (25A to 100A). Lower Rds On values indicate reduced conduction losses and improved efficiency, but measurement conditions must be considered when comparing thermal performance.

Q: Are all substitute parts suitable for new product designs?

A: The PSMN4R2-60PLQ is in obsolete product status and is not recommended for new designs. The CSD18532KCS, IRFB3207ZPBF, and IRFB3306PBF are all in active product status and suitable for new designs. Active status ensures manufacturer support, continued availability, and compliance with current regulatory requirements.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTP140N055T2 requires 82 nC, while the CSD18532KCS requires only 53 nC. Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge devices (IRFB3207ZPBF at 170 nC) require more drive energy and may limit switching frequency in current-limited gate driver circuits.

Q: Can I use a substitute with higher Vdss rating in a 55V application?

A: Yes. A higher Vdss rating provides additional voltage margin and does not degrade performance in lower-voltage applications. All substitute parts with 60V or 75V ratings are suitable for 55V operation. The higher voltage rating may result in slightly increased input capacitance and gate charge, which affects switching characteristics but does not prevent substitution.

Q: What is the impact of different input capacitance values?

A: Input capacitance (Ciss) affects gate charge and switching speed. The IXTP140N055T2 has 4760 pF at 25V. The PSMN4R2-60PLQ has 8533 pF at 25V, requiring more gate drive energy. Higher input capacitance increases switching losses in high-frequency applications. Gate driver circuits must provide sufficient current to charge the gate capacitance within the required switching time.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What package considerations apply to these substitutes?

A: All substitute parts use TO-220-3 through-hole packaging, ensuring mechanical and thermal compatibility with existing PCB designs. No package modifications are required for substitution. Thermal interface materials and mounting hardware remain compatible across all listed devices.

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