IXYS IXTP12N70X2M Equivalent & Substitute Parts Reference

Part Overview

The IXYS IXTP12N70X2M is an active N-Channel MOSFET in the transistors, FETs, and MOSFETs category. It features a 700 V drain-to-source voltage and 12A continuous drain current (Tc), housed in a TO-220-3 Full Pack, Isolated Tab through-hole package. As an active component with ROHS3 and REACH compliance, sourcing alternative models may be necessary for purposes such as design flexibility, cross-referencing, or supply chain assurance.

Substiute Parts

IXTP12N70X2M
IXYSIn Stock: 789IXTP12N70X2M Datasheet
IXTP12N70X2M
Current Part
STP18N65M2
STMicroelectronicsIn Stock: 2350STP18N65M2 Datasheet
STP18N65M2
Similar

Key Parameters

Parameter IXTP12N70X2M
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts are selected based strictly on the following allowed parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), package type, mounting style, operating temperature, compliance (RoHS, REACH), and moisture sensitivity level. Only models matching these requirements are included in the substitute parts list.

Parameter Comparison

Parameter IXYS IXTP12N70X2M STMicroelectronics STP18N65M2
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V 330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) 960 pF @ 25 V 770 pF @ 100 V
Power Dissipation (Max) 40W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Both IXYS IXTP12N70X2M and STMicroelectronics STP18N65M2 are active status parts, compliant with ROHS3 and unaffected by REACH. The moisture sensitivity level for both is 1 (Unlimited). Selection between these substitutes can be based on inventory availability and required regulatory compliance, as both meet the specified certification and product status criteria.

Frequently Asked Questions (FAQ)

Q1: What parameters are critical when substituting IXTP12N70X2M in MOSFET applications?
A1: Critical parameters include FET type (N-Channel), technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage, gate charge, maximum gate-source voltage, input capacitance, package type, mounting style, operating temperature, and compliance (RoHS, REACH).

Q2: Are package differences relevant between IXTP12N70X2M and STP18N65M2?
A2: Both parts use the TO-220 family; IXTP12N70X2M features an Isolated Tab version while STP18N65M2 uses the standard TO-220. Device mounting type (Through Hole) is matched.

Q3: How is compliance maintained when substituting these MOSFETs?
A3: Both parts are ROHS3 compliant, with REACH unaffected status and an MSL of 1 (Unlimited), ensuring compliance with standard environmental and handling regulations.

Q4: Why is it essential to match electrical and mechanical parameters during substitution?
A4: Matching these parameters ensures functional compatibility, electrical performance, and adherence to installation and regulatory requirements, preventing operational or compliance issues.

Q5: Can I rely solely on product status and certifications when selecting substitute MOSFETs?
A5: Product status and certifications determine availability and regulatory suitability. These substitutes are both active, ROHS3 compliant, and unaffected by REACH, fulfilling statutory requirements.

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