IXTP12N70X2 N-Channel 700V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP12N70X2 is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 700V drain-to-source voltage and 12A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 180W. This part is currently Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), and gate charge characteristics. Substitute parts may differ in packaging format, series designation, or manufacturer while maintaining functional compatibility within specified operating ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On) @ 6A, 10V	300	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	19	nC
Input Capacitance (Ciss) @ 25V	960	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the IXTP12N70X2 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Same Electrical Specifications, Different Package): Parts that maintain identical electrical characteristics (700V Vdss, 12A Id, 300mOhm Rds On, 19nC Qg) but differ in package format. These parts are direct functional replacements with no circuit redesign required.

Similar Electrical Characteristics (Comparable Performance, Different Ratings): Parts that operate within the same voltage class (600V to 800V Vdss) and current range (11A to 14A Id) with comparable on-state resistance and gate charge. These parts are suitable for applications where the exact specifications of the IXTP12N70X2 are not mandatory, provided the circuit design accommodates the parameter variations.

Critical Substitution Parameters:

Drain-to-Source Voltage (Vdss): Minimum 700V for direct equivalence; 600V-800V for similar substitutes
Continuous Drain Current (Id): Minimum 12A for direct equivalence; 11A-14A for similar substitutes
On-State Resistance (Rds On): Maximum 300mOhm for direct equivalence; up to 400mOhm for similar substitutes
Gate Charge (Qg): Maximum 19nC for direct equivalence; up to 56nC for similar substitutes
Package Type: TO-220-3 for mechanical compatibility; TO-247-3 for parametric equivalents
Operating Temperature: Minimum -55°C to 150°C
Compliance: RoHS3 and REACH requirements

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Package	Power (W)	Status
IXTP12N70X2	IXYS	700	12	300	19	TO-220-3	180	Active
IXTH12N70X2	IXYS	700	12	300	19	TO-247-3	180	Active
FCP11N60F	onsemi	600	11	380	52	TO-220-3	125	Not For New Designs
FCP400N80Z	onsemi	800	14	400	56	TO-220-3	195	Not For New Designs
FCPF11N60F	onsemi	600	11	380	52	TO-220F-3	36	Not For New Designs
STP11NM80	STMicroelectronics	800	11	400	43.6	TO-220-3	150	Active
STP13N60M2	STMicroelectronics	600	11	380	17	TO-220-3	110	Active
STP13NM60N	STMicroelectronics	600	11	360	30	TO-220-3	90	Active
STP13NM60ND	STMicroelectronics	600	11	380	24.5	TO-220-3	109	Active
STP15N60M2-EP	STMicroelectronics	600	11	378	17	TO-220-3	110	Active
STP15N65M5	STMicroelectronics	650	11	340	22	TO-220-3	125	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The IXTH12N70X2 is the direct parametric equivalent of the IXTP12N70X2, offering identical electrical specifications with the primary difference being package format (TO-247-3 versus TO-220-3). Both parts are manufactured by IXYS in the Ultra X2 series and maintain Active product status. Selection of IXTH12N70X2 is appropriate when circuit board layout requires the larger TO-247 package footprint or when thermal management benefits from the enhanced lead structure of the TO-247 format. Both parts are RoHS3 compliant and REACH unaffected.

Similar Substitute Selection for Active Products:

STMicroelectronics parts STP11NM80, STP13N60M2, STP13NM60N, STP13NM60ND, STP15N60M2-EP, and STP15N65M5 are all Active products suitable for new designs. These parts operate within compatible voltage and current ranges:

STP11NM80 (800V, 11A): Exceeds voltage rating of IXTP12N70X2 with slightly lower current rating. Suitable for applications requiring higher voltage margin with comparable current handling.
STP15N65M5 (650V, 11A): Operates at reduced voltage (650V) with improved on-state resistance (340mOhm) compared to IXTP12N70X2. Appropriate for applications with lower voltage requirements and enhanced efficiency needs.
STP13N60M2, STP13NM60N, STP13NM60ND, STP15N60M2-EP (600V, 11A): All operate at reduced voltage with comparable current ratings. These parts are suitable for applications where 600V rating is sufficient and cost optimization is a consideration.

Obsolete Product Avoidance:

onsemi parts FCP11N60F, FCP400N80Z, and FCPF11N60F are marked "Not For New Designs" and should not be selected for new circuit development. These parts are available in current inventory but are subject to discontinuation. Existing designs using these parts may continue operation, but new applications should transition to Active products.

Compliance Verification:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the IXTP12N70X2. Moisture sensitivity level (MSL) is 1 (Unlimited) for IXYS parts and not applicable for onsemi and STMicroelectronics parts, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can IXTH12N70X2 be used as a direct replacement for IXTP12N70X2 in existing designs?

A: Yes. IXTH12N70X2 is a parametric equivalent with identical electrical specifications (700V, 12A, 300mOhm Rds On, 19nC Qg). The only difference is the package format: TO-247-3 instead of TO-220-3. Circuit redesign is required only if the printed circuit board layout cannot accommodate the larger TO-247 footprint. Thermal performance and electrical behavior are equivalent.

Q: What is the minimum voltage rating required for a substitute part?

A: For direct substitution without circuit modification, the substitute part must maintain at least 700V Vdss rating. For applications where the full 700V rating is not required, parts rated at 650V or 600V may be used if the circuit design confirms that the lower voltage rating is acceptable for the intended application. Parts rated below 600V are not recommended as substitutes.

Q: Are STMicroelectronics parts suitable replacements despite lower current ratings?

A: STMicroelectronics parts such as STP13N60M2 and STP15N65M5 are rated for 11A continuous drain current, compared to 12A for the IXTP12N70X2. These parts are suitable for applications where the circuit design does not require the full 12A rating. If the application demands 12A continuous current, these parts are not appropriate substitutes. Verify circuit current requirements before selection.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The IXTP12N70X2 has 19nC gate charge. Substitute parts with higher gate charge (up to 56nC for FCP400N80Z) require longer switching times and may increase switching losses. Parts with similar or lower gate charge (such as STP13N60M2 at 17nC) provide faster switching with reduced drive circuit stress. Gate charge differences do not prevent substitution but affect circuit performance characteristics.

Q: Can onsemi FCP series parts be used in new designs?

A: No. FCP11N60F, FCP400N80Z, and FCPF11N60F are all marked "Not For New Designs." These parts are obsolete or obsolescence-pending and should not be selected for new circuit development. Existing designs using these parts may continue operation with available inventory, but new applications must transition to Active products such as STMicroelectronics or IXYS alternatives.

Q: What are the thermal considerations when selecting a substitute?

A: The IXTP12N70X2 has a maximum power dissipation of 180W. Substitute parts vary in power rating: STP11NM80 (150W), STP15N65M5 (125W), and STP13NM60N (90W). Lower power ratings indicate reduced thermal capacity. If the application dissipates power approaching the rated maximum, select a substitute with equal or higher power rating. Thermal management design (heatsinking, PCB copper area) must accommodate the selected part's power dissipation capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the IXTP12N70X2. No additional compliance verification is required when substituting between these parts.

Q: What package options are available for substitution?

A: The IXTP12N70X2 is supplied in TO-220-3 through-hole package. The parametric equivalent IXTH12N70X2 uses TO-247-3 package, which is physically larger but maintains identical electrical performance. All STMicroelectronics and most onsemi substitutes use TO-220-3 package, providing direct mechanical compatibility. FCPF11N60F uses TO-220F-3 full pack variant. Package selection depends on circuit board layout constraints and thermal management requirements.

Q: How do on-state resistance differences affect circuit performance?

A: The IXTP12N70X2 has 300mOhm Rds On at 6A, 10V. Substitute parts range from 340mOhm to 400mOhm. Higher on-state resistance increases conduction losses and heat generation. For example, STP15N65M5 at 340mOhm provides lower losses than IXTP12N70X2, while FCP400N80Z at 400mOhm increases losses. Select parts with Rds On equal to or lower than the original specification to maintain or improve efficiency. Higher Rds On values are acceptable only if circuit thermal design accommodates increased power dissipation.

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