IXTP12N65X2M N-Channel 650V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP12N65X2M is an N-Channel MOSFET manufactured by IXYS, rated for 650V drain-to-source voltage with 12A continuous drain current at 25°C. This device operates in the Ultra X2 series and is housed in a TO-220 Isolated Tab package for through-hole mounting applications. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or compatible electrical ratings (Vdss, Id, Rds(on), gate charge characteristics) and mechanical compatibility (TO-220 package family). Substitutes are necessary when the primary part is unavailable, when design flexibility is required across manufacturing sources, or when alternative thermal or performance characteristics are acceptable within application tolerances.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	650	V	Maximum rating
Continuous Drain Current (Id)	12	A	@ 25°C (Tc)
On-State Resistance (Rds(on))	300	mOhm	@ 6A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4.5	V	@ 250µA Id
Gate Charge (Qg)	17.7	nC	@ 10V Vgs
Input Capacitance (Ciss)	1100	pF	@ 25V Vds
Power Dissipation (Max)	40	W	@ Tc
Operating Temperature Range	-55 to 150	°C	Junction temperature (TJ)
Package Type	TO-220-3	—	Isolated Tab
Mounting Type	Through Hole	—	—

Substitute Part Grouping Explanation

Substitution logic for the IXTP12N65X2M is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 650V nominal (600V minimum acceptable for voltage margin compatibility)
Continuous Drain Current (Id): 12A nominal (11A minimum acceptable)
On-State Resistance (Rds(on)): 300–390 mOhm range @ 10V Vgs
Gate Charge (Qg): 17.7–45 nC @ 10V Vgs (lower values preferred for switching speed)
Package: TO-220 family (TO-220-3, TO-220FM, TO-220FP, TO-220F-3 all compatible)
Mounting: Through-hole configuration required
Operating Temperature: Minimum -55°C to 150°C junction range

Substitution Categories:

Direct Substitutes (Vdss 650V, Id 12A):

STFU18N65M2 (STMicroelectronics): 650V, 12A, 330 mOhm, TO-220FP, Active status
STF16N65M5 (STMicroelectronics): 650V, 12A, 299 mOhm, TO-220FP, Active status

Compatible Substitutes (Vdss 600V, Id 11–12A):

R6011ENX (Rohm Semiconductor): 600V, 11A, 390 mOhm, TO-220FM, Active status
STF16N60M6 (STMicroelectronics): 600V, 12A, 320 mOhm, TO-220FP, Active status
STF13NM60ND (STMicroelectronics): 600V, 11A, 380 mOhm, TO-220FP, Active status

Similar Performance Parts (Vdss 600V, Id 10.2–15A, Not For New Designs):

FCPF380N60E (onsemi): 600V, 10.2A, 380 mOhm, TO-220F-3, Not For New Designs
IPA60R380C6XKSA1 (Infineon): 600V, 10.6A, 380 mOhm, TO-220FP, Not For New Designs
R6011KNX (Rohm Semiconductor): 600V, 11A, 390 mOhm, TO-220FM, Active status
R6015ANX (Rohm Semiconductor): 600V, 15A, 300 mOhm, TO-220FM, Not For New Designs

Higher Voltage Alternative (Vdss 800V, Id 11A):

STF11NM80 (STMicroelectronics): 800V, 11A, 400 mOhm, TO-220FP, Active status

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds(on) (mOhm)	Qg (nC)	Ciss (pF)	Pd (W)	Tj Range (°C)	Package	Status
IXTP12N65X2M	IXYS	650	12	300 @ 6A	17.7 @ 10V	1100 @ 25V	40	-55 to 150	TO-220-3 Isolated Tab	Active
STFU18N65M2	STMicroelectronics	650	12	330 @ 6A	20 @ 10V	770 @ 100V	25	-55 to 150	TO-220FP	Active
STF16N65M5	STMicroelectronics	650	12	299 @ 6A	45 @ 10V	1250 @ 100V	25	-55 to 150	TO-220FP	Active
R6011ENX	Rohm Semiconductor	600	11	390 @ 3.8A	32 @ 10V	670 @ 25V	40	-55 to 150	TO-220FM	Active
STF16N60M6	STMicroelectronics	600	12	320 @ 6A	16.7 @ 10V	575 @ 100V	25	-55 to 150	TO-220FP	Active
STF13NM60ND	STMicroelectronics	600	11	380 @ 5.5A	24.5 @ 10V	845 @ 50V	25	-55 to 150	TO-220FP	Active
FCPF380N60E	onsemi	600	10.2	380 @ 5A	45 @ 10V	1770 @ 25V	31	-55 to 150	TO-220F-3	Not For New Designs
IPA60R380C6XKSA1	Infineon Technologies	600	10.6	380 @ 3.8A	32 @ 10V	700 @ 100V	31	-55 to 150	TO-220FP	Not For New Designs
R6011KNX	Rohm Semiconductor	600	11	390 @ 3.8A	22 @ 10V	740 @ 25V	53	-55 to 150	TO-220FM	Active
R6015ANX	Rohm Semiconductor	600	15	300 @ 7.5A	50 @ 10V	1700 @ 25V	77	-55 to 150	TO-220FM	Not For New Designs
STF11NM80	STMicroelectronics	800	11	400 @ 5.5A	43.6 @ 10V	1630 @ 25V	35	-65 to 150	TO-220FP	Active

Engineering Selection Recommendations

Recommended Direct Substitutes (Preferred for New Designs):

STFU18N65M2 (STMicroelectronics): Identical voltage and current ratings (650V, 12A). Rds(on) of 330 mOhm is within acceptable tolerance. Gate charge of 20 nC is slightly higher than the original 17.7 nC, resulting in marginally slower switching. Lower power dissipation (25W vs. 40W) indicates improved efficiency. Active product status and full temperature range support (-55°C to 150°C). TO-220FP package is mechanically compatible. RoHS3 compliant.
STF16N65M5 (STMicroelectronics): Exact voltage and current match (650V, 12A). Rds(on) of 299 mOhm is superior to the original 300 mOhm. Gate charge of 45 nC is significantly higher, indicating slower switching response. Lower power dissipation (25W) provides thermal advantage. Active status with full temperature range. TO-220FP package compatible. RoHS3 compliant.

Compatible Substitutes (600V Voltage Class, Active Status):

STF16N60M6 (STMicroelectronics): Rated for 600V (50V lower than original). Maintains 12A current rating. Rds(on) of 320 mOhm is acceptable. Gate charge of 16.7 nC is lower than original, enabling faster switching. Power dissipation of 25W is improved. Active status. Full temperature range. TO-220FP package. RoHS3 compliant. Suitable for applications where 600V rating provides adequate margin.
R6011ENX (Rohm Semiconductor): 600V, 11A (1A lower than original). Rds(on) of 390 mOhm is higher, resulting in increased conduction losses. Gate charge of 32 nC is higher. Power dissipation of 40W matches original. Active status. Full temperature range. TO-220FM package. RoHS3 compliant. Acceptable for current-limited applications.
STF13NM60ND (STMicroelectronics): 600V, 11A. Rds(on) of 380 mOhm is higher. Gate charge of 24.5 nC is moderate. Power dissipation of 25W is improved. Active status. Full temperature range. TO-220FP package. RoHS3 compliant.
R6011KNX (Rohm Semiconductor): 600V, 11A. Rds(on) of 390 mOhm. Gate charge of 22 nC is favorable. Power dissipation of 53W is higher than original, indicating higher thermal load. Active status. Full temperature range. TO-220FM package. RoHS3 compliant. Suitable for applications tolerating higher dissipation.

Not Recommended for New Designs (Legacy Parts):

Parts marked "Not For New Designs" include FCPF380N60E (onsemi), IPA60R380C6XKSA1 (Infineon), and R6015ANX (Rohm Semiconductor). These parts are available in inventory but should not be selected for new product development. Use only when existing designs require continuity or when inventory constraints necessitate legacy part utilization.

Higher Voltage Alternative (800V Class):

STF11NM80 (STMicroelectronics): Rated for 800V (150V higher than original). Current rating of 11A is 1A lower. Rds(on) of 400 mOhm is higher, increasing conduction losses. Gate charge of 43.6 nC is significantly higher. Power dissipation of 35W is acceptable. Active status with extended temperature range (-65°C to 150°C). TO-220FP package. RoHS3 compliant. Select this part only when higher voltage rating is required by application specification.

Compliance and Certification:

All recommended parts are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (Unlimited) for all parts, indicating no special handling requirements. All parts carry ECCN EAR99 classification and HTSUS code 8541.29.0095.

Frequently Asked Questions (FAQ)

Q1: Can I use a 600V-rated MOSFET as a substitute for the 650V IXTP12N65X2M?

A: Yes, provided the application circuit design includes adequate voltage margin. A 600V-rated device (such as STF16N60M6 or R6011ENX) can substitute the 650V original if the maximum transient voltage in the circuit does not exceed 600V. Verify circuit peak voltage specifications before substitution. For safety-critical applications, maintain the original 650V rating.

Q2: What is the impact of higher Rds(on) values in substitute parts?

A: Higher on-state resistance increases conduction losses, resulting in greater heat dissipation and reduced efficiency. For example, R6011ENX at 390 mOhm versus the original 300 mOhm represents a 30% increase in resistance. In high-current or continuous-duty applications, this may require thermal management review. Calculate power dissipation as P = I²Rds(on) to assess impact.

Q3: Why do some substitutes have lower power dissipation ratings despite similar current ratings?

A: Power dissipation ratings reflect the package thermal capability and die design, not just electrical performance. Newer process technologies (such as STMicroelectronics MDmesh™ series) achieve lower dissipation through improved die efficiency. Lower dissipation ratings indicate better thermal performance and are generally advantageous.

Q4: Are TO-220FM and TO-220FP packages mechanically interchangeable with TO-220-3 Isolated Tab?

A: All three package variants (TO-220-3, TO-220FM, TO-220FP) are mechanically compatible for through-hole mounting on standard PCB layouts. Pin pitch and hole spacing are identical. The primary difference is the tab isolation feature: the original IXTP12N65X2M has an isolated tab, while some substitutes (TO-220FM, TO-220FP) may have standard or isolated tabs. Verify tab isolation requirements in your circuit design before substitution.

Q5: Can I substitute the IXTP12N65X2M with STF11NM80 (800V, 11A)?

A: STF11NM80 is electrically compatible but represents a design trade-off. The 800V rating provides additional voltage margin, beneficial for circuits with high transient voltages. However, the 11A current rating is 1A lower, and Rds(on) of 400 mOhm is higher than the original 300 mOhm. Gate charge of 43.6 nC is significantly higher, resulting in slower switching. Use this part only when the higher voltage rating is a design requirement.

Q6: What does "Not For New Designs" status mean for parts like FCPF380N60E?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and recommends against using the part in new product designs. These parts remain available in inventory for legacy product support and repair. For new designs, select parts with "Active" status to ensure long-term availability and manufacturer support.

Q7: How do I verify gate charge compatibility when substituting MOSFETs?

A: Gate charge (Qg) determines the switching speed and driver circuit requirements. Lower Qg values enable faster switching and reduce driver power consumption. The original IXTP12N65X2M has Qg of 17.7 nC. Substitutes with Qg values between 16.7 nC and 32 nC are generally compatible. If Qg exceeds 45 nC (such as FCPF380N60E or STF16N65M5), verify that the gate driver circuit can supply sufficient current to achieve desired switching frequency.

Q8: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed in this document are RoHS3 compliant. All carry REACH Unaffected status and Moisture Sensitivity Level 1 (Unlimited), indicating no special storage or handling requirements.

Q9: Which substitute offers the best thermal performance?

A: STFU18N65M2 and STF16N60M6 both offer power dissipation of 25W, compared to the original 40W. STFU18N65M2 maintains the 650V rating with identical 12A current, making it the thermally superior direct substitute. STF16N60M6 offers comparable thermal performance but at 600V rating.

Q10: Can I use R6015ANX (15A, 600V) as a substitute for higher current applications?

A: R6015ANX is rated for 15A continuous current, providing 3A additional capacity. However, this part is marked "Not For New Designs," limiting its suitability for new product development. Additionally, Rds(on) of 300 mOhm and power dissipation of 77W indicate higher thermal load. Use only for legacy product support where the higher current rating is required and new design constraints do not apply.

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