IXTP12N65X2 Equivalent & Substitute Parts

Part Overview

The IXTP12N65X2 is an N-Channel 650V 12A MOSFET manufactured by IXYS in the Ultra X2 series. This device is packaged in TO-220-3 through-hole configuration and rated for 180W maximum power dissipation. The part is Active status and RoHS3 compliant.

Equivalent and substitute parts are identified for applications requiring alternative packaging formats, manufacturers, or where specific inventory availability necessitates component substitution while maintaining electrical and mechanical compatibility within defined parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On) @ 6A, 10V	300	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	17	nC
Input Capacitance (Ciss) @ 25V	1100	pF
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution relationships for the IXTP12N65X2 are established based on the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V or 600V (within application tolerance)
Continuous Drain Current (Id): 11A to 12A
On-State Resistance (Rds On): 300mOhm to 399mOhm
Gate Threshold Voltage (Vgs(th)): 4.1V to 5V
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole
Package Type: TO-220-3 or TO-247-3

Substitution Categories:

Parametric Equivalent (Same Electrical Performance, Different Package): IXTH12N65X2 maintains identical electrical specifications (650V, 12A, 300mOhm Rds On, 180W) with alternative TO-247-3 packaging from the same manufacturer and series.

Direct Manufacturer Substitutes (Reduced Ratings, Same Package): AOT11S60L, FCP11N60, and STP13NM60ND operate at 600V (50V lower than primary part) with 11A continuous drain current and comparable on-state resistance. These parts are suitable for applications not requiring the full 650V rating.

Similar Alternatives (Matched Voltage Class, Optimized Performance): STP15N65M5 maintains 650V rating with 11A current and improved on-state resistance characteristics (340mOhm), offering enhanced efficiency in equivalent voltage class applications.

Parameter Comparison

Parameter	IXTP12N65X2	IXTH12N65X2	AOT11S60L	FCP11N60	STP13NM60ND	STP15N65M5
Manufacturer	IXYS	IXYS	Alpha & Omega	onsemi	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	600	600	600	650
Id @ 25°C (A)	12	12	11	11	11	11
Rds On @ 10V (mOhm)	300 @ 6A	300 @ 6A	399 @ 3.8A	380 @ 5.5A	380 @ 5.5A	340 @ 5.5A
Vgs(th) @ 250µA (V)	5	5	4.1	5	5	5
Qg @ 10V (nC)	17	17	11	52	24.5	22
Ciss @ Vds (pF)	1100 @ 25V	1100 @ 25V	545 @ 100V	1490 @ 25V	845 @ 50V	810 @ 100V
Power Dissipation (W)	180	180	178	125	109	125
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-247-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Active	Not For New Designs	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance): IXTH12N65X2 is the parametric equivalent when TO-247-3 packaging is acceptable. This part maintains all electrical specifications of the IXTP12N65X2 while providing alternative thermal and mechanical mounting characteristics. Both parts are Active status and ROHS3 compliant.

For 650V Voltage Class Applications: STP15N65M5 from STMicroelectronics maintains the 650V rating with improved on-state resistance (340mOhm vs. 300mOhm) and lower gate charge (22nC vs. 17nC). This part is Active status and suitable for new designs requiring 650V operation.

For 600V Voltage Class Applications: When 600V operation is acceptable, three alternatives are available:

STP13NM60ND (STMicroelectronics, Active status) offers balanced performance with 380mOhm Rds On and 24.5nC gate charge
AOT11S60L (Alpha & Omega, Not For New Designs) provides 399mOhm Rds On with lower gate charge (11nC)
FCP11N60 (onsemi, Not For New Designs) operates at 380mOhm Rds On with higher gate charge (52nC)

Compliance Considerations: All listed substitutes maintain RoHS3 compliance and REACH unaffected status. Parts designated "Not For New Designs" (AOT11S60L, FCP11N60) are suitable for legacy system maintenance and repair applications only.

Frequently Asked Questions (FAQ)

Q: Can IXTH12N65X2 replace IXTP12N65X2 in all applications?

A: IXTH12N65X2 is a parametric equivalent with identical electrical specifications. The primary difference is packaging: IXTH12N65X2 uses TO-247-3 instead of TO-220-3. Substitution is valid when the TO-247-3 package footprint and thermal characteristics are compatible with the application's PCB layout and mounting requirements.

Q: What is the voltage difference between 650V and 600V rated parts?

A: The IXTP12N65X2 is rated for 650V maximum drain-source voltage. Substitutes rated at 600V (AOT11S60L, FCP11N60, STP13NM60ND) have a 50V lower maximum rating. These parts are suitable only for applications where the actual operating voltage does not exceed 600V. Exceeding this rating will cause device failure.

Q: Why do some substitute parts have lower power dissipation ratings?

A: Power dissipation (Ptot) is determined by die size, thermal design, and package thermal resistance. Lower ratings (109W to 125W vs. 180W) indicate reduced thermal capability. These parts are suitable for applications with lower power requirements or where thermal management is less demanding than the primary part.

Q: Are "Not For New Designs" parts acceptable for production use?

A: Parts marked "Not For New Designs" (AOT11S60L, FCP11N60) are suitable for maintenance, repair, and legacy system support. These parts should not be selected for new product development. Active status parts (IXTP12N65X2, IXTH12N65X2, STP13NM60ND, STP15N65M5) are recommended for new designs.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance determines conduction losses and heat generation. Lower Rds On values (300mOhm in IXTP12N65X2) produce less heat and higher efficiency. Higher values (399mOhm in AOT11S60L) increase power dissipation. Selection depends on the application's thermal budget and efficiency requirements.

Q: What is the significance of gate charge (Qg) in MOSFET selection?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (11nC in AOT11S60L, 17nC in IXTP12N65X2) enables faster switching with lower driver power consumption. Higher gate charge (52nC in FCP11N60) requires more driver current and may limit switching frequency in high-speed applications.

Q: Can I use a 600V part in a 650V application?

A: No. Using a 600V rated part in a 650V application exceeds the device's maximum voltage rating and will result in failure. The voltage rating must equal or exceed the maximum operating voltage in the application.

Q: What are the thermal implications of different package types?

A: TO-220-3 and TO-247-3 packages have different thermal resistance characteristics. TO-247-3 typically offers lower thermal resistance due to larger die contact area. Package selection affects heat dissipation capability and must be verified against application thermal requirements.

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