IXTP12N50PM N-Channel 500V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP12N50PM is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is classified as Active product status. The part belongs to the Polar series and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution necessity arises from inventory availability, product lifecycle transitions, or design optimization requirements while maintaining functional compatibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	6	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	500 mOhm @ 6A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1830	pF @ 25V
Power Dissipation (Max)	50	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the IXTP12N50PM is determined by strict equivalence in the following critical parameters:

Mandatory Equivalence Parameters:

Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-220-3 (through-hole mounting)
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Voltage Range (Vgs): ±30V

Functional Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Equal to or greater than 6A
Drive Voltage (Max Rds On): 10V
Maximum Gate Voltage (Vgs): ±30V

Substitute parts must satisfy all mandatory equivalence parameters. Functional compatibility allows for variations in drain current capacity, on-resistance characteristics, gate charge, and power dissipation, provided the substitute part meets or exceeds the minimum requirements of the IXTP12N50PM in these areas.

Parameter Comparison

Parameter	IXTP12N50PM (Main)	FDP7N50 (onsemi)	IRF830APBF (Vishay)	IRFB13N50APBF (Vishay)
Manufacturer	IXYS	onsemi	Vishay Siliconix	Vishay Siliconix
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V
Continuous Drain Current (Id) @ 25°C	6 A	7 A	5 A	14 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	500 mOhm @ 6A, 10V	900 mOhm @ 3.5A, 10V	1.4 Ohm @ 3A, 10V	450 mOhm @ 8.4A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5.5 V @ 250µA	5 V @ 250µA	4.5 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10V	16.6 nC @ 10V	24 nC @ 10V	81 nC @ 10V
Maximum Gate Voltage (Vgs)	±30 V	±30 V	±30 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	1830 pF @ 25V	940 pF @ 25V	620 pF @ 25V	1910 pF @ 25V
Power Dissipation (Max)	50 W	89 W	74 W	250 W
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220-3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Product Status	Active	Obsolete	Active	Active
RoHS3 Compliance	Compliant	Compliant	Compliant	Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Affected	REACH Unaffected
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Not Applicable	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IRF830APBF (Vishay Siliconix)

The IRF830APBF is an Active product with full RoHS3 compliance and MSL 1 rating. This part meets all mandatory equivalence parameters for substitution. The continuous drain current rating of 5A is below the IXTP12N50PM specification of 6A; therefore, this substitute is suitable only for applications where the actual operating current does not exceed 5A. The higher on-resistance (1.4 Ohm @ 3A, 10V) compared to the main part (500 mOhm @ 6A, 10V) results in increased power dissipation in high-current applications. REACH status is listed as Affected, requiring verification of regulatory compliance for the end application. This part is suitable for direct substitution in current-limited or lower-power circuit implementations.

IRFB13N50APBF (Vishay Siliconix)

The IRFB13N50APBF is an Active product with full RoHS3 compliance and MSL 1 rating. This part exceeds all mandatory equivalence parameters and provides superior electrical performance. The continuous drain current rating of 14A significantly exceeds the IXTP12N50PM requirement of 6A. The on-resistance of 450 mOhm @ 8.4A, 10V is lower than the main part, resulting in reduced power dissipation. Power dissipation capacity of 250W substantially exceeds the 50W rating of the IXTP12N50PM. Gate charge of 81 nC is higher than the main part, which may affect switching speed in high-frequency applications. REACH status is Unaffected. This part is suitable for direct substitution in all applications where the IXTP12N50PM is specified, with the advantage of higher current capacity and improved thermal performance.

FDP7N50 (onsemi)

The FDP7N50 is classified as Obsolete product status. Although this part meets all mandatory equivalence parameters and provides 7A continuous drain current exceeding the IXTP12N50PM specification of 6A, the Obsolete classification indicates this device is no longer in active production. The on-resistance specification of 900 mOhm @ 3.5A, 10V is higher than the main part. Power dissipation capacity of 89W exceeds the 50W rating. Gate charge of 16.6 nC is lower than the main part, providing faster switching characteristics. RoHS3 compliance and REACH Unaffected status are confirmed. Due to Obsolete product status, this part is not recommended for new designs or long-term production applications. Use is limited to legacy system maintenance or temporary supply solutions.

Frequently Asked Questions (FAQ)

Q: Can the IRF830APBF replace the IXTP12N50PM in all applications?

A: The IRF830APBF meets all mandatory equivalence parameters for package type, voltage rating, and temperature range. However, the continuous drain current rating of 5A is lower than the IXTP12N50PM specification of 6A. Substitution is valid only for applications where the actual operating current does not exceed 5A. The higher on-resistance may result in increased power dissipation at rated current levels.

Q: Why is the FDP7N50 listed as a substitute if it is Obsolete?

A: The FDP7N50 meets all mandatory electrical and mechanical equivalence parameters and is included in the substitute list based on parameter compatibility. However, Obsolete product status indicates the device is no longer in active production. This part is suitable only for legacy system maintenance or temporary supply solutions and is not recommended for new designs.

Q: Is the IRFB13N50APBF a direct replacement for the IXTP12N50PM?

A: Yes. The IRFB13N50APBF meets all mandatory equivalence parameters and exceeds the electrical performance specifications of the IXTP12N50PM. The higher continuous drain current (14A vs. 6A), lower on-resistance, and greater power dissipation capacity make this part suitable for direct substitution in all applications. The higher gate charge may affect switching speed in high-frequency circuits.

Q: What are the critical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by equivalence in the following parameters: Drain to Source Voltage (500V), FET Type (N-Channel), Technology (MOSFET Metal Oxide), Package Type (TO-220-3), Operating Temperature Range (-55°C to 150°C), and Gate Voltage Range (±30V). All substitute parts must match these parameters exactly.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (FDP7N50, IRF830APBF, and IRFB13N50APBF) are RoHS3 compliant. The main part IXTP12N50PM is also RoHS3 compliant. Compliance with RoHS3 regulations is confirmed for all parts in this substitution list.

Q: What is the difference in on-resistance between the main part and substitutes?

A: The IXTP12N50PM has an on-resistance of 500 mOhm @ 6A, 10V. The IRF830APBF has 1.4 Ohm @ 3A, 10V (higher). The IRFB13N50APBF has 450 mOhm @ 8.4A, 10V (lower). The FDP7N50 has 900 mOhm @ 3.5A, 10V (higher). Lower on-resistance results in reduced power dissipation and improved efficiency in switching applications.

Q: Can I use the IRFB13N50APBF in a circuit designed for the IXTP12N50PM without modifications?

A: Yes. The IRFB13N50APBF meets all mandatory equivalence parameters and provides superior electrical performance. No circuit modifications are required. The higher current capacity and lower on-resistance provide improved performance margins. Gate charge is higher, which may require evaluation in high-frequency switching applications to ensure driver compatibility.

Q: What is the REACH compliance status of each substitute part?

A: IXTP12N50PM: REACH Unaffected. FDP7N50: REACH Unaffected. IRF830APBF: REACH Affected. IRFB13N50APBF: REACH Unaffected. The IRF830APBF requires verification of regulatory compliance for the end application due to REACH Affected status.

Q: Are there any thermal considerations when substituting these parts?

A: Yes. Power dissipation capacity varies among substitute parts. The IXTP12N50PM is rated for 50W. The IRF830APBF is rated for 74W. The IRFB13N50APBF is rated for 250W. The FDP7N50 is rated for 89W. Higher power dissipation capacity allows for operation at higher current levels or in higher-temperature environments. Thermal management design should account for the specific power dissipation characteristics of the selected part.

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