IXTP120N075T2 Equivalent & Substitute Parts

Part Overview

The IXTP120N075T2 is an N-Channel MOSFET manufactured by IXYS in the TrenchT2™ series. This device is rated for 75V drain-to-source voltage with 120A continuous drain current at 25°C and 250W maximum power dissipation. The component is housed in a TO-220-3 through-hole package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are necessary when the primary device becomes unavailable, when design requirements demand alternative electrical characteristics within acceptable operating ranges, or when supply chain optimization requires qualified alternatives from different manufacturers. All substitute parts listed maintain compatibility with the TO-220-3 package footprint and operate within the same temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 60A, 10V	7.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	78	nC
Input Capacitance (Ciss) @ 25V	4740	pF
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP120N075T2 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating equal to or greater than 75V to ensure safe operation under maximum voltage stress conditions.

Current Capacity: Substitute parts must support continuous drain current (Id) at 25°C equal to or exceeding 120A (Tc) to maintain equivalent current-handling capability.

Package Compatibility: All substitutes must use the TO-220-3 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB designs.

Temperature Range: Operating temperature range must span -55°C to 175°C to maintain functional equivalence across the full operating envelope.

On-State Resistance: Rds On characteristics must be comparable to enable equivalent power dissipation and thermal performance in the application circuit.

Regulatory Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status to satisfy environmental and regulatory requirements.

Substitute parts are grouped into two categories based on voltage rating: parts rated at 75V (direct voltage equivalents) and parts rated below 75V (reduced voltage alternatives suitable for applications with lower voltage requirements).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Product Status
IXTP120N075T2	IXYS	75	120	7.7 @ 60A, 10V	78 @ 10V	4740 @ 25V	250	-55 to 175	Active
IRFB3307ZPBF	Infineon Technologies	75	120	5.8 @ 75A, 10V	110 @ 10V	4750 @ 50V	230	-55 to 175	Active
IRF3808PBF	Infineon Technologies	75	140	7 @ 82A, 10V	220 @ 10V	5310 @ 25V	330	-55 to 175	Active
IRFB3307PBF	Infineon Technologies	75	130	6.3 @ 75A, 10V	180 @ 10V	5150 @ 50V	200	-55 to 175	Active
FDP060AN08A0	onsemi	75	80	6 @ 80A, 10V	95 @ 10V	5150 @ 25V	255	-55 to 175	Active
DMT6005LCT	Diodes Incorporated	60	100	6 @ 20A, 10V	47.1 @ 10V	2962 @ 30V	104	-55 to 150	Active
DMT6010SCT	Diodes Incorporated	60	98	7.2 @ 20A, 10V	36.3 @ 10V	1940 @ 30V	104	-55 to 150	Active
DMTH6010SCT	Diodes Incorporated	60	100	7.2 @ 20A, 10V	36.3 @ 10V	1940 @ 30V	125	-55 to 175	Active
CSD18533KCS	Texas Instruments	60	100	6.3 @ 75A, 10V	34 @ 10V	3025 @ 30V	192	-55 to 175	Active
AUIRF3205Z	Infineon Technologies	55	75	6.5 @ 66A, 10V	110 @ 10V	3450 @ 25V	170	-55 to 175	Not For New Designs
HUF75345P3	onsemi	55	75	7 @ 75A, 10V	275 @ 20V	4000 @ 25V	325	-55 to 175	Active

Engineering Selection Recommendations

Direct Voltage Equivalents (75V Rating):

IRFB3307ZPBF is the primary direct substitute for the IXTP120N075T2. Both devices share identical 75V Vdss and 120A continuous drain current ratings. The IRFB3307ZPBF exhibits lower on-state resistance (5.8 mOhm versus 7.7 mOhm), resulting in reduced power dissipation and improved thermal performance. Both devices maintain Active product status and full RoHS3 compliance. The IRFB3307ZPBF is manufactured by Infineon Technologies and carries the HEXFET® series designation.

IRF3808PBF provides enhanced current capacity at 140A continuous drain current while maintaining the 75V voltage rating. This device is suitable for applications requiring higher current margins or where thermal headroom is critical. The IRF3808PBF is Active status with equivalent compliance certifications.

IRFB3307PBF offers 130A continuous drain current at 75V, positioning it between the primary part and the IRF3808PBF in terms of current capacity. This device is Active status and suitable for applications requiring moderate current enhancement.

FDP060AN08A0 is rated at 75V with 80A continuous drain current. This device is suitable for applications where current requirements are lower than the primary part specification. The FDP060AN08A0 is manufactured by onsemi in the PowerTrench® series and maintains Active status.

Reduced Voltage Alternatives (60V Rating):

DMT6005LCT, DMT6010SCT, DMTH6010SCT, and CSD18533KCS are rated at 60V and are suitable for applications where the maximum voltage stress does not exceed 60V. These devices support 98A to 100A continuous drain current, approaching the primary part's 120A specification. DMTH6010SCT and CSD18533KCS maintain the full -55°C to 175°C temperature range. DMT6005LCT and DMT6010SCT are limited to -55°C to 150°C. All four devices are Active status with RoHS3 compliance.

Reduced Voltage Alternatives (55V Rating):

AUIRF3205Z and HUF75345P3 are rated at 55V and support 75A continuous drain current. These devices are suitable only for applications where voltage stress does not exceed 55V. AUIRF3205Z is classified as Not For New Designs and should not be selected for new circuit designs. HUF75345P3 is Active status and manufactured by onsemi in the UltraFET™ series.

Frequently Asked Questions (FAQ)

Q: Can IRFB3307ZPBF directly replace IXTP120N075T2 in existing designs?

A: Yes. Both devices share identical 75V Vdss and 120A continuous drain current ratings, operate across -55°C to 175°C, and use the TO-220-3 package. The IRFB3307ZPBF exhibits lower on-state resistance, which improves thermal performance. No circuit modifications are required.

Q: What is the difference between 75V-rated and 60V-rated substitutes?

A: 75V-rated devices (IRFB3307ZPBF, IRF3808PBF, IRFB3307PBF, FDP060AN08A0) maintain the full voltage margin of the primary part and are suitable for all applications. 60V-rated devices (DMT6005LCT, DMT6010SCT, DMTH6010SCT, CSD18533KCS) are suitable only for applications where maximum voltage stress does not exceed 60V. Using a 60V device in a 75V application creates risk of device failure.

Q: Why is AUIRF3205Z listed as "Not For New Designs"?

A: AUIRF3205Z carries a product status designation of "Not For New Designs," indicating that Infineon Technologies does not recommend this device for new circuit development. Existing designs using this device may continue operation, but new designs should select from Active status alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements equivalent to the primary part.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values result in reduced power loss and lower junction temperatures during operation. IRFB3307ZPBF exhibits 5.8 mOhm compared to the primary part's 7.7 mOhm, providing approximately 25% lower conduction losses at equivalent current levels.

Q: Can I use a 60V-rated device in place of the 75V-rated primary part?

A: Only if the application circuit guarantees that drain-to-source voltage will not exceed 60V under any operating condition, including transient overvoltage events. If there is any possibility of 60V to 75V stress, use only 75V-rated devices to ensure reliability.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge affects switching speed and gate drive circuit requirements. Higher gate charge values require more charge transfer from the gate driver, potentially increasing switching losses and heat generation in the driver circuit. IRFB3307ZPBF exhibits 110 nC compared to the primary part's 78 nC, requiring approximately 41% more gate charge per switching cycle.

Q: Are there temperature range limitations with any substitute parts?

A: Yes. DMT6005LCT and DMT6010SCT are limited to -55°C to 150°C, compared to the primary part's -55°C to 175°C. These devices are unsuitable for applications requiring operation above 150°C. DMTH6010SCT, CSD18533KCS, and all 75V-rated alternatives maintain the full -55°C to 175°C range.

Q: What is the relationship between continuous drain current (Id) and application suitability?

A: Continuous drain current rating must equal or exceed the maximum sustained current in the application. The primary part supports 120A. Substitutes with lower ratings (FDP060AN08A0 at 80A, AUIRF3205Z and HUF75345P3 at 75A) are suitable only for applications requiring less current. Substitutes with higher ratings (IRF3808PBF at 140A, IRFB3307PBF at 130A) provide additional current margin and are suitable for all applications within the primary part's current specification.

Q: Is package compatibility guaranteed across all substitute parts?

A: Yes. All substitute parts listed use the TO-220-3 through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs. No PCB modifications are required for package compatibility.

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