IXTP120N04T2 Equivalent & Substitute Parts

Part Overview

The IXTP120N04T2 is an N-Channel MOSFET manufactured by IXYS, part of the TrenchT2™ series. This device is rated for 40V drain-to-source voltage with 120A continuous drain current at 25°C and 200W maximum power dissipation. The component is housed in a TO-220-3 through-hole package and is currently in active product status with RoHS3 compliance.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the IXTP120N04T2. Substitutes are necessary when the primary part is unavailable, when alternative manufacturers are preferred for supply chain diversity, or when design requirements allow for components with enhanced performance characteristics within the same package and voltage class.

Substiute Parts

IXTP120N04T2

IXYSIn Stock: 1342IXTP120N04T2 Datasheet

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CSD18504KCS

Texas InstrumentsIn Stock: 10569CSD18504KCS Datasheet

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IPP015N04NGXKSA1

Infineon TechnologiesIn Stock: 1552IPP015N04NGXKSA1 Datasheet

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IRF4104PBF

Infineon TechnologiesIn Stock: 10277IRF4104PBF Datasheet

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IRL1004PBF

Infineon TechnologiesIn Stock: 8133IRL1004PBF Datasheet

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PSMN1R5-40PS,127

Nexperia USA Inc.In Stock: 2489PSMN1R5-40PS,127 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP120N04T2 is determined by the following criteria:

Primary Matching Parameters:

• Drain-to-Source Voltage (Vdss): 40V (exact match required)
• FET Type: N-Channel (exact match required)
• Package Type: TO-220-3 through-hole configuration (exact match required)
• Technology: MOSFET Metal Oxide (exact match required)

Performance Parameters (Equal or Superior):

• Continuous Drain Current (Id) @ 25°C: 120A or greater
• Power Dissipation (Max): 200W or greater
• Operating Temperature Range: Must include -55°C to 175°C minimum
• On-Resistance (Rds On): Lower values indicate superior performance
• Gate Charge (Qg): Lower values indicate faster switching

Compliance Parameters:

• RoHS3 Compliance: Required
• REACH Status: Unaffected (required)
• Product Status: Active or Obsolete (both acceptable for existing inventory)

Substitute parts identified in this reference meet all primary matching parameters and maintain electrical compatibility within the specified voltage and current ratings.

Parameter Comparison

Engineering Selection Recommendations

IPP015N04NGXKSA1 (Infineon OptiMOS™)

This part is the primary recommended substitute for the IXTP120N04T2. It matches the continuous drain current specification at 120A (Tc) and exceeds power dissipation capability at 250W. The device maintains the full operating temperature range of -55°C to 175°C and is in active product status. The superior on-resistance of 1.5 mOhm at 100A provides enhanced thermal performance. RoHS3 compliance and REACH unaffected status are confirmed. The PG-TO220-3-1 package is mechanically compatible with TO-220-3 footprints.

IRL1004PBF (Infineon HEXFET®)

This part exceeds the continuous drain current specification at 130A (Tc) and maintains 200W power dissipation matching the original device. Operating temperature range is -55°C to 175°C. The device is in active product status with full RoHS3 compliance. On-resistance of 6.5 mOhm at 78A is comparable to the IXTP120N04T2. The TO-220AB package is mechanically compatible with TO-220-3 applications.

PSMN1R5-40PS,127 (Nexperia)

This part matches the continuous drain current at 120A (Tc) and significantly exceeds power dissipation at 338W. Operating temperature range is -55°C to 175°C. The device carries RoHS3 compliance and REACH unaffected status. On-resistance of 1.6 mOhm at 25A provides superior thermal characteristics. Product status is obsolete; this part is suitable only when existing inventory is available and long-term supply is not required.

CSD18504KCS (Texas Instruments NexFET™)

This part provides current capability of 100A (Tc), which is below the 120A specification of the IXTP120N04T2. Power dissipation is limited to 115W. Operating temperature range is -55°C to 150°C, which does not extend to the full 175°C upper limit. This part is suitable only for applications where the reduced current and temperature specifications are acceptable. The device is in active product status with RoHS3 compliance.

IRF4104PBF (Infineon HEXFET®)

This part provides current capability of 75A (Tc), which is below the 120A specification of the IXTP120N04T2. Power dissipation is limited to 140W. This part is suitable only for applications where the reduced current specification is acceptable. The device is in active product status with full operating temperature range of -55°C to 175°C and RoHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the CSD18504KCS be used as a direct replacement for the IXTP120N04T2?

A: The CSD18504KCS is not a direct replacement. While it shares the same 40V voltage rating and TO-220-3 package, the continuous drain current is limited to 100A (Tc) compared to 120A for the IXTP120N04T2. Additionally, the maximum operating temperature is 150°C, which does not reach the 175°C upper limit of the original device. Use this part only if your application requirements allow for reduced current and temperature specifications.

Q: What is the difference between the TO-220-3 and TO-220AB packages?

A: Both packages are through-hole mounted variants of the TO-220 family with three leads (Gate, Drain, Source). The TO-220AB and TO-220-3 designations refer to the same physical footprint and are mechanically interchangeable. Pin assignments and lead spacing are identical.

Q: Why does the IPP015N04NGXKSA1 have a much higher gate charge (250 nC) compared to the IXTP120N04T2 (58 nC)?

A: Gate charge is a function of the device's internal capacitance and the voltage applied during measurement. The IPP015N04NGXKSA1 exhibits higher input capacitance (20000 pF at 20V) compared to the IXTP120N04T2 (3240 pF at 25V). Higher gate charge results in longer switching times and increased driver power requirements. This characteristic must be evaluated in the context of your gate driver circuit design.

Q: Is the PSMN1R5-40PS,127 suitable for new designs?

A: The PSMN1R5-40PS,127 is listed as obsolete. While existing inventory may be available, this part is not recommended for new designs. Use active product alternatives such as the IPP015N04NGXKSA1 or IRL1004PBF to ensure long-term supply chain stability and manufacturer support.

Q: What are the key electrical differences between substitute parts?

A: The primary differences are on-resistance (Rds On), gate charge (Qg), and input capacitance (Ciss). Lower on-resistance reduces power dissipation during conduction. Lower gate charge enables faster switching with reduced driver power. Lower input capacitance reduces the capacitive load on the gate driver. These parameters must be evaluated against your specific circuit requirements, including switching frequency, thermal constraints, and driver capabilities.

Q: Can I use the IRF4104PBF if my application only requires 75A continuous current?

A: Yes, the IRF4104PBF is suitable for applications requiring 75A or less continuous drain current at 40V. The device maintains the full operating temperature range of -55°C to 175°C and is in active product status. However, verify that the reduced power dissipation capability of 140W is sufficient for your thermal design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed in this reference are RoHS3 compliant and have REACH unaffected status, matching the compliance profile of the IXTP120N04T2.