IXTP110N12T2 Equivalent & Substitute Parts

Part Overview

The IXTP110N12T2 is an N-Channel MOSFET manufactured by IXYS, rated for 120V drain-to-source voltage with 110A continuous drain current at 25°C. This device is part of the TrenchT2™ series and is housed in a TO-220-3 through-hole package. The component is currently classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	120	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
Rds On (Max) @ Id, Vgs	14	mOhm @ 55A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	4.5	V @ 250µA
Gate Charge (Qg) (Max)	120	nC @ 10V
Input Capacitance (Ciss) (Max)	6570	pF @ 25V
Power Dissipation (Max)	517	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTP110N12T2 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 120V
Continuous drain current (Id) must support the application requirements
On-state resistance (Rds On) must be compatible with thermal and power dissipation constraints
Gate threshold voltage (Vgs(th)) must fall within acceptable switching characteristics
Package type must be TO-220-3 through-hole configuration for mechanical compatibility
Operating temperature range must encompass -55°C to 175°C

Substitute Categories:

MFR Recommended Substitute: The IXTP80N12T2 maintains identical voltage rating (120V Vdss) and package configuration (TO-220-3) with reduced continuous drain current (80A vs. 110A). This part is from the same TrenchT2™ series and is currently in active production status.

Similar Substitute: The FDP2532 from onsemi provides higher voltage rating (150V Vdss) with comparable continuous drain current (79A Tc) in the same TO-220-3 package. This part operates within the same temperature range and uses PowerTrench® technology.

Parameter Comparison

Parameter	IXTP110N12T2	IXTP80N12T2	FDP2532	Unit
Manufacturer	IXYS	IXYS	onsemi
Drain to Source Voltage (Vdss)	120	120	150	V
Continuous Drain Current (Id) @ 25°C	110	80	79 (Tc)	A
Rds On (Max) @ Vgs 10V	14 @ 55A	17 @ 40A	16 @ 33A	mOhm
Gate Threshold Voltage (Vgs(th)) (Max)	4.5 @ 250µA	4.5 @ 100µA	4.0 @ 250µA	V
Gate Charge (Qg) (Max) @ 10V	120	80	107	nC
Input Capacitance (Ciss) (Max) @ 25V	6570	4740	5870	pF
Power Dissipation (Max)	517	325	310	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-220-3	TO-220	TO-220-3
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXTP80N12T2 Selection Criteria:

The IXTP80N12T2 is the manufacturer-recommended substitute for the obsolete IXTP110N12T2. Both devices share identical voltage rating (120V Vdss), package configuration (TO-220-3), and operating temperature range (-55°C to 175°C). The IXTP80N12T2 is currently in active production status with ROHS3 compliance and REACH unaffected designation. Selection of this part is appropriate for applications where the 80A continuous drain current rating meets or exceeds system requirements. The reduced gate charge (80 nC vs. 120 nC) and input capacitance (4740 pF vs. 6570 pF) result in lower switching losses compared to the original part.

FDP2532 Selection Criteria:

The FDP2532 from onsemi provides an alternative substitute with higher voltage rating (150V Vdss), enabling use in applications with elevated voltage margins. This part maintains comparable continuous drain current (79A Tc) and is housed in the same TO-220-3 package. The FDP2532 is in active production status with ROHS3 compliance and REACH unaffected designation. Selection of this part is appropriate for applications requiring voltage headroom beyond 120V or where onsemi device qualification is specified. The lower gate threshold voltage (4.0V vs. 4.5V) may affect switching characteristics in gate-drive-limited applications.

Product Status Consideration:

Both substitute parts are in active production status, ensuring long-term availability and supply chain continuity. The obsolete status of the IXTP110N12T2 necessitates transition to one of these active alternatives for new designs and production continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXTP80N12T2 directly replace the IXTP110N12T2 in all applications?

A: The IXTP80N12T2 is a direct mechanical and electrical substitute when the application continuous drain current requirement does not exceed 80A. Both devices share identical 120V Vdss rating, TO-220-3 package configuration, and -55°C to 175°C operating temperature range. Applications requiring continuous drain current above 80A require evaluation of the FDP2532 or circuit redesign.

Q: What are the key differences between IXTP80N12T2 and FDP2532?

A: The primary differences are voltage rating (120V vs. 150V Vdss), continuous drain current (80A vs. 79A Tc), on-state resistance characteristics (17 mOhm @ 40A vs. 16 mOhm @ 33A), and gate threshold voltage (4.5V vs. 4.0V). Both devices use the same TO-220-3 package and operate across the same temperature range. The FDP2532 provides higher voltage margin and is manufactured by onsemi using PowerTrench® technology, while the IXTP80N12T2 uses IXYS TrenchT2™ technology.

Q: Are there package compatibility concerns when substituting these parts?

A: The IXTP110N12T2 and FDP2532 both use TO-220-3 package configuration, ensuring direct mechanical compatibility. The IXTP80N12T2 uses TO-220 package, which is mechanically compatible with TO-220-3 footprints in standard through-hole applications. Verify PCB layout and thermal management provisions accommodate the substitute part's power dissipation rating.

Q: How do gate charge differences affect circuit performance?

A: The IXTP110N12T2 has 120 nC gate charge, the IXTP80N12T2 has 80 nC, and the FDP2532 has 107 nC. Lower gate charge reduces switching losses and allows faster switching transitions with equivalent gate drive circuitry. Applications with current-limited gate drivers may experience different switching speeds with the IXTP80N12T2 due to its lower gate charge requirement.

Q: What compliance certifications apply to these substitute parts?

A: All three parts (IXTP110N12T2, IXTP80N12T2, and FDP2532) are ROHS3 compliant and REACH unaffected. These certifications ensure compliance with environmental and hazardous substance regulations applicable to electronic components in regulated markets.

Q: Is the higher voltage rating of FDP2532 beneficial for all applications?

A: The 150V Vdss rating of the FDP2532 provides additional voltage margin compared to the 120V rating of the IXTP110N12T2 and IXTP80N12T2. This higher rating is beneficial in applications with voltage transients, overvoltage conditions, or where design margin is critical. However, the higher voltage rating does not improve performance in applications operating at or below 120V and may introduce unnecessary cost or component size considerations.

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