IXTP110N055T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP110N055T is an N-Channel MOSFET manufactured by IXYS, rated for 55V drain-to-source voltage with 110A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
On-State Resistance (Rds On) @ 25A, 10V	7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	67	nC
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP110N055T is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V or higher maintain adequate voltage margin for the original application.

Current Capability: Substitute parts must support continuous drain current (Id) at or above 110A (Tc) to ensure equivalent or superior current handling capacity.

Thermal Performance: Power dissipation capability must be sufficient for the thermal environment. The original part dissipates 230W (Tc); substitutes with comparable or higher power ratings are acceptable.

Package Compatibility: All substitute parts must use the TO-220-3 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)) and gate charge (Qg) should be within reasonable tolerance to maintain compatibility with existing gate drive circuits.

Temperature Range: Operating temperature range must encompass the original -55°C to 175°C specification.

Compliance Status: RoHS3 compliance and REACH unaffected status are required for regulatory alignment.

Parameter Comparison

Parameter	IXTP110N055T	CSD18533KCS	DMT6010SCT	DMTH6005LCT	IPP057N06N3GXKSA1	IPP80N06S207AKSA4	IRFB3307PBF
Manufacturer	IXYS	Texas Instruments	Diodes Incorporated	Diodes Incorporated	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vdss (V)	55	60	60	60	60	55	75
Id @ 25°C (A)	110 (Tc)	100 (Tc)	98 (Tc)	100 (Tc)	80 (Tc)	80 (Tc)	130 (Tc)
Rds On @ 10V (mOhm)	7 @ 25A	6.3 @ 75A	7.2 @ 20A	6 @ 20A	5.7 @ 80A	6.6 @ 68A	6.3 @ 75A
Vgs(th) (V)	4 @ 100µA	2.3 @ 250µA	4 @ 250µA	3 @ 250µA	4 @ 58µA	4 @ 180µA	4 @ 150µA
Qg @ 10V (nC)	67	34	36.3	47.1	82	110	180
Power Dissipation (W)	230 (Tc)	192 (Tc)	104 (Tc)	125 (Tc)	115 (Tc)	250 (Tc)	200 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Obsolete	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

CSD18533KCS (Texas Instruments): This part meets the voltage requirement at 60V and delivers 100A (Tc) continuous current, approaching the original 110A specification. The lower gate charge (34 nC) and reduced threshold voltage (2.3V) provide improved gate drive efficiency. Power dissipation of 192W (Tc) is slightly lower than the original but remains adequate for most applications. Active product status ensures long-term availability and design support. Full temperature range compatibility (-55°C to 175°C) is maintained.

DMTH6005LCT (Diodes Incorporated): This part is rated for 60V and 100A (Tc), matching the current capability of the CSD18533KCS. The 125W (Tc) power dissipation is lower than the original, but the part carries AEC-Q101 automotive qualification, indicating enhanced reliability screening. Full temperature range support (-55°C to 175°C) is provided. Active product status ensures procurement continuity.

IRFB3307PBF (Infineon Technologies): This part offers the highest current rating at 130A (Tc) and elevated voltage rating of 75V, providing substantial design margin. The 200W (Tc) power dissipation is comparable to the original. Gate charge of 180 nC is significantly higher, requiring consideration in gate drive circuit design. Active product status and full temperature range support (-55°C to 175°C) are confirmed.

Secondary Substitutes (Limited Availability or Restricted Status):

DMT6010SCT (Diodes Incorporated): Rated for 60V and 98A (Tc), this part falls slightly short of the original 110A specification. The operating temperature range extends only to 150°C, which is 25°C below the original specification. Active product status is maintained. This part is suitable only when the reduced temperature range does not conflict with application requirements.

IPP057N06N3GXKSA1 (Infineon Technologies): Rated for 60V and 80A (Tc), this part provides lower current capability than the original. Gate charge of 82 nC exceeds the original 67 nC, potentially requiring gate drive circuit adjustment. Product status is "Not For New Designs," limiting its suitability for new applications. This part is acceptable only for legacy system maintenance where design changes are restricted.

IPP80N06S207AKSA4 (Infineon Technologies): This part matches the original 55V voltage rating and provides 80A (Tc) continuous current, which is below the original 110A specification. Power dissipation of 250W (Tc) exceeds the original, but current capability is insufficient. Product status is obsolete, making this part unsuitable for new designs or long-term procurement.

Frequently Asked Questions (FAQ)

Q: Can the CSD18533KCS replace the IXTP110N055T in all applications?

A: The CSD18533KCS is suitable for applications where continuous drain current requirements do not exceed 100A (Tc). The 60V voltage rating provides adequate margin above the original 55V specification. Gate drive circuits designed for the original 4V threshold voltage require adjustment for the CSD18533KCS 2.3V threshold. Thermal design must account for the 192W (Tc) power dissipation limit.

Q: What is the significance of the gate charge difference between substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original IXTP110N055T requires 67 nC at 10V. Substitute parts with lower gate charge (such as CSD18533KCS at 34 nC) reduce gate drive power consumption and switching losses. Parts with higher gate charge (such as IRFB3307PBF at 180 nC) require more robust gate drive circuits and increase switching losses. Gate drive circuit compatibility must be verified for parts with significantly different gate charge values.

Q: Are all substitute parts mechanically compatible with the original PCB layout?

A: All listed substitute parts use the TO-220-3 through-hole package, ensuring mechanical compatibility with existing PCB layouts. Pin assignments are identical across all TO-220-3 packages. No PCB modifications are required for package compatibility.

Q: Why do some substitute parts have lower power dissipation ratings than the original?

A: Power dissipation capability depends on die size, thermal design, and package thermal resistance. Lower power dissipation ratings do not necessarily indicate inferior performance; they reflect the thermal design of each specific part. Application thermal requirements must be evaluated against the substitute part's power dissipation limit. Thermal modeling or testing may be required to confirm suitability in high-power applications.

Q: What is the impact of operating temperature range differences?

A: The original IXTP110N055T operates from -55°C to 175°C. The DMT6010SCT is limited to -55°C to 150°C, a 25°C reduction at the upper limit. Applications requiring operation above 150°C must use alternative substitutes. All other listed substitutes maintain the full -55°C to 175°C range.

Q: How does the threshold voltage difference affect circuit design?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to turn the MOSFET on. The original part specifies 4V at 100µA. The CSD18533KCS specifies 2.3V at 250µA, requiring lower gate drive voltage. The DMTH6005LCT specifies 3V at 250µA. Gate drive circuits must be verified to deliver adequate voltage margin above the substitute part's threshold voltage to ensure reliable switching.

Q: Which substitute part is recommended for new designs?

A: For new designs, the CSD18533KCS (Texas Instruments) or IRFB3307PBF (Infineon Technologies) are recommended based on active product status. The CSD18533KCS provides a close electrical match with improved gate drive efficiency. The IRFB3307PBF offers higher current and voltage ratings, providing greater design margin. Selection depends on specific application current and voltage requirements.

Q: Why is the IPP80N06S207AKSA4 listed if it is obsolete?

A: The IPP80N06S207AKSA4 is included for reference in legacy system maintenance scenarios where the original IXTP110N055T is no longer available. Its obsolete status makes it unsuitable for new designs or long-term procurement. Current capability of 80A (Tc) is insufficient for applications requiring the original 110A specification.

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