IXTP110N055P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP110N055P is an N-Channel MOSFET manufactured by IXYS in the Polar series, rated for 55V drain-to-source voltage and 110A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 390W at case temperature. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines for new designs and ongoing applications requiring component replacement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	110	A
On-State Resistance (Rds On) @ 500mA, 10V	13.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	76	nC
Input Capacitance (Ciss) @ 25V	2210	pF
Power Dissipation (Max)	390	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXTP110N055P is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 55V. Substitute parts rated at 55V or 60V are acceptable, as higher voltage ratings provide backward compatibility.

Current Capacity: The continuous drain current (Id) at 25°C must meet or exceed the application requirement. The IXTP110N055P delivers 110A; substitutes with lower current ratings (37.2A to 75A) are suitable for applications requiring reduced current capacity, while higher-rated devices provide design margin.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Substitute devices with comparable or lower Rds On values maintain equivalent or improved efficiency characteristics.

Package and Mounting: All substitute parts maintain TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility.

Operating Temperature Range: The IXTP110N055P operates from -55°C to 175°C. Substitute parts with identical or extended temperature ranges ensure thermal performance compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with similar or lower values maintain compatible drive circuit performance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Status
IXTP110N055P	IXYS	55	110	13.5	5.5	76	2210	390	-55 to 175	Obsolete
HUF75339P3	onsemi	55	75	12	4	130	2000	200	-55 to 175	Active
IRFZ44ZPBF	Infineon	55	51	13.9	4	43	1420	80	-55 to 175	Not For New Designs
IRFZ48NPBF	Infineon	55	64	14	4	81	1970	130	-55 to 175	Active
CSD18537NKCS	Texas Instruments	60	50	14	3.5	18	1480	94	-55 to 150	Active
DMT6009LCT	Diodes Incorporated	60	37.2	12	2	33.5	1925	25	-55 to 150	Active
IRFB3806PBF	Infineon	60	43	15.8	4	30	1150	71	-55 to 175	Active
IRFZ44VZPBF	Infineon	60	57	12	4	65	1690	92	-55 to 175	Not For New Designs
RFP70N06	onsemi	60	70	14	4	156	2250	150	-55 to 175	Active
STP60NF06L	STMicroelectronics	60	60	14	1	66	2000	110	-65 to 175	Active

Engineering Selection Recommendations

Primary Recommendation for New Designs: HUF75339P3 (onsemi)

The HUF75339P3 is an active product with identical 55V voltage rating and -55°C to 175°C operating temperature range matching the IXTP110N055P. With 75A continuous drain current and 12mOhm on-state resistance, this device provides suitable performance for applications requiring reduced current capacity from the original 110A specification. The part is RoHS3 compliant and carries full active product status, ensuring long-term availability and supply chain stability.

Alternative for Extended Temperature Range: STP60NF06L (STMicroelectronics)

The STP60NF06L extends the lower operating temperature to -65°C while maintaining 175°C upper limit. With 60V voltage rating and 60A continuous drain current, this device accommodates applications with moderate current requirements. The part is active and RoHS3 compliant with STripFET™ II technology.

Alternative for Higher Current Capacity: RFP70N06 (onsemi)

The RFP70N06 provides 70A continuous drain current at 60V rating, offering intermediate current capacity between lower-rated alternatives and the original 110A specification. This device is active, RoHS3 compliant, and maintains the full -55°C to 175°C temperature range.

Alternatives for Reduced Power Dissipation Applications: IRFB3806PBF or CSD18537NKCS

For applications with lower power dissipation requirements, the IRFB3806PBF (43A, 60V) or CSD18537NKCS (50A, 60V) provide suitable alternatives. Both are active products with RoHS3 compliance. The IRFB3806PBF maintains the full -55°C to 175°C temperature range, while CSD18537NKCS operates to 150°C.

Parts Not Recommended for New Designs: IRFZ44ZPBF and IRFZ44VZPBF

Both Infineon IRFZ44 variants carry "Not For New Designs" status and should not be selected for new applications, despite electrical compatibility. These parts remain available for legacy system maintenance only.

Frequently Asked Questions (FAQ)

Q: Can the HUF75339P3 directly replace the IXTP110N055P in all applications?

A: The HUF75339P3 is electrically compatible for applications where 75A continuous drain current meets system requirements. If the original design requires the full 110A capacity of the IXTP110N055P, the HUF75339P3 is not suitable. Verify application current requirements before substitution.

Q: What is the significance of the "Not For New Designs" status on IRFZ44 variants?

A: Parts marked "Not For New Designs" are in mature or declining production phases. While electrically functional, these devices should not be selected for new product development. They remain available for replacement in existing systems. For new designs, select from active product status alternatives.

Q: Are 60V-rated devices acceptable substitutes for the 55V IXTP110N055P?

A: Yes. A higher voltage rating provides backward compatibility. Devices rated 60V can operate safely in 55V applications. The higher voltage rating does not degrade performance in lower-voltage circuits.

Q: How does on-state resistance (Rds On) affect substitution decisions?

A: Lower Rds On values reduce power dissipation and heat generation. Substitute devices with equal or lower Rds On values maintain or improve thermal performance. Higher Rds On values increase power dissipation and may require enhanced thermal management.

Q: Does the TO-220-3 package ensure mechanical compatibility?

A: Yes. All substitute parts listed use TO-220-3 through-hole packaging, ensuring identical mechanical fit, pin configuration, and thermal interface compatibility with the original IXTP110N055P.

Q: What is the impact of gate charge (Qg) differences on gate drive circuits?

A: Gate charge affects switching speed and gate drive power requirements. Substitute devices with lower gate charge values reduce gate drive current demands. Devices with higher gate charge may require gate drive circuit verification to ensure adequate drive capability.

Q: Are there compliance differences between substitute parts?

A: All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the compliance status of the IXTP110N055P. Moisture sensitivity levels vary; verify MSL requirements for your specific assembly and storage conditions.

Q: Can I use a lower-current-rated device if my application does not require 110A?

A: Yes, provided the selected substitute device's continuous drain current rating exceeds the maximum current your application draws. Always select a device with current capacity equal to or greater than application requirements.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both designations refer to the same three-lead through-hole package format. TO-220-3 and TO-220AB are equivalent package types with identical pin configuration and mechanical dimensions.

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