IXTP10N60P N-Channel 600V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP10N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 10A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part is currently Active in product status with 1110 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package type and thermal operating window. Alternative models may be required due to component availability, supply chain considerations, or design optimization needs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10	A
On-State Resistance (Rds On) @ 5A, 10V	740	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	32	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP10N60P is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal 600V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package/Case: Must be TO-220-3
Mounting Type: Must be Through Hole
Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 10A @ 25°C
On-State Resistance (Rds On): Lower or equivalent values are acceptable
Gate Threshold Voltage (Vgs(th)): Must be within ±30V maximum gate voltage specification
Power Dissipation: Substitute must support thermal requirements of the application
RoHS3 Compliance: Required for regulatory compatibility

The substitute parts identified below meet all primary matching criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	IXTP10N60P (Main)	AOT10N60	STP10N60M2	STP10NK60Z	STP9N60M2
Manufacturer	IXYS	Alpha & Omega Semiconductor	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600
Id @ 25°C (A)	10	10	7.5	10	5.5
Rds On @ 10V (mOhm)	740 @ 5A	750 @ 5A	600 @ 3A	750 @ 4.5A	780 @ 3A
Vgs(th) @ 250µA (V)	5.5	4.5	4	4.5	4
Gate Charge @ 10V (nC)	32	40	13.5	70	10
Ciss @ 25V (pF)	1610	1600	400	1370	320
Power Dissipation (W)	200	250	85	115	60
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Not For New Designs	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

AOT10N60 (Alpha & Omega Semiconductor)

The AOT10N60 provides electrical equivalence to the IXTP10N60P with matching 600V/10A ratings and identical operating temperature range. This device features 250W power dissipation, exceeding the main part's 200W specification. However, the AOT10N60 carries a "Not For New Designs" product status, indicating it is in end-of-life phase. This part is suitable only for replacement or maintenance applications where existing designs require direct substitution. New designs should not incorporate this device.

STP10NK60Z (STMicroelectronics SuperMESH™)

The STP10NK60Z matches the IXTP10N60P in Vdss (600V) and Id (10A) ratings with Active product status. This device exhibits equivalent on-state resistance (750mOhm) and operates across the full -55°C to 150°C temperature range. The STP10NK60Z is suitable for direct substitution in applications where the 115W power dissipation is adequate. This part is recommended for new designs requiring 600V/10A performance.

STP10N60M2 (STMicroelectronics MDmesh™ II Plus)

The STP10N60M2 is rated for 7.5A continuous drain current, below the IXTP10N60P's 10A specification. This device features superior on-state resistance (600mOhm @ 3A) and lower gate charge (13.5nC), resulting in reduced switching losses. The STP10N60M2 is suitable only for applications where the 7.5A current rating is sufficient. Power dissipation is limited to 85W. This part is not a direct equivalent but may be used in current-limited applications.

STP9N60M2 (STMicroelectronics MDmesh™ II Plus)

The STP9N60M2 is rated for 5.5A continuous drain current, significantly below the IXTP10N60P's 10A specification. This device features the lowest gate charge (10nC) and reduced input capacitance (320pF), optimizing for high-frequency switching applications. Power dissipation is limited to 60W. This part is not a direct equivalent and is suitable only for applications with reduced current requirements.

Recommendation Summary:

For direct substitution with equivalent electrical performance, use STP10NK60Z (Active status, 10A rating, 600V Vdss). For end-of-life replacement only, AOT10N60 is available. For current-limited applications, STP10N60M2 and STP9N60M2 offer optimized switching characteristics but reduced current capacity.

Frequently Asked Questions (FAQ)

Q: Can the AOT10N60 be used in new product designs?

A: No. The AOT10N60 carries "Not For New Designs" product status, indicating end-of-life phase. This part is restricted to replacement and maintenance applications only. New designs must use Active-status alternatives such as STP10NK60Z.

Q: What is the primary difference between IXTP10N60P and STP10NK60Z?

A: Both devices share identical Vdss (600V) and Id (10A) ratings with equivalent on-state resistance (740mOhm vs. 750mOhm). The primary difference is power dissipation: IXTP10N60P supports 200W while STP10NK60Z supports 115W. Both operate across -55°C to 150°C and are packaged in TO-220-3. STP10NK60Z is recommended for new designs.

Q: Why do STP10N60M2 and STP9N60M2 have lower current ratings?

A: STP10N60M2 is rated for 7.5A and STP9N60M2 for 5.5A continuous drain current, both below the IXTP10N60P's 10A specification. These devices are optimized for reduced power dissipation and lower gate charge, making them suitable for high-frequency switching applications with lower current requirements. They are not direct equivalents for 10A applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts (AOT10N60, STP10NK60Z, STP10N60M2, STP9N60M2) are RoHS3 compliant and REACH unaffected, matching the IXTP10N60P's regulatory status.

Q: Can I use a substitute part with lower power dissipation rating?

A: Substitution with lower power dissipation is acceptable only if the application's thermal requirements do not exceed the substitute part's rating. For example, STP10NK60Z (115W) can replace IXTP10N60P (200W) in applications dissipating less than 115W. Verify thermal design margins before substitution.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (STP10N60M2: 13.5nC, STP9N60M2: 10nC) enables faster switching and reduced driver power consumption compared to higher values (IXTP10N60P: 32nC, STP10NK60Z: 70nC). Substitute parts with significantly different gate charge may require driver circuit optimization.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts are packaged in TO-220-3 through-hole configuration, matching the IXTP10N60P. This ensures mechanical and thermal interface compatibility without PCB redesign.

Q: What is the operating temperature range for all parts?

A: All parts operate across -55°C to 150°C junction temperature range, with the exception of STP9N60M2 which specifies 150°C maximum (no lower limit provided in data). Verify specific application temperature requirements before substitution.

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