IXTM67N10 Equivalent & Substitute Parts

Part Overview

The IXTM67N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 67A continuous drain current at 25°C. This device is part of the GigaMOS™ series and features a TO-204AE through-hole package. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating potential package differences in board-level integration.

Substiute Parts

IXTM67N10

IXYSIn Stock: 2222IXTM67N10 Datasheet

Current PartRFQ

PSMN013-100PS,127

Nexperia USA Inc.In Stock: 4294PSMN013-100PS,127 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTM67N10 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous Drain Current (Id) must equal or exceed 67A at 25°C
• Gate-Source Voltage (Vgs) rating must accommodate ±20V operation
• On-state resistance (Rds On) must not degrade circuit performance below acceptable thresholds
• Gate Charge (Qg) and Input Capacitance (Ciss) affect switching characteristics and must remain within acceptable ranges

Thermal and Mechanical Criteria:

• Power Dissipation capability must support 300W or greater thermal handling
• Operating temperature range must encompass -55°C to 150°C minimum
• Mounting type must be through-hole compatible
• Package footprint must accommodate board-level integration requirements

The PSMN013-100PS,127 from Nexperia USA Inc. meets these substitution criteria with equivalent voltage rating (100V), comparable continuous drain current (68A), and compatible through-hole mounting (TO-220AB package). Both devices are RoHS3 compliant and maintain REACH unaffected status.

Parameter Comparison

Engineering Selection Recommendations

Compliance and Regulatory Alignment: Both the IXTM67N10 and PSMN013-100PS,127 maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility for applications subject to environmental and hazardous substance restrictions.

Electrical Performance: The PSMN013-100PS,127 provides equivalent voltage rating (100V) and comparable continuous drain current (68A versus 67A). The substitute exhibits lower on-state resistance (13.9 mOhm at 15A versus 25 mOhm at 33.5A) and significantly reduced gate charge (59 nC versus 260 nC), resulting in improved switching efficiency and reduced gate drive requirements.

Thermal Considerations: The IXTM67N10 supports 300W power dissipation, while the PSMN013-100PS,127 is rated for 170W. Applications requiring the full 300W thermal capability of the original device must evaluate whether the substitute's thermal rating is sufficient for the intended circuit. The PSMN013-100PS,127 operates across an extended temperature range (-55°C to 175°C versus -55°C to 150°C), providing additional margin in high-temperature environments.

Package Integration: The IXTM67N10 uses TO-204AE packaging, while the PSMN013-100PS,127 uses TO-220AB packaging. Both are through-hole mount types, but physical footprint differences require PCB layout verification before implementation.

Product Status: Both devices are classified as obsolete. Long-term availability should be confirmed with component distributors prior to design commitment.

Frequently Asked Questions (FAQ)

Q: Can the PSMN013-100PS,127 directly replace the IXTM67N10 in all applications?

A: Electrical substitution is valid for applications where power dissipation does not exceed 170W. The PSMN013-100PS,127 meets or exceeds the voltage and current specifications of the IXTM67N10. However, PCB layout modifications are required due to package differences (TO-204AE versus TO-220AB). Verify thermal requirements and gate drive compatibility before implementation.

Q: What are the key differences in switching characteristics?

A: The PSMN013-100PS,127 exhibits significantly lower gate charge (59 nC versus 260 nC) and reduced input capacitance (3195 pF versus 4500 pF). These differences result in faster switching transitions and lower gate drive power consumption. Applications with tight switching timing requirements should evaluate whether these differences improve or degrade performance.

Q: Are there thermal management implications?

A: The IXTM67N10 supports 300W dissipation while the PSMN013-100PS,127 is rated for 170W. For applications operating near or above 170W, the substitute may require enhanced thermal management (heat sinking, forced convection) or may be unsuitable. Thermal analysis of the specific application circuit is required.

Q: How do package differences affect board design?

A: The IXTM67N10 uses TO-204AE packaging while the PSMN013-100PS,127 uses TO-220AB. These packages have different pin configurations, lead spacing, and mounting footprints. PCB redesign is necessary to accommodate the substitute package. Verify mechanical clearance and thermal interface requirements for the new package.

Q: Are both devices suitable for new designs?

A: Both devices are classified as obsolete. For new designs, evaluation of current-generation N-Channel MOSFETs with 100V rating and comparable current ratings is recommended. Obsolete status indicates limited future availability and potential supply chain constraints.

Q: What compliance certifications apply to both devices?

A: Both the IXTM67N10 and PSMN013-100PS,127 are RoHS3 compliant and REACH unaffected. Both carry ECCN classification EAR99 and HTSUS code 8541.29.0095. Moisture sensitivity level is 1 (Unlimited) for both devices, indicating no special moisture handling requirements during storage or assembly.