IXTM5N100A N-Channel MOSFET 1000V 5A Equivalent & Substitute Parts

Part Overview

The IXTM5N100A is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 5A continuous drain current at 25°C. This device is packaged in a TO-204AA (TO-3) through-hole configuration and is designed for high-voltage switching applications requiring 180W maximum power dissipation. The IXTM5N100A is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	5	A
On-State Resistance (Rds On Max) @ Id, Vgs	2	Ω @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	130	nC @ 10V
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-204AA (TO-3)	Through Hole
Input Capacitance (Ciss Max) @ Vds	2600	pF @ 25V
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXTM5N100A is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: The substitute part must maintain the 1000V Vdss rating to ensure safe operation in the same circuit topology without risk of overstress.

Current Capability: The substitute part must support a continuous drain current rating equal to or greater than 5A at 25°C to handle the same load conditions.

On-State Resistance: The Rds On specification must remain at or below 2Ω to maintain equivalent switching losses and thermal performance.

Gate Threshold Voltage: The Vgs(th) must remain within the specified range to ensure compatible gate drive requirements.

Power Dissipation: The substitute must support at least 180W maximum power dissipation to handle equivalent thermal loads.

Package Compatibility: The substitute must be a through-hole device compatible with TO-3 or equivalent footprints, or require documented PCB layout modifications.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range.

Compliance Status: The substitute must maintain RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Parameter	IXTM5N100A (Main Part)	IRFPG50PBF (Substitute)	Compatibility
Manufacturer	IXYS	Vishay Siliconix	Different manufacturer
FET Type	N-Channel	N-Channel	Equivalent
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Equivalent
Drain-to-Source Voltage (Vdss)	1000 V	1000 V	Equivalent
Continuous Drain Current (Id) @ 25°C	5 A	6.1 A	Substitute exceeds requirement
On-State Resistance (Rds On Max) @ Id, Vgs	2 Ω @ 2.5A, 10V	2 Ω @ 3.6A, 10V	Equivalent at specified conditions
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 V @ 250µA	4 V @ 250µA	Substitute lower threshold
Gate Charge (Qg Max) @ Vgs	130 nC @ 10V	190 nC @ 10V	Substitute higher gate charge
Power Dissipation (Max)	180 W	190 W	Substitute exceeds requirement
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package Type	TO-204AA (TO-3)	TO-247AC (TO-247-3)	Different package footprint
Input Capacitance (Ciss Max) @ Vds	2600 pF @ 25V	2800 pF @ 25V	Substitute slightly higher
Gate Voltage (Vgs Max)	±20 V	±20 V	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
REACH Status	REACH Unaffected	REACH Unaffected	Equivalent
Product Status	Obsolete	Active	Substitute actively manufactured

Engineering Selection Recommendations

The IRFPG50PBF from Vishay Siliconix is a functional substitute for the obsolete IXTM5N100A based on electrical parameter equivalence across voltage rating, current capability, and on-state resistance specifications. Both devices maintain identical 1000V Vdss ratings and -55°C to 150°C operating temperature ranges, with RoHS3 compliance and REACH unaffected status.

The IRFPG50PBF provides superior current handling at 6.1A continuous drain current compared to the 5A rating of the IXTM5N100A, and offers 190W maximum power dissipation versus 180W, providing design margin in high-current applications.

The primary consideration for substitution is package footprint compatibility. The IXTM5N100A uses a TO-204AA (TO-3) through-hole package, while the IRFPG50PBF uses a TO-247AC (TO-247-3) through-hole package. These packages have different pin configurations and physical dimensions, requiring PCB layout modifications and potential mechanical redesign of mounting hardware.

The IRFPG50PBF exhibits a lower gate threshold voltage (4V versus 4.5V) and higher gate charge (190nC versus 130nC), which may require gate drive circuit evaluation to ensure compatibility with existing driver circuits. The slightly higher input capacitance (2800pF versus 2600pF) should be assessed in high-frequency switching applications.

Selection of the IRFPG50PBF is appropriate for new designs and production continuity where PCB layout modifications are feasible. For applications requiring identical TO-204AA package compatibility, alternative sources or custom packaging solutions must be evaluated.

Frequently Asked Questions (FAQ)

Q: Can the IRFPG50PBF directly replace the IXTM5N100A without PCB modifications?

A: No. The IXTM5N100A uses a TO-204AA (TO-3) package while the IRFPG50PBF uses a TO-247AC (TO-247-3) package. These packages have different pin layouts, spacing, and physical dimensions. PCB layout modifications and potential changes to mounting hardware are required.

Q: Are the electrical specifications compatible between these two devices?

A: The devices are electrically compatible across critical parameters. Both maintain 1000V Vdss ratings, support the required current levels, and provide equivalent on-state resistance. The IRFPG50PBF exceeds the current and power dissipation requirements of the IXTM5N100A, providing design margin.

Q: Will the gate drive circuit require changes when substituting the IRFPG50PBF?

A: The gate threshold voltage differs slightly (4V for IRFPG50PBF versus 4.5V for IXTM5N100A), and gate charge is higher (190nC versus 130nC). Existing gate drive circuits should be evaluated to confirm adequate drive capability. In most standard gate driver applications, compatibility is maintained, but high-frequency or marginal drive circuits may require adjustment.

Q: What is the impact of higher gate charge on switching performance?

A: Higher gate charge (190nC versus 130nC) increases the time required to charge the gate capacitance during switching transitions. This results in slightly longer switching times and potentially higher switching losses. The impact is application-dependent and most significant in high-frequency switching circuits. Standard industrial switching applications typically accommodate this difference without performance degradation.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXTM5N100A and IRFPG50PBF are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Why is the IXTM5N100A classified as obsolete?

A: The IXTM5N100A is no longer manufactured by IXYS. Obsolete status indicates end-of-life for the product line. The IRFPG50PBF is actively manufactured by Vishay Siliconix, ensuring long-term availability and supply chain continuity.

Q: Can the IRFPG50PBF be used in existing circuit designs without re-qualification?

A: Electrical substitution is valid based on parameter equivalence. However, PCB layout changes and potential gate drive circuit modifications require design review and testing. Full re-qualification is recommended for safety-critical applications.

Q: What is the difference in input capacitance between these devices?

A: The IRFPG50PBF has 2800pF input capacitance versus 2600pF for the IXTM5N100A. This 200pF difference is approximately 7.7% higher and may affect gate drive timing in high-frequency applications. Standard gate drivers accommodate this variation without modification.

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