IXTM5N100 Equivalent & Substitute Parts

Part Overview

The IXTM5N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 5A continuous drain current at 25°C. Manufactured by IXYS in a TO-204AA through-hole package, this device is designed for high-voltage switching applications requiring 180W maximum power dissipation. The IXTM5N100 is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

IXTM5N100

IXYSIn Stock: 752IXTM5N100 Datasheet

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IRFPG50PBF

Vishay SiliconixIn Stock: 3298IRFPG50PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTM5N100 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 1000V
• Continuous Drain Current (Id) must meet or exceed 5A at 25°C
• On-State Resistance (Rds On) must not exceed the maximum specified value to ensure thermal performance
• Gate Threshold Voltage (Vgs(th)) must fall within acceptable switching characteristics
• Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with existing gate drive circuitry
• Maximum Gate Voltage (Vgs Max) must support ±20V operation
• Power Dissipation capability must support the application thermal requirements
• Operating Temperature Range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting type must be through-hole
• Package footprint must be compatible with existing PCB layouts or acceptable with minor modifications

The IRFPG50PBF meets these substitution criteria through equivalent or superior electrical ratings and compatible through-hole mounting, despite packaging in TO-247AC rather than TO-204AA.

Parameter Comparison

Engineering Selection Recommendations

IRFPG50PBF as Primary Substitute:

The IRFPG50PBF is suitable as a substitute for the obsolete IXTM5N100 based on the following factors:

1. Electrical Equivalence: The IRFPG50PBF meets or exceeds all critical electrical parameters. Drain-to-source voltage is identical at 1000V. Continuous drain current is superior at 6.1A versus 5A. On-state resistance is lower at 2Ω compared to 2.4Ω, providing improved thermal performance. Gate threshold voltage is comparable at 4V versus 4.5V. Maximum gate voltage remains ±20V, ensuring compatibility with existing gate drive circuits.

2. Thermal Performance: Power dissipation capability is marginally higher at 190W versus 180W, supporting equivalent or slightly enhanced thermal headroom.

3. Operating Temperature: Both devices operate across the identical temperature range of -55°C to 150°C, ensuring thermal compatibility in all application environments.

4. Regulatory Compliance: The IRFPG50PBF maintains ROHS3 compliance, REACH unaffected status, and MSL 1 rating, matching the compliance profile of the original part.

5. Product Status: The IRFPG50PBF is active in production, ensuring long-term availability and supply chain stability compared to the obsolete IXTM5N100.

Package Consideration:

The primary design consideration is the package transition from TO-204AA to TO-247-3. Both are through-hole packages with different mechanical footprints. PCB layout modification is required to accommodate the TO-247-3 package. Pin configuration and functional equivalence are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IRFPG50PBF directly replace the IXTM5N100 without circuit modification?

A: Electrical substitution is direct. The IRFPG50PBF provides equivalent or superior electrical performance across all specified parameters. However, PCB layout modification is required due to the package change from TO-204AA to TO-247-3. Pin functionality remains identical.

Q: What is the impact of the higher gate charge (190 nC vs. 130 nC) on gate drive circuitry?

A: The IRFPG50PBF requires 60 nC additional gate charge. Gate drive circuits must supply sufficient current to charge this capacitance within the required switching time. Existing gate drive designs should be evaluated for current capability. Higher gate charge may result in slightly increased switching losses if gate drive current is limited.

Q: Are there thermal performance differences between these devices?

A: The IRFPG50PBF exhibits lower on-state resistance (2Ω vs. 2.4Ω) and higher power dissipation rating (190W vs. 180W), resulting in improved thermal performance. At equivalent current levels, the IRFPG50PBF generates less heat, reducing thermal management requirements.

Q: Is the TO-247-3 package suitable for the original application?

A: The TO-247-3 package is a standard through-hole package with superior thermal characteristics compared to TO-204AA. It is suitable for high-power applications. PCB layout must be modified to accommodate the different pin spacing and mechanical dimensions. Thermal interface design may be improved due to the larger package footprint.

Q: What is the significance of the higher input capacitance (2800 pF vs. 2600 pF)?

A: The 200 pF increase in input capacitance is within typical device variation and does not significantly impact circuit performance. Gate drive circuits designed for the IXTM5N100 will operate with the IRFPG50PBF without modification. Switching speed may be marginally affected due to the slightly higher capacitive load.

Q: Are both devices RoHS and REACH compliant?

A: Both the IXTM5N100 and IRFPG50PBF are ROHS3 compliant and REACH unaffected. Regulatory compliance is maintained in the substitution. Both devices carry MSL 1 rating, indicating unlimited moisture sensitivity protection.

Q: Why is the IXTM5N100 obsolete?

A: The IXTM5N100 is classified as obsolete by the manufacturer. The IRFPG50PBF represents the current-generation equivalent from an alternative manufacturer, offering improved availability and long-term supply chain support.