IXTM50N20 Equivalent & Substitute Parts

Part Overview

The IXTM50N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 50A continuous drain current and 300W power dissipation. Manufactured by IXYS in the GigaMOS™ series, this device is packaged in a TO-204AE through-hole configuration. The part is currently obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new designs requiring similar electrical performance characteristics.

Substiute Parts

IXTM50N20
IXYSIn Stock: 2143IXTM50N20 Datasheet
IXTM50N20
Current Part
IRFP260NPBF
Infineon TechnologiesIn Stock: 65404IRFP260NPBF Datasheet
IRFP260NPBF
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Key Parameters

Parameter Value Condition
Drain-to-Source Voltage (Vdss) 200 V Maximum rating
Continuous Drain Current (Id) 50 A @ 25°C (Tc)
Power Dissipation (Max) 300 W @ Tc
On-State Resistance (Rds On) 45 mOhm @ 25A, 10V
Gate-Source Voltage (Vgs) ±20 V Maximum rating
Operating Temperature Range -55°C to 150°C Junction temperature (TJ)
Package Type TO-204AE Through-hole

Substitute Part Grouping Explanation

Substitution of the IXTM50N20 is determined by equivalence across the following critical electrical parameters:

Electrical Equivalence Criteria:

  • Drain-to-Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id): 50 A @ 25°C
  • Power Dissipation: 300 W @ Tc
  • Gate-Source Voltage (Vgs): ±20 V maximum
  • Operating Temperature Range: Minimum -55°C to 150°C

Mechanical Compatibility Considerations:

  • Through-hole mounting requirement
  • Package footprint compatibility (TO-204AE or equivalent TO-247 variants)

The IRFP260NPBF meets all electrical equivalence criteria with identical Vdss, Id, and power dissipation ratings. The primary distinction is the package format: IRFP260NPBF uses TO-247AC instead of TO-204AE, requiring PCB layout modification. Both devices are N-Channel MOSFETs with compatible gate drive requirements and thermal characteristics.

Parameter Comparison

Parameter IXTM50N20 IRFP260NPBF Unit Notes
Manufacturer IXYS Infineon Technologies Different manufacturers
FET Type N-Channel N-Channel Identical
Vdss (Max) 200 200 V Identical
Id @ 25°C 50 50 A (Tc) Identical
Rds On (Max) 45 40 mOhm IRFP260NPBF lower (better)
Power Dissipation (Max) 300 300 W (Tc) Identical
Vgs (Max) ±20 ±20 V Identical
Operating Temperature -55 to 150 -55 to 175 °C (TJ) IRFP260NPBF higher upper limit
Package TO-204AE TO-247AC Different footprints
Product Status Obsolete Active IRFP260NPBF in production
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical

Engineering Selection Recommendations

IRFP260NPBF as Primary Substitute:

The IRFP260NPBF is the direct electrical equivalent for the obsolete IXTM50N20. Both devices share identical voltage and current ratings (200V, 50A) with matching power dissipation (300W). The IRFP260NPBF offers improved on-state resistance (40 mOhm versus 45 mOhm), resulting in lower conduction losses and reduced thermal stress during operation.

Product Status Advantage:

The IRFP260NPBF maintains active production status with Infineon Technologies, ensuring long-term availability and supply chain continuity. The IXTM50N20, classified as obsolete, presents procurement risk and limited inventory access.

Compliance Alignment:

Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent applications. No compliance barriers exist for substitution.

Package Consideration:

The transition from TO-204AE to TO-247AC requires PCB layout modification. The TO-247AC package provides superior thermal performance through enhanced lead geometry, supporting the identical 300W power dissipation rating with improved heat dissipation characteristics. This package change is mechanical only and does not affect electrical functionality.

Temperature Performance:

The IRFP260NPBF extends the maximum operating temperature to 175°C (versus 150°C for IXTM50N20), providing additional thermal margin in high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP260NPBF directly replace the IXTM50N20 without circuit modification?

A: Electrical substitution is direct. The gate drive voltage, drain-source voltage, and current ratings are identical. PCB layout modification is required due to package format change from TO-204AE to TO-247AC. No schematic changes are necessary.

Q: What is the primary difference between these two devices?

A: The IXTM50N20 and IRFP260NPBF are electrically equivalent with identical voltage (200V), current (50A), and power ratings (300W). The primary difference is packaging: IXTM50N20 uses TO-204AE while IRFP260NPBF uses TO-247AC. The IRFP260NPBF also features lower on-state resistance (40 mOhm versus 45 mOhm) and extended temperature range (-55°C to 175°C versus -55°C to 150°C).

Q: Is the IRFP260NPBF available in the same TO-204AE package?

A: No. The IRFP260NPBF is manufactured exclusively in TO-247AC package format. Alternative sourcing of the original IXTM50N20 in TO-204AE is limited due to obsolete status.

Q: What are the thermal implications of switching from TO-204AE to TO-247AC?

A: The TO-247AC package provides superior thermal performance compared to TO-204AE through improved lead design and larger copper contact area. This enables more efficient heat transfer to the PCB and external heatsinks, supporting the 300W power dissipation rating with lower junction temperatures under equivalent thermal loads.

Q: Are there compliance or certification concerns with substitution?

A: No. Both devices maintain ROHS3 compliance and REACH unaffected status. Regulatory requirements are satisfied for equivalent applications.

Q: What is the gate charge difference between these devices?

A: The IXTM50N20 specifies 220 nC gate charge at 10V, while the IRFP260NPBF specifies 234 nC at 10V. This 14 nC difference is negligible for gate drive circuit design and does not require circuit modification.

Q: Can the IRFP260NPBF handle the same continuous current as the IXTM50N20?

A: Yes. Both devices are rated for 50A continuous drain current at 25°C. The IRFP260NPBF's lower on-state resistance (40 mOhm) results in reduced power dissipation and improved thermal performance at equivalent current levels.

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