IXTM40N30 Equivalent & Substitute Parts

Part Overview

The IXTM40N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 40A continuous drain current at 25°C. Manufactured by IXYS in the GigaMOS™ series, this device is packaged in a TO-204AE through-hole configuration and rated for 300W power dissipation. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	40	A
Power Dissipation (Max)	300	W
Rds On (Max) @ 20A, 10V	88	mOhm
Gate Charge (Qg) @ 10V	220	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-204AE
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTM40N30 is determined by equivalence in the following critical electrical parameters:

Drain-to-Source Voltage (Vdss): 300V minimum
Continuous Drain Current (Id): 40A or greater at 25°C
Power Dissipation: 300W or greater
Gate-Source Voltage (Vgs): ±20V maximum rating
Threshold Voltage (Vgs(th)): 4V @ 250µA
Operating Temperature Range: Support for -55°C to 150°C minimum

The STW46NF30 qualifies as a substitute based on matching or exceeding these parameters. While the substitute features a different package type (TO-247-3 versus TO-204AE), both are through-hole configurations suitable for PCB mounting. The substitute demonstrates improved electrical characteristics in gate charge and on-resistance, with extended maximum junction temperature capability.

Parameter Comparison

Parameter	IXTM40N30	STW46NF30	Unit
Manufacturer	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300	300	V
Continuous Drain Current (Id) @ 25°C	40	42	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max)	88 @ 20A, 10V	75 @ 17A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) @ 10V	220	90	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) @ 25V	4600	3200	pF
Power Dissipation (Max)	300	300	W
Operating Temperature (TJ)	-55 to 150	-55 to 175	°C
Mounting Type	Through Hole	Through Hole
Package / Case	TO-204AE	TO-247-3
Product Status	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

The STW46NF30 is a direct functional substitute for the IXTM40N30 based on electrical parameter equivalence and regulatory compliance alignment. Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory continuity in applications requiring these certifications.

The STW46NF30 offers the following advantages for substitution:

Active Product Status: The substitute is currently in active production, ensuring long-term availability and supply chain stability compared to the obsolete IXTM40N30.
Improved Electrical Performance: Lower gate charge (90 nC versus 220 nC) and reduced on-resistance (75 mOhm versus 88 mOhm) provide enhanced switching efficiency and reduced thermal dissipation.
Extended Temperature Range: Maximum junction temperature of 175°C versus 150°C provides additional thermal margin in high-temperature applications.
Package Compatibility: Both devices are through-hole mounted; however, the TO-247-3 package of the STW46NF30 features different pin spacing and footprint dimensions compared to the TO-204AE. PCB layout modification is required.

Selection of the STW46NF30 is appropriate for applications where the 300V/40A+ rating, 300W power dissipation, and through-hole mounting are required specifications. Verification of PCB footprint compatibility with the TO-247-3 package is necessary prior to implementation.

Frequently Asked Questions (FAQ)

Q: Can the STW46NF30 directly replace the IXTM40N30 without PCB modification?

A: The STW46NF30 is electrically equivalent to the IXTM40N30 and meets all functional requirements. However, the package types differ (TO-247-3 versus TO-204AE), requiring PCB footprint modification. Pin configuration and spacing are not identical between these packages.

Q: What are the key electrical parameters that define substitution eligibility?

A: Substitution is determined by matching or exceeding: Vdss (300V), continuous drain current (40A minimum), power dissipation (300W), gate-source voltage rating (±20V), threshold voltage (4V @ 250µA), and operating temperature range (-55°C to 150°C minimum).

Q: Why is the STW46NF30 preferred over the IXTM40N30 for new designs?

A: The IXTM40N30 is classified as obsolete, while the STW46NF30 is in active production. Active status ensures component availability, supply chain continuity, and ongoing manufacturer support. The STW46NF30 also demonstrates superior electrical characteristics and extended temperature capability.

Q: Are there compliance or certification differences between these devices?

A: Both devices maintain ROHS3 compliance and REACH unaffected status. No compliance or certification differences exist that would prevent substitution in regulated applications.

Q: What is the impact of lower gate charge in the STW46NF30?

A: Gate charge of 90 nC in the STW46NF30 versus 220 nC in the IXTM40N30 results in faster switching transitions and reduced gate drive power requirements. This improves overall circuit efficiency and reduces thermal stress on gate drive circuitry.

Q: Does the reduced on-resistance of the STW46NF30 affect thermal design?

A: The STW46NF30 on-resistance of 75 mOhm (versus 88 mOhm) reduces conduction losses and heat generation during operation. This allows for reduced heatsink requirements or improved thermal margin in existing thermal designs.

Q: Are there any current rating differences that affect application suitability?

A: The STW46NF30 is rated for 42A continuous drain current versus 40A for the IXTM40N30. This 2A increase provides additional current margin and is fully compatible with applications designed for the 40A rating.

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