IXTM12N100 Equivalent & Substitute Parts

Part Overview

The IXTM12N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. Manufactured by IXYS in the GigaMOS™ series, this device is packaged in TO-204AA (TO-3) through-hole configuration and rated for 300W maximum power dissipation. The product is classified as obsolete, necessitating identification of equivalent substitute components that maintain functional compatibility for existing applications and new designs requiring equivalent performance characteristics.

Substiute Parts

IXTM12N100
IXYSIn Stock: 1064IXTM12N100 Datasheet
IXTM12N100
Current Part
STW13NK100Z
STMicroelectronicsIn Stock: 5097STW13NK100Z Datasheet
STW13NK100Z
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 1000 V
Continuous Drain Current (Id) @ 25°C 12 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4.5 V @ 250µA
Gate Charge (Qg) @ Vgs 170 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 4000 pF @ 25V
Power Dissipation (Max) 300 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package TO-204AA (TO-3) -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IXTM12N100 is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 1000V Vdss rating to ensure safe operation in high-voltage applications without exceeding device voltage limits.

Current Rating Compatibility: The substitute part must support continuous drain current at or above 12A at 25°C to handle the same load conditions as the original device.

Gate Threshold Voltage: The substitute part must maintain Vgs(th) within compatible ranges to ensure proper gate drive circuit operation without modification.

Maximum Gate Voltage: The substitute part must support the gate voltage levels of the existing drive circuit topology.

Operating Temperature Range: The substitute part must cover the full operating temperature range of -55°C to 150°C to maintain performance across all environmental conditions.

Mounting Configuration: The substitute part must be compatible with through-hole mounting to allow direct board-level integration without redesign.

Regulatory Compliance: The substitute part must maintain ROHS3 compliance and REACH unaffected status to meet current manufacturing and environmental standards.

The STW13NK100Z from STMicroelectronics meets these substitution criteria with equivalent voltage and temperature ratings, compatible gate characteristics, and through-hole mounting in TO-247-3 package configuration.

Parameter Comparison

Parameter IXTM12N100 (Main Part) STW13NK100Z (Substitute) Unit
Manufacturer IXYS STMicroelectronics -
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 1000 1000 V
Continuous Drain Current (Id) @ 25°C 12 13 A
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 1.05 @ 6A, 10V 0.7 @ 6.5A, 10V Ohm
Gate Threshold Voltage (Vgs(th)) @ Id 4.5 @ 250µA 4.5 @ 150µA V
Gate Charge (Qg) @ Vgs 170 @ 10V 266 @ 10V nC
Maximum Gate Voltage (Vgs) ±20 ±30 V
Input Capacitance (Ciss) @ Vds 4000 @ 25V 6000 @ 25V pF
Power Dissipation (Max) 300 350 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole -
Package / Case TO-204AA (TO-3) TO-247-3 -
Product Status Obsolete Active -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
REACH Status REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

Product Status Consideration: The IXTM12N100 is classified as obsolete, making the STW13NK100Z a necessary alternative for new production and ongoing supply continuity. The STW13NK100Z maintains active product status with established supply channels.

Electrical Equivalence: Both devices share identical 1000V Vdss ratings and compatible operating temperature ranges (-55°C to 150°C). The STW13NK100Z provides higher continuous drain current (13A versus 12A) and superior power dissipation capability (350W versus 300W), offering performance margin for the same voltage class.

Gate Drive Compatibility: Both devices maintain 4.5V gate threshold voltage, ensuring compatibility with existing gate drive circuits. The STW13NK100Z supports higher maximum gate voltage (±30V versus ±20V), providing additional design flexibility without requiring circuit modification.

Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, meeting current manufacturing and environmental requirements without additional qualification.

Package Consideration: The STW13NK100Z uses TO-247-3 through-hole packaging versus the TO-204AA (TO-3) of the original part. Both are through-hole configurations suitable for PCB mounting, though physical footprint differences require board layout verification.

On-Resistance Performance: The STW13NK100Z exhibits lower on-resistance (0.7 mOhm at 6.5A versus 1.05 Ohm at 6A), resulting in reduced conduction losses and improved thermal performance in switching applications.

Frequently Asked Questions (FAQ)

Q: Can the STW13NK100Z directly replace the IXTM12N100 without circuit modification?

A: Electrical substitution is valid based on matching voltage ratings, gate threshold voltage, and operating temperature range. Physical board layout modification is required due to different through-hole package configurations (TO-247-3 versus TO-204AA). Gate drive circuit compatibility is maintained without modification.

Q: What are the key differences between these two devices?

A: The primary differences are package type (TO-247-3 versus TO-204AA), continuous drain current rating (13A versus 12A), power dissipation capability (350W versus 300W), on-resistance (0.7 mOhm versus 1.05 Ohm), gate charge (266 nC versus 170 nC), and maximum gate voltage (±30V versus ±20V). Voltage rating and operating temperature range are identical.

Q: Does the higher gate charge of the STW13NK100Z affect gate drive circuit design?

A: The STW13NK100Z requires 266 nC gate charge compared to 170 nC for the IXTM12N100. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Existing gate drive circuits should be evaluated for current capacity, though the difference may not require modification in most applications.

Q: Is the TO-247-3 package suitable for the same PCB mounting as TO-204AA?

A: Both are through-hole packages, but physical dimensions and pin configurations differ. TO-247-3 and TO-204AA (TO-3) have different lead spacing and mounting hole patterns. PCB redesign is necessary to accommodate the different package footprint.

Q: Are both devices suitable for high-temperature applications?

A: Both devices support the identical operating temperature range of -55°C to 150°C (TJ). Thermal management design should account for the different power dissipation capabilities (350W for STW13NK100Z versus 300W for IXTM12N100) and package thermal characteristics.

Q: What is the significance of the lower on-resistance in the STW13NK100Z?

A: Lower on-resistance (0.7 mOhm versus 1.05 Ohm) reduces conduction losses during the on-state, resulting in lower heat generation and improved efficiency. This provides performance margin in thermal-limited applications without requiring circuit modification.

Q: Do both devices meet current environmental and compliance standards?

A: Both devices are ROHS3 compliant and REACH unaffected, meeting current manufacturing and environmental standards. The IXTM12N100 is obsolete, while the STW13NK100Z maintains active product status with established supply availability.

Request Quote (Ships tomorrow)