IXTM11N80 Equivalent & Substitute Parts

Part Overview

The IXTM11N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 11A continuous drain current at 25°C. Manufactured by IXYS as part of the GigaMOS™ series, this device is housed in a TO-204AA (TO-3) through-hole package and is rated for 300W maximum power dissipation. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IXTM11N80

IXYSIn Stock: 937IXTM11N80 Datasheet

Current PartRFQ

FCPF400N80Z

onsemiIn Stock: 8585FCPF400N80Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTM11N80 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 800V minimum
• Continuous Drain Current (Id): 11A minimum at 25°C
• Gate-Source Voltage (Vgs): ±20V maximum
• Operating Temperature Range: -55°C to 150°C minimum
• Through-hole mounting configuration

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed
• Power Dissipation Rating: Determines thermal management requirements

The FCPF400N80Z from onsemi meets the critical electrical specifications (800V Vdss, 11A Id, ±20V Vgs, -55°C to 150°C operating range) and maintains through-hole mounting compatibility. However, the package format differs (TO-220F-3 versus TO-204AA), and power dissipation ratings vary significantly (35.7W versus 300W), requiring thermal design evaluation during substitution.

Parameter Comparison

Engineering Selection Recommendations

IXTM11N80 Status: Obsolete. Original manufacturer (IXYS) has discontinued this device. Existing inventory is limited to available stock.

FCPF400N80Z Status: Not For New Designs. onsemi has designated this part for legacy support only and does not recommend it for new circuit development.

Compliance Considerations: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental regulatory requirements for EU and international markets.

Substitution Feasibility: The FCPF400N80Z provides electrical equivalence across all critical parameters (Vdss, Id, Vgs, operating temperature). However, the following design factors require evaluation:

1. Package Transition: TO-204AA (TO-3) to TO-220F-3 requires PCB layout modification and mechanical redesign of mounting hardware.

2. Thermal Performance: The FCPF400N80Z exhibits significantly lower power dissipation rating (35.7W versus 300W). Applications requiring sustained high-power operation must implement enhanced thermal management or operate at reduced current levels.

3. On-State Resistance: The FCPF400N80Z demonstrates superior Rds On performance (400mOhm versus 950mOhm), resulting in lower conduction losses and reduced heat generation.

4. Switching Characteristics: Lower gate charge (56nC versus 170nC) and input capacitance (2350pF versus 4500pF) in the FCPF400N80Z enable faster switching operation and reduced driver power requirements.

For applications where the original TO-204AA package and 300W power rating are essential, alternative N-Channel 800V MOSFETs from other manufacturers with equivalent specifications should be evaluated.

Frequently Asked Questions (FAQ)

Q: Can the FCPF400N80Z directly replace the IXTM11N80 in existing designs?

A: Electrical substitution is possible due to matching Vdss (800V), Id (11A), Vgs (±20V), and operating temperature range (-55°C to 150°C). However, package format differs (TO-220F-3 versus TO-204AA), requiring PCB and mechanical redesign. Thermal design must account for the reduced power dissipation rating (35.7W versus 300W).

Q: What are the key electrical parameters that determine MOSFET substitution?

A: Drain-to-source voltage (Vdss), continuous drain current (Id), gate-source voltage (Vgs), and operating temperature range must meet or exceed the original specification. Secondary parameters including on-state resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) affect performance but do not prevent substitution if primary parameters are satisfied.

Q: Why does the FCPF400N80Z have lower power dissipation than the IXTM11N80?

A: Power dissipation rating reflects the maximum thermal load the device can sustain under specified conditions. The FCPF400N80Z in TO-220F-3 package has lower thermal mass and different heat dissipation characteristics compared to the larger TO-204AA (TO-3) package. Lower Rds On (400mOhm versus 950mOhm) reduces conduction losses, partially offsetting the thermal rating difference.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices maintain ROHS3 compliance and REACH unaffected status. No regulatory barriers exist for substitution from an environmental or hazardous substance perspective.

Q: What mounting considerations apply when substituting from TO-204AA to TO-220F-3?

A: TO-204AA (TO-3) and TO-220F-3 packages have different pin configurations, lead spacing, and mounting hole patterns. PCB layout must be redesigned to accommodate the new package footprint. Mechanical mounting hardware and heat sink interfaces require modification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FCPF400N80Z requires significantly less gate charge (56nC versus 170nC), reducing driver power consumption and enabling faster switching transitions. This improves efficiency in high-frequency switching applications.

Q: Is the FCPF400N80Z suitable for high-power continuous operation?

A: The FCPF400N80Z power dissipation rating (35.7W) is substantially lower than the IXTM11N80 (300W). Applications requiring sustained high-power operation must either reduce operating current, implement enhanced thermal management, or select alternative devices with higher power ratings.