IXTK80N25 N-Channel MOSFET 250V 80A Equivalent & Substitute Parts

Part Overview

The IXTK80N25 is an N-Channel MOSFET rated for 250V drain-to-source voltage with 80A continuous drain current in a TO-264 through-hole package. This device is part of the MegaMOS™ series and is currently classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades.

Substiute Parts

IXTK80N25

IXYSIn Stock: 1856IXTK80N25 Datasheet

Current PartRFQ

IXFH80N25X3

IXYSIn Stock: 2279IXFH80N25X3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTK80N25 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating (Vdss) must equal or exceed 250V
• Continuous drain current (Id) must equal or exceed 80A at 25°C
• Gate threshold voltage (Vgs(th)) must be compatible with existing gate drive circuits
• On-state resistance (Rds On) must not exceed the maximum specified value to prevent thermal runaway
• Gate charge (Qg) and input capacitance (Ciss) must be within acceptable ranges for gate driver performance
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting type must be through-hole
• Package footprint must be compatible with existing PCB layouts or acceptable with minor modifications
• Pin configuration must match or be adaptable to existing circuit designs

The IXFH80N25X3 meets these substitution criteria with equivalent voltage and current ratings, though it features a different package type (TO-247 versus TO-264) and improved electrical characteristics in certain parameters.

Parameter Comparison

Engineering Selection Recommendations

IXFH80N25X3 as Primary Substitute:

The IXFH80N25X3 is the recommended substitute for the obsolete IXTK80N25. Both devices are manufactured by IXYS and share identical voltage and current ratings (250V, 80A). The IXFH80N25X3 is currently in active production status, ensuring long-term availability and supply chain stability.

Electrical Performance:

The IXFH80N25X3 demonstrates superior electrical characteristics compared to the IXTK80N25. The on-state resistance is reduced from 33 mOhm to 16 mOhm, resulting in lower conduction losses and reduced thermal dissipation requirements. Gate charge is significantly lower at 83 nC versus 240 nC, enabling faster switching performance and reduced gate driver power consumption. Input capacitance is marginally lower at 5430 pF versus 6000 pF.

Compliance and Certifications:

Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with current environmental and safety standards. The IXFH80N25X3 carries the same electrical safety certifications as the original part.

Package Consideration:

The primary difference between these devices is the package type: IXTK80N25 uses TO-264 while IXFH80N25X3 uses TO-247. Both are through-hole packages with different mechanical footprints. PCB layout modifications are required to accommodate the TO-247 package. Pin configuration compatibility must be verified against the specific application circuit before implementation.

Frequently Asked Questions (FAQ)

Q: Can the IXFH80N25X3 directly replace the IXTK80N25 without circuit modifications?

A: The IXFH80N25X3 is electrically compatible with the IXTK80N25 across all critical parameters (voltage, current, temperature range). However, the package type differs (TO-247 versus TO-264), requiring PCB layout modifications. Pin-to-pin compatibility must be verified for the specific application before implementation.

Q: What are the key electrical differences between these two parts?

A: The IXFH80N25X3 offers improved performance characteristics: on-state resistance is reduced by 50% (16 mOhm versus 33 mOhm), gate charge is reduced by 65% (83 nC versus 240 nC), and input capacitance is slightly lower (5430 pF versus 6000 pF). These improvements result in lower conduction losses and faster switching performance.

Q: Why is the IXTK80N25 classified as obsolete?

A: The IXTK80N25 is part of the legacy MegaMOS™ series. IXYS has transitioned to newer product lines such as the HiPerFET™ Ultra X3 series, represented by the IXFH80N25X3, which offer superior performance and continued manufacturing support.

Q: Are there any thermal management differences between the TO-264 and TO-247 packages?

A: Both packages are through-hole designs with different mechanical footprints and thermal characteristics. The IXTK80N25 (TO-264) has a maximum power dissipation rating of 540W, while the IXFH80N25X3 (TO-247) is rated for 390W. Thermal management design must account for the specific package thermal resistance and application cooling requirements.

Q: What compliance standards apply to both parts?

A: Both the IXTK80N25 and IXFH80N25X3 are ROHS3 compliant and REACH unaffected. These certifications ensure compliance with current environmental regulations and restrictions on hazardous substances in electrical and electronic equipment.

Q: Can gate drive circuits designed for the IXTK80N25 operate the IXFH80N25X3 without modification?

A: Gate threshold voltage (Vgs(th)) is slightly higher for the IXFH80N25X3 (4.5V versus 4V), and gate charge is significantly lower (83 nC versus 240 nC). Existing gate drive circuits must be evaluated to ensure adequate gate voltage supply and current capability. The reduced gate charge may improve switching performance but requires verification against the specific gate driver specifications.

Q: What is the operating temperature range for both devices?

A: Both the IXTK80N25 and IXFH80N25X3 operate across the same temperature range: -55°C to 150°C (junction temperature). This ensures thermal compatibility across industrial and high-temperature applications.