IXTK62N25 Equivalent & Substitute Parts

Part Overview

The IXTK62N25 is an N-Channel MOSFET rated for 250V drain-to-source voltage with a continuous drain current of 62A at 25°C. Manufactured by IXYS, this device is housed in a TO-264 (IXTK) through-hole package and is part of the MegaMOS™ series. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing system support, redesigns, and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating potential package variations.

Substiute Parts

IXTK62N25
IXYSIn Stock: 2096IXTK62N25 Datasheet
IXTK62N25
Current Part
STP50NF25
STMicroelectronicsIn Stock: 4748STP50NF25 Datasheet
STP50NF25
Similar
STW52NK25Z
STMicroelectronicsIn Stock: 1321STW52NK25Z Datasheet
STW52NK25Z
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 250 V
Continuous Drain Current (Id) @ 25°C 62 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 35 mOhm @ 31A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 240 nC @ 10V
Input Capacitance (Ciss) @ Vds 5400 pF @ 25V
Power Dissipation (Max) 390 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package TO-264-3
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTK62N25 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 250V
  • Continuous Drain Current (Id): Must equal or exceed 62A at 25°C
  • Gate Drive Voltage: Must support 10V operation
  • Operating Temperature Range: Must span -55°C to 150°C
  • Mounting Type: Through-hole configuration required
  • FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

  • Rds On (on-state resistance) characteristics at specified gate voltage
  • Gate charge and input capacitance values
  • Power dissipation capability
  • Package footprint compatibility with PCB layout

The substitute parts identified (STW52NK25Z and STP50NF25) meet the primary electrical criteria but differ in package form factor and certain secondary parameters. These differences are documented in the parameter comparison table below.

Parameter Comparison

Parameter IXTK62N25 STW52NK25Z STP50NF25
Manufacturer IXYS STMicroelectronics STMicroelectronics
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Continuous Drain Current (Id) @ 25°C 62 A 52 A 45 A
Drive Voltage (Max Rds On) 10 V 10 V 10 V
Rds On (Max) @ Id, Vgs 35 mOhm @ 31A, 10V 45 mOhm @ 26A, 10V 69 mOhm @ 22A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA 4.5 V @ 150µA 4 V @ 250µA
Gate Charge (Qg) @ Vgs 240 nC @ 10V 160 nC @ 10V 68.2 nC @ 10V
Input Capacitance (Ciss) @ Vds 5400 pF @ 25V 4850 pF @ 25V 2670 pF @ 25V
Power Dissipation (Max) 390 W 300 W 160 W
Operating Temperature Range -55 to 150 °C -55 to 150 °C -55 to 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package TO-264-3 TO-247-3 TO-220-3
Product Status Obsolete Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STW52NK25Z (STMicroelectronics SuperMESH™ Series)

The STW52NK25Z provides the closest electrical performance match to the IXTK62N25 with a 52A continuous drain current rating and 300W power dissipation. This part maintains the 250V Vdss specification and supports 10V gate drive operation. The device is housed in a TO-247-3 package, which differs from the original TO-264 form factor but remains a through-hole configuration suitable for PCB mounting. The part is classified as "Not For New Designs," indicating limited long-term availability. RoHS3 compliance and REACH unaffected status align with the original part specifications.

STP50NF25 (STMicroelectronics STripFET™ Series)

The STP50NF25 is an active product with a 45A continuous drain current rating and 160W power dissipation. While this part meets the 250V Vdss requirement and 10V gate drive specification, the reduced current rating and power dissipation represent a significant departure from the original IXTK62N25 specifications. The TO-220-3 package is the smallest of the three options and may require PCB layout modifications. This part is suitable for applications where current and thermal requirements are lower than the original design. RoHS3 compliance and REACH unaffected status are maintained.

Product Status Considerations

The IXTK62N25 is obsolete, necessitating substitution for ongoing support. The STW52NK25Z is classified as "Not For New Designs," indicating potential future discontinuation. The STP50NF25 is the only active product among the three, offering the longest procurement horizon for new applications or redesigns requiring extended component availability.

Frequently Asked Questions (FAQ)

Q: Can the STW52NK25Z directly replace the IXTK62N25 in existing designs?

A: The STW52NK25Z meets the primary electrical specifications (250V Vdss, 10V gate drive, -55°C to 150°C operating range) and maintains through-hole mounting. However, the package differs (TO-247-3 versus TO-264-3), requiring PCB layout verification. The 52A current rating is lower than the original 62A specification; applications operating near the original current limit require thermal and circuit analysis.

Q: Is the STP50NF25 suitable for high-current applications?

A: The STP50NF25 is rated for 45A continuous drain current, which is 27% lower than the IXTK62N25 specification. Applications requiring the full 62A capability cannot use this part. The 160W power dissipation is also significantly reduced compared to the original 390W rating. This part is appropriate only for applications with reduced current and thermal requirements.

Q: What are the package compatibility implications?

A: All three parts use through-hole mounting, but package outlines differ. The IXTK62N25 uses TO-264-3, the STW52NK25Z uses TO-247-3, and the STP50NF25 uses TO-220-3. PCB footprints, lead spacing, and thermal pad configurations vary. Physical verification against PCB layout is required before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the STW52NK25Z and STP50NF25 are RoHS3 compliant and REACH unaffected, matching the compliance status of the original IXTK62N25.

Q: What is the impact of different gate charge values?

A: The IXTK62N25 has a gate charge of 240 nC at 10V, while the STW52NK25Z has 160 nC and the STP50NF25 has 68.2 nC. Lower gate charge reduces driver power requirements and switching losses. Applications with gate driver circuits designed for the original 240 nC specification will operate with reduced switching stress using substitute parts with lower gate charge values.

Q: How do on-state resistance differences affect thermal performance?

A: The IXTK62N25 has an Rds On of 35 mOhm at 31A and 10V. The STW52NK25Z has 45 mOhm at 26A and 10V, and the STP50NF25 has 69 mOhm at 22A and 10V. Higher on-state resistance increases conduction losses and heat generation. Applications with tight thermal budgets require recalculation of junction temperature and heat sink requirements when substituting with higher Rds On devices.

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