IXTI10N60P Equivalent & Substitute Parts

Part Overview

The IXTI10N60P is an N-Channel 600V 10A MOSFET manufactured by IXYS in the PolarHV™ series. This device is packaged in TO-262 (I2PAK) through-hole configuration and rated for 200W power dissipation at case temperature. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10	A
Power Dissipation (Max)	200	W
Rds On (Max) @ 5A, 10V	740	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	5	V
Gate Charge (Qg) @ 10V	32	nC
Input Capacitance (Ciss) @ 25V	1610	pF
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-262 (I2PAK)	—

Substitute Part Grouping Explanation

Substitution of the IXTI10N60P is determined by alignment of critical electrical parameters: Drain-Source voltage rating (Vdss), continuous drain current capability (Id), power dissipation rating, and on-resistance (Rds On). The identified substitute parts maintain the 600V voltage rating and operate within compatible current and thermal specifications.

Critical Parameters for Substitution:

Vdss: 600V (exact match required)
Id: Minimum 5A (IXTI10N60P rated 10A)
Power Dissipation: Minimum 45W (IXTI10N60P rated 200W)
Gate drive voltage: 10V (standard across all parts)
Operating temperature: -55°C to 150°C (compatible range)

The substitute parts listed operate at reduced current and power ratings compared to the original part, making them suitable for applications where full 10A capability is not required. Mounting type differs between candidates, requiring circuit board redesign consideration.

Parameter Comparison

Parameter	IXTI10N60P	STB10N60M2	STD7ANM60N	Unit
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	—
Drain to Source Voltage (Vdss)	600	600	600	V
Continuous Drain Current (Id) @ 25°C	10	7.5	5	A
Power Dissipation (Max)	200	85	45	W
Rds On (Max) @ 10V	740 @ 5A	600 @ 3A	900 @ 2.5A	mOhm
Gate Threshold Voltage (Vgs(th))	5 @ 100µA	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) @ 10V	32	13.5	14	nC
Input Capacitance (Ciss)	1610 @ 25V	400 @ 100V	363 @ 50V	pF
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	—
Package	TO-262 (I2PAK)	TO-263 (D2PAK)	DPAK (TO-252)	—
Product Status	Obsolete	Active	Active	—
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

STB10N60M2 (STMicroelectronics): This part is recommended for applications where the original 10A capability can be reduced to 7.5A. The STB10N60M2 maintains the 600V rating and offers improved on-resistance characteristics (600mOhm vs. 740mOhm). The part is active in production with ROHS3 compliance. Surface mount D2PAK packaging requires circuit board redesign. Gate charge is significantly lower (13.5nC vs. 32nC), reducing gate drive circuit stress. Inventory availability is high (1878 units).

STD7ANM60N (STMicroelectronics): This part is suitable for lower-current applications requiring 5A maximum drain current. The STD7ANM60N carries AEC-Q101 automotive qualification and ROHS3 compliance, making it appropriate for automotive and regulated applications. Surface mount DPAK packaging requires circuit board redesign. On-resistance is higher (900mOhm vs. 740mOhm) due to lower current rating. Gate charge is comparable to STB10N60M2 (14nC). Inventory availability is high (1571 units).

Both substitute parts are active products with established supply chains, addressing the obsolescence status of the IXTI10N60P. Selection between them depends on required drain current capability and application qualification requirements.

Frequently Asked Questions (FAQ)

Q: Can the STB10N60M2 or STD7ANM60N directly replace the IXTI10N60P without circuit modification?

A: Direct replacement is not possible due to mounting type differences. The IXTI10N60P uses through-hole TO-262 packaging, while both substitutes use surface mount packages (D2PAK and DPAK respectively). Circuit board redesign is required. Additionally, the reduced current ratings (7.5A and 5A) must be verified against application requirements.

Q: What is the impact of lower drain current ratings on circuit performance?

A: The substitute parts are rated for 7.5A (STB10N60M2) and 5A (STD7ANM60N) versus the original 10A. If the application operates at currents exceeding these limits, the substitute will exceed its continuous current specification, resulting in thermal stress and potential device failure. Current requirements must be verified before substitution.

Q: How do the on-resistance values affect circuit operation?

A: On-resistance (Rds On) determines conduction losses in the MOSFET. The STB10N60M2 exhibits lower on-resistance (600mOhm) compared to the original (740mOhm), reducing power dissipation. The STD7ANM60N has higher on-resistance (900mOhm), increasing power dissipation. These differences affect thermal management and efficiency calculations.

Q: Are there compliance or qualification differences between the parts?

A: The STD7ANM60N carries AEC-Q101 automotive qualification, making it suitable for automotive applications. The STB10N60M2 does not list automotive qualification. Both substitute parts are ROHS3 compliant, while the original IXTI10N60P is REACH Unaffected. Compliance requirements must be verified against application specifications.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The original part requires 32nC, while substitutes require 13.5nC (STB10N60M2) and 14nC (STD7ANM60N). Lower gate charge reduces gate drive power requirements and may improve switching performance. Gate drive circuits may require adjustment to optimize switching characteristics.

Q: Can the through-hole IXTI10N60P be replaced with a surface mount part using adapter boards?

A: While mechanical adapters exist, this approach introduces additional thermal resistance and parasitic inductance, degrading thermal performance and switching characteristics. Direct circuit board redesign to accommodate surface mount packages is the preferred engineering approach.

Q: What is the impact of different input capacitance values?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transients. The original part has 1610pF at 25V, while substitutes have significantly lower values (400pF and 363pF). Lower capacitance reduces gate drive circuit loading and may improve switching speed, but requires verification that gate drive circuits remain stable with the reduced capacitive load.

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