IXTH96N25T Equivalent & Substitute Parts

Part Overview

The IXTH96N25T is an N-Channel MOSFET manufactured by IXYS, rated for 250V drain-to-source voltage with 96A continuous drain current at 25°C. This device is housed in a TO-247 package and is designed for high-current switching applications requiring robust thermal performance. The part is currently in active production status with 5525 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the TO-247 package family and meeting the same regulatory compliance standards.

Substiute Parts

IXTH96N25T

IXYSIn Stock: 5573IXTH96N25T Datasheet

Current PartRFQ

IRFP4332PBF

Infineon TechnologiesIn Stock: 19106IRFP4332PBF Datasheet

SimilarRFQ

IRFP4868PBF

Infineon TechnologiesIn Stock: 54628IRFP4868PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH96N25T is determined by the following criteria:

Primary Compatibility Parameters:

• FET Type: N-Channel (required match)
• Package Family: TO-247 or TO-247AC (mechanical and thermal compatibility)
• Drain-to-Source Voltage (Vdss): Equal to or greater than 250V
• Continuous Drain Current (Id): Equal to or greater than 96A at 25°C
• On-State Resistance (Rds On): Equal to or lower than 29mOhm at specified conditions
• Gate Threshold Voltage: Within ±30V maximum gate voltage specification
• Operating Temperature Range: Must support -55°C minimum operation

Regulatory Compliance:

• RoHS3 Compliant status required
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The substitute parts identified meet the electrical performance envelope of the IXTH96N25T while maintaining package compatibility and regulatory compliance. However, variations in gate charge, input capacitance, and maximum power dissipation exist and must be evaluated for specific circuit requirements.

Parameter Comparison

Engineering Selection Recommendations

IRFP4332PBF (Infineon Technologies)

The IRFP4332PBF is an active-status substitute suitable for applications where the continuous drain current requirement does not exceed 57A. This device matches the 250V Vdss rating and provides comparable on-state resistance (33mOhm versus 29mOhm). The lower gate charge (150nC versus 114nC) results in slightly increased switching losses. The operating temperature range extends to 175°C, providing additional thermal margin. This part is recommended for new designs requiring 250V operation at reduced current levels.

IRFP4868PBF (Infineon Technologies)

The IRFP4868PBF is classified as "Not For New Designs" and carries a higher Vdss rating of 300V with 70A continuous drain current. While this device provides higher voltage headroom, the significantly increased gate charge (270nC versus 114nC) and input capacitance (10774pF versus 6100pF) result in higher switching losses and gate drive requirements. This part is suitable only for legacy system maintenance or applications where 300V operation is required and the increased parasitic capacitance is acceptable.

Regulatory Compliance

Both substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, matching the compliance profile of the IXTH96N25T.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4332PBF directly replace the IXTH96N25T in all applications?

A: The IRFP4332PBF is electrically compatible for applications requiring 250V operation; however, the continuous drain current rating is 57A compared to 96A for the IXTH96N25T. Direct substitution is valid only when circuit current requirements do not exceed 57A at 25°C. The on-state resistance is slightly higher (33mOhm versus 29mOhm), resulting in marginally increased conduction losses.

Q: What are the package compatibility considerations between TO-247 and TO-247AC?

A: Both TO-247 and TO-247AC are three-lead through-hole packages with identical pin spacing and mounting footprints. The primary difference is internal construction and thermal characteristics. Both packages are mechanically interchangeable on standard PCB layouts designed for TO-247 devices.

Q: Why is the IRFP4868PBF marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that the manufacturer has designated this part for legacy applications only. New circuit designs should utilize the IRFP4332PBF or equivalent active-status alternatives. Existing systems using the IRFP4868PBF may continue operation, but new procurement should transition to active-status parts.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTH96N25T requires 114nC, while the IRFP4332PBF requires 150nC and the IRFP4868PBF requires 270nC. Higher gate charge increases switching losses and requires higher gate drive current. Gate drive circuits must be verified to supply sufficient current for the selected device.

Q: Are there current derating considerations when operating above 25°C?

A: The continuous drain current ratings provided (96A for IXTH96N25T, 57A for IRFP4332PBF, 70A for IRFP4868PBF) are specified at 25°C case temperature. Actual current capacity decreases as junction temperature increases. Thermal design and heat sink selection must account for the maximum operating temperature of 150°C (IXTH96N25T) or 175°C (Infineon devices) to maintain safe operation.

Q: What is the significance of the maximum gate voltage (Vgs Max) specification?

A: The IXTH96N25T specifies ±30V maximum gate voltage, while the IRFP4868PBF specifies ±20V. Gate drive circuits must not exceed these limits to prevent gate oxide damage. The IRFP4868PBF has a more restrictive specification and requires gate drive circuit verification if substituted into existing designs.