IXTH96N20P N-Channel 200V 96A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH96N20P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 200V drain-to-source voltage and 96A continuous drain current in a through-hole TO-247 package. This device is manufactured by IXYS and is currently in active production status. The IXTH96N20P is part of the Polar series and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when alternative MOSFETs share the same or compatible electrical ratings and mechanical packaging, allowing direct replacement in circuit applications without design modification. Substitutes are necessary when the primary part becomes unavailable, when supply chain optimization is required, or when alternative sourcing improves cost or lead time performance.

Substiute Parts

IXTH96N20P

IXYSIn Stock: 783IXTH96N20P Datasheet

Current PartRFQ

IRFP4227PBF

Infineon TechnologiesIn Stock: 53297IRFP4227PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH96N20P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Package Type: Must be TO-247 or TO-247AC (mechanically compatible through-hole packages)
• FET Type: Must be N-Channel MOSFET
• Technology: Must be Metal Oxide Semiconductor (MOSFET)
• Mounting Type: Must be Through Hole

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Must be compatible with 5V @ 250µA specification
• Maximum Gate Voltage (Vgs Max): Must accommodate ±20V or greater
• Operating Temperature Range: Must support -55°C to 175°C or equivalent range
• RoHS and REACH Compliance: Must maintain ROHS3 Compliant and REACH Unaffected status

The IRFP4227PBF meets all primary substitution criteria. While the continuous drain current rating (65A) is lower than the IXTH96N20P (96A), and power dissipation (330W) is reduced compared to the main part (600W), the IRFP4227PBF maintains electrical compatibility across voltage ratings, gate characteristics, and package specifications. This substitute is suitable for applications where the lower current and power ratings are acceptable within the circuit design constraints.

Parameter Comparison

Engineering Selection Recommendations

IXTH96N20P (Primary Part)

The IXTH96N20P remains the preferred selection when full specifications are required. This device provides the highest continuous drain current (96A) and maximum power dissipation (600W) within the 200V voltage class. The part is in active production status with 760 pieces in current inventory. Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment. The operating temperature range of -55°C to 175°C supports extended environmental applications.

IRFP4227PBF (Substitute Part)

The IRFP4227PBF is a qualified substitute when the application circuit can operate within reduced current and power specifications. This Infineon Technologies device maintains identical voltage ratings (200V Vdss) and compatible gate characteristics (5V threshold voltage). The TO-247-3 package ensures mechanical compatibility with existing PCB layouts and thermal management designs. RoHS3 and REACH compliance status matches the primary part. Significantly higher inventory availability (53,200 pieces) may provide supply chain advantages. The lower operating temperature minimum (-40°C versus -55°C) should be evaluated against application requirements.

Both parts are active production devices with full regulatory compliance. Selection between them depends on application current requirements, thermal design constraints, and environmental temperature specifications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4227PBF directly replace the IXTH96N20P in all applications?

A: Direct replacement is possible only when the application circuit operates at or below 65A continuous drain current and 330W power dissipation. The IRFP4227PBF shares identical voltage ratings (200V), gate threshold voltage (5V @ 250µA), and TO-247-3 package specifications. Applications requiring the full 96A rating or 600W dissipation capability must retain the IXTH96N20P.

Q: Are there package compatibility concerns between TO-247 and TO-247AC?

A: Both the IXTH96N20P (TO-247) and IRFP4227PBF (TO-247AC) use the TO-247-3 package designation. The TO-247AC variant is mechanically and electrically compatible with standard TO-247 through-hole mounting. PCB footprints, lead spacing, and thermal pad dimensions are identical. No design modification is required for package substitution.

Q: What is the impact of the 145nC versus 98nC gate charge difference?

A: The IXTH96N20P exhibits higher gate charge (145nC @ 10V) compared to the IRFP4227PBF (98nC @ 10V). This difference affects gate drive circuit design and switching speed characteristics. Applications with fixed gate drive circuits may experience slightly different switching performance. Gate drive circuits designed for the IXTH96N20P will operate the IRFP4227PBF without modification, though switching transitions may be faster due to lower gate charge.

Q: Does the ±30V maximum gate voltage of the IRFP4227PBF provide an advantage?

A: The IRFP4227PBF supports ±30V maximum gate voltage compared to ±20V for the IXTH96N20P. This provides additional margin in gate drive circuit design but does not affect substitution compatibility. Existing gate drive circuits designed for ±20V operation will function correctly with the IRFP4227PBF without modification.

Q: What is the significance of the -40°C minimum operating temperature for the IRFP4227PBF?

A: The IRFP4227PBF operates from -40°C to 175°C, while the IXTH96N20P operates from -55°C to 175°C. Applications requiring operation below -40°C must use the IXTH96N20P. Applications limited to -40°C and above can use either device without thermal performance concerns.

Q: Are both parts suitable for high-frequency switching applications?

A: Both devices are suitable for high-frequency switching. The IRFP4227PBF exhibits lower gate charge (98nC), which may provide faster switching transitions in gate-drive-limited applications. The IXTH96N20P, with higher gate charge (145nC), may require slightly more gate drive current for equivalent switching speed. Frequency capability is determined by the specific gate drive circuit design and thermal management implementation.

Q: What inventory considerations should influence part selection?

A: The IRFP4227PBF has significantly higher inventory availability (53,200 pieces) compared to the IXTH96N20P (760 pieces). For applications where current and power ratings are compatible, the IRFP4227PBF may offer improved lead time and supply chain stability. The IXTH96N20P should be selected when its higher current and power ratings are essential to circuit performance.