IXTH88N15 Equivalent & Substitute Parts

Part Overview

The IXTH88N15 is an N-Channel MOSFET rated for 150V drain-to-source voltage with 88A continuous drain current at 25°C. This device is packaged in a TO-247 through-hole configuration and is designed for high-power switching applications requiring robust thermal management. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

IXTH88N15

IXYSIn Stock: 5875IXTH88N15 Datasheet

Current PartRFQ

IRFP4568PBF

Infineon TechnologiesIn Stock: 10381IRFP4568PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH88N15 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 150V minimum
• FET Type: N-Channel MOSFET
• Package: TO-247 through-hole configuration
• Mounting: Through-hole compatible

Performance Considerations: Substitute parts must maintain or exceed the continuous drain current rating and power dissipation capability. The on-state resistance (Rds On), gate charge, and threshold voltage are secondary parameters that influence switching performance and thermal behavior but do not preclude substitution when primary electrical ratings are met.

The IRFP4568PBF qualifies as a substitute based on matching Vdss (150V), FET type (N-Channel), and package configuration (TO-247-3 through-hole). This part exceeds the current and power ratings of the original device, providing enhanced performance margin.

Parameter Comparison

Engineering Selection Recommendations

IXTH88N15 (Original Part): The IXTH88N15 is classified as obsolete. While inventory remains available (5825 pcs), this part is no longer in active production. Selection of this device is appropriate only when existing designs are locked to this specific component or when legacy system maintenance requires exact part matching.

IRFP4568PBF (Substitute Part): The IRFP4568PBF is an active product from Infineon Technologies and is RoHS3 compliant. This device is electrically and mechanically compatible with the IXTH88N15 across all critical parameters: matching 150V Vdss rating, N-Channel configuration, and TO-247-3 through-hole package. The IRFP4568PBF provides superior performance characteristics, including higher continuous drain current (171A vs. 88A), lower on-state resistance (5.9 mOhm vs. 22 mOhm), and increased power dissipation capability (517W vs. 400W). The extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) provides additional thermal margin. Both parts carry REACH Unaffected and EAR99 ECCN designations.

For new designs and procurement of replacement components, the IRFP4568PBF is the recommended selection due to active product status, enhanced electrical performance, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4568PBF directly replace the IXTH88N15 in existing applications?

A: Yes. Both devices share identical drain-to-source voltage (150V), N-Channel FET type, and TO-247-3 through-hole package configuration. The IRFP4568PBF meets or exceeds all electrical performance parameters of the IXTH88N15. Pin-to-pin compatibility is maintained. No circuit modifications are required.

Q: What are the key differences between these two parts?

A: The IRFP4568PBF provides higher continuous drain current (171A vs. 88A), significantly lower on-state resistance (5.9 mOhm vs. 22 mOhm), and greater power dissipation capability (517W vs. 400W). The IRFP4568PBF also features an extended maximum operating temperature (175°C vs. 150°C) and is an active product with ongoing manufacturer support, whereas the IXTH88N15 is obsolete.

Q: Are there any package or mounting differences?

A: No. Both parts use the TO-247-3 through-hole package and are mounted identically. PCB layout and thermal management approaches remain unchanged.

Q: What is the impact of the lower on-state resistance in the IRFP4568PBF?

A: Lower on-state resistance reduces conduction losses during switching operation, resulting in decreased heat generation and improved overall circuit efficiency. This is a performance advantage with no negative implications for substitution.

Q: Does the higher gate charge of the IRFP4568PBF affect circuit design?

A: Gate charge (227 nC vs. 170 nC) influences gate drive requirements and switching speed. The IRFP4568PBF requires slightly more gate charge to achieve full on-state conduction. Existing gate drive circuits designed for the IXTH88N15 remain functional with the IRFP4568PBF; however, switching transient characteristics will differ slightly. Gate drive circuits with adequate current sourcing capability (typically 1-2A minimum) accommodate this difference without modification.

Q: What is the compliance status of both parts?

A: Both the IXTH88N15 and IRFP4568PBF are REACH Unaffected and carry EAR99 ECCN designation. The IRFP4568PBF is additionally RoHS3 compliant. Both parts have Moisture Sensitivity Level 1 (Unlimited).

Q: Why is the IXTH88N15 listed as obsolete?

A: Obsolescence indicates that the manufacturer (IXYS) has discontinued production of this device. While existing inventory may be available through distributors, no new manufacturing runs are planned. The IRFP4568PBF represents the active equivalent for ongoing procurement.