IXTH80N65X2 Equivalent & Substitute Parts

Part Overview

The IXTH80N65X2 is an N-Channel MOSFET manufactured by IXYS, rated for 650V drain-to-source voltage with 80A continuous drain current at 25°C. This device operates in the Ultra X2 series and is housed in a TO-247 through-hole package. The component is actively produced and RoHS3 compliant, making it suitable for high-voltage switching applications requiring robust thermal performance and high current handling capability.

Substitute parts are identified when equivalent electrical and mechanical parameters align within the constraints of this product category, enabling direct replacement in circuit designs without modification to board layout or thermal management infrastructure.

Substiute Parts

IXTH80N65X2
IXYSIn Stock: 1891IXTH80N65X2 Datasheet
IXTH80N65X2
Current Part
IPW65R045C7FKSA1
Infineon TechnologiesIn Stock: 2544IPW65R045C7FKSA1 Datasheet
IPW65R045C7FKSA1
Similar
SCT3030ALGC11
Rohm SemiconductorIn Stock: 1920SCT3030ALGC11 Datasheet
SCT3030ALGC11
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-State Resistance (Rds On Max) 40 mOhm @ 40A, 10V
Gate Charge (Qg Max) 144 nC @ 10V
Power Dissipation (Max) 890 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
FET Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH80N65X2 is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 650V
  • Package Type: TO-247-3 through-hole configuration
  • FET Type: N-Channel
  • Product Status: Active

Performance Compatibility Criteria:

  • Continuous Drain Current (Id): Equal to or greater than 80A
  • On-State Resistance (Rds On): Equal to or lower than 40mOhm
  • Power Dissipation: Equal to or greater than 890W
  • Operating Temperature Range: Minimum -55°C to 150°C

The identified substitute parts meet the voltage and package requirements. However, variations in current rating, on-state resistance, and power dissipation reflect different technology platforms and thermal characteristics that must be evaluated for specific application requirements.

Parameter Comparison

Parameter IXTH80N65X2 IPW65R045C7FKSA1 SCT3030ALGC11 Unit
Manufacturer IXYS Infineon Technologies Rohm Semiconductor -
Series Ultra X2 CoolMOS™ C7 - -
FET Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) SiCFET (Silicon Carbide) -
Drain-to-Source Voltage (Vdss) 650 650 650 V
Continuous Drain Current (Id) @ 25°C 80 46 70 A (Tc)
On-State Resistance (Rds On Max) 40 45 39 mOhm
Gate Charge (Qg Max) 144 93 104 nC @ 10V or 18V
Power Dissipation (Max) 890 227 262 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 -55 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 -
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

IXTH80N65X2 (Primary Component)

The IXTH80N65X2 remains the optimal selection for applications requiring the full 80A continuous drain current specification. This device delivers the highest power dissipation capacity (890W) and is actively produced with full RoHS3 and REACH compliance. Inventory availability is confirmed at 1824 pieces.

IPW65R045C7FKSA1 (Infineon CoolMOS™ C7)

This substitute is suitable for applications where continuous drain current requirements do not exceed 46A. The lower current rating results in reduced power dissipation (227W) and lower gate charge (93nC), which may reduce switching losses in lower-current designs. The device maintains 650V voltage rating and TO-247-3 packaging. RoHS3 and REACH compliance are confirmed. Inventory availability is 2498 pieces. This option is appropriate for current-limited circuit topologies.

SCT3030ALGC11 (Rohm SiCFET)

This substitute employs Silicon Carbide technology and supports 70A continuous drain current with 262W power dissipation. The SiCFET platform offers an extended operating temperature range to 175°C (compared to 150°C for the IXYS device), enabling operation in higher-temperature environments. On-state resistance is 39mOhm, meeting the specification. The device maintains 650V voltage rating and TO-247-3 packaging. RoHS3 and REACH compliance are confirmed. Inventory availability is 1900 pieces. This option is appropriate for high-temperature applications where current requirements are between 70A and 80A.

All three devices are actively produced, RoHS3 compliant, and REACH unaffected, ensuring regulatory compliance and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IPW65R045C7FKSA1 directly replace the IXTH80N65X2 in all applications?

A: The IPW65R045C7FKSA1 is a direct mechanical and electrical substitute only for applications where continuous drain current does not exceed 46A. The lower current rating (46A versus 80A) and reduced power dissipation (227W versus 890W) restrict its use to lower-current circuit designs. Verify circuit current requirements before substitution.

Q: What is the primary advantage of the SCT3030ALGC11 over the IXTH80N65X2?

A: The SCT3030ALGC11 employs Silicon Carbide technology and supports operation at junction temperatures up to 175°C, compared to 150°C for the IXTH80N65X2. This extended temperature capability makes it suitable for high-temperature environments. The continuous drain current rating of 70A is lower than the IXTH80N65X2 (80A), making it appropriate for applications requiring 70A or less at elevated temperatures.

Q: Are all three devices housed in the same package?

A: Yes. The IXTH80N65X2, IPW65R045C7FKSA1, and SCT3030ALGC11 are all housed in TO-247-3 through-hole packages. This ensures mechanical compatibility and identical board layout requirements. No PCB modifications are necessary for physical substitution.

Q: Do all substitute parts meet the same regulatory compliance standards?

A: Yes. The IXTH80N65X2, IPW65R045C7FKSA1, and SCT3030ALGC11 are all RoHS3 compliant and REACH unaffected. All devices carry MSL 1 (Unlimited) moisture sensitivity ratings. Regulatory compliance is maintained across all three options.

Q: What is the key difference in gate charge between these devices?

A: Gate charge varies across the three devices: IXTH80N65X2 (144nC @ 10V), IPW65R045C7FKSA1 (93nC @ 10V), and SCT3030ALGC11 (104nC @ 18V). Lower gate charge reduces switching losses and driver power requirements. The IPW65R045C7FKSA1 exhibits the lowest gate charge, which may reduce overall system power consumption in switching applications.

Q: Can the IXTH80N65X2 be substituted with the SCT3030ALGC11 in a 80A application?

A: The SCT3030ALGC11 is rated for 70A continuous drain current, which is below the 80A requirement of the IXTH80N65X2. Substitution in an 80A application would exceed the device's continuous current rating and is not recommended. Use the SCT3030ALGC11 only in applications where continuous current does not exceed 70A.

Q: What inventory levels are available for each device?

A: Current inventory levels are as follows: IXTH80N65X2 (1824 pieces), IPW65R045C7FKSA1 (2498 pieces), and SCT3030ALGC11 (1900 pieces). All devices are listed as new original stock.

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