IXTH76N25T N-Channel 250V 76A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH76N25T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 250V drain-to-source voltage capability. This device operates in the Trench series and is housed in a TO-247 through-hole package. The part is currently in active production status with 5740 units available in inventory.

Equivalent and substitute parts are identified when alternative components share the same critical electrical specifications and package configuration, enabling direct replacement in circuit designs without modification to PCB layouts or gate drive circuitry.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	76	A
On-State Resistance (Rds On Max) @ 10V	39	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5	V @ 1mA
Gate Charge (Qg Max) @ 10V	92	nC
Power Dissipation (Max)	460	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH76N25T is determined by matching the following critical parameters:

Voltage Rating: Drain-to-source voltage must equal 250V to ensure safe operation within the same circuit topology.

Package Configuration: The TO-247-3 through-hole package must be maintained to preserve PCB footprint compatibility and thermal management characteristics.

Gate Drive Compatibility: Maximum gate-source voltage (Vgs Max) of ±30V and gate threshold voltage (Vgs(th)) specifications must align to ensure compatibility with existing gate drive circuits.

Regulatory Compliance: RoHS3 compliance and REACH unaffected status are required for equivalent substitution in regulated applications.

The IRFP4229PBF meets the voltage rating, package type, and compliance requirements. However, the continuous drain current rating differs significantly (44A versus 76A), which affects thermal performance and current-handling capacity in the application circuit.

Parameter Comparison

Parameter	IXTH76N25T	IRFP4229PBF	Unit
Manufacturer	IXYS	Infineon Technologies
Drain-to-Source Voltage (Vdss)	250	250	V
Continuous Drain Current (Id) @ 25°C	76	44	A
On-State Resistance (Rds On Max) @ 10V	39	46	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5	5	V
Gate Charge (Qg Max) @ 10V	92	110	nC
Power Dissipation (Max)	460	310	W
Operating Temperature Range	-55 to 150	-40 to 175	°C
Package Type	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Vgs (Max)	±30	±30	V

Engineering Selection Recommendations

Primary Selection: The IXTH76N25T remains the preferred component for applications requiring the specified 76A continuous drain current rating and 460W power dissipation capability. This device is in active production status with substantial inventory availability.

Substitution Conditions: The IRFP4229PBF (Infineon Technologies) is electrically compatible at the voltage and package level, meeting identical RoHS3 compliance and REACH unaffected status. Both devices operate within compatible gate drive voltage ranges (±30V maximum).

Application Limitations: The IRFP4229PBF exhibits reduced current-handling capacity (44A versus 76A) and lower maximum power dissipation (310W versus 460W). Substitution is valid only in applications where the circuit design operates below 44A continuous drain current and does not exceed 310W power dissipation. The higher on-state resistance (46mOhm versus 39mOhm) results in increased conduction losses.

Thermal Considerations: The IRFP4229PBF supports an extended upper operating temperature limit (175°C versus 150°C), which may provide marginal thermal margin in high-temperature environments despite lower power dissipation rating.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4229PBF directly replace the IXTH76N25T in all applications?

A: Direct replacement is valid only when the application circuit operates at continuous drain currents not exceeding 44A and power dissipation does not exceed 310W. The IXTH76N25T is rated for 76A continuous current and 460W dissipation. Applications designed for the full 76A rating require the original IXTH76N25T.

Q: Are the TO-247-3 packages from both manufacturers mechanically identical?

A: Both devices use the TO-247-3 through-hole package configuration, ensuring identical PCB footprint compatibility and mounting characteristics. Pin assignments and thermal pad dimensions are equivalent.

Q: What is the impact of the 7mOhm difference in on-state resistance?

A: The IRFP4229PBF exhibits 46mOhm on-state resistance compared to 39mOhm for the IXTH76N25T. At equivalent current levels, this results in proportionally higher conduction losses and heat generation. The impact scales with operating current; at 44A, the difference becomes significant for thermal management calculations.

Q: Do both devices require identical gate drive circuitry?

A: Yes. Both devices share identical maximum gate-source voltage (±30V) and gate threshold voltage specifications (5V @ 1mA). Gate drive circuits designed for the IXTH76N25T operate without modification on the IRFP4229PBF. The higher gate charge (110nC versus 92nC) for the IRFP4229PBF requires marginally more gate drive energy but remains within standard driver capabilities.

Q: Are there temperature range considerations for substitution?

A: The IXTH76N25T operates from -55°C to 150°C, while the IRFP4229PBF operates from -40°C to 175°C. Applications requiring operation below -40°C require the IXTH76N25T. The IRFP4229PBF provides extended high-temperature capability but is limited by its lower power dissipation rating.

Q: What compliance certifications apply to both devices?

A: Both the IXTH76N25T and IRFP4229PBF are ROHS3 compliant and REACH unaffected. Both carry EAR99 export classification and identical HTSUS commodity codes (8541.29.0095). Moisture sensitivity level is 1 (unlimited) for both devices.

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