IXTH75N10L2 N-Channel MOSFET 100V 75A TO-247 Equivalent & Substitute Parts

Part Overview

The IXTH75N10L2 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by IXYS, rated for 100V drain-to-source voltage and 75A continuous drain current at 25°C. This device is housed in a Through Hole TO-247 package and is designed for high-power switching applications requiring robust thermal performance and reliable gate control characteristics.

The IXTH75N10L2 maintains Active product status with full RoHS3 compliance and REACH unaffected classification. Equivalent and substitute parts are identified based on matching electrical specifications including voltage rating, current capacity, package type, and thermal characteristics. Alternative devices may be required due to inventory constraints, supply chain considerations, or specific application requirements within the defined electrical parameter envelope.

Substiute Parts

IXTH75N10L2

IXYSIn Stock: 1076IXTH75N10L2 Datasheet

Current PartRFQ

APT10M19BVRG

Microchip TechnologyIn Stock: 895APT10M19BVRG Datasheet

SimilarRFQ

HUF75652G3

onsemiIn Stock: 2081HUF75652G3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTH75N10L2 are qualified based on the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 100V
• Continuous Drain Current (Id) @ 25°C: 75A (Tc)
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Type: TO-247 (Through Hole)
• Package Configuration: TO-247-3

Allowable Parameter Variation: Substitute devices must maintain the same voltage and current ratings. Variations in on-state resistance (Rds On), gate charge (Qg), input capacitance (Ciss), and power dissipation are acceptable provided the substitute part meets or exceeds the performance envelope of the primary device. Gate threshold voltage (Vgs(th)) may vary within standard MOSFET tolerances. Operating temperature range may extend beyond the primary device specification.

Identified Substitutes:

• APT10M19BVRG (Microchip Technology POWER MOS V®)
• HUF75652G3 (onsemi UltraFET™)

Both substitute parts satisfy all mandatory matching criteria and are qualified for direct functional replacement in applications designed for the IXTH75N10L2.

Parameter Comparison

Engineering Selection Recommendations

IXTH75N10L2 (IXYS Linear L2™ Series)

Primary device selection when IXYS component qualification is required. Active product status with established supply chain. RoHS3 compliant and REACH unaffected. Suitable for applications requiring 400W maximum power dissipation and operation within -55°C to 150°C temperature range.

APT10M19BVRG (Microchip Technology POWER MOS V® Series)

Direct substitute when Microchip component qualification is required or IXYS devices are unavailable. Active product status with 835 units in stock. RoHS3 compliant and REACH unaffected. Delivers improved on-state resistance (19 mOhm vs. 21 mOhm) with lower input capacitance (6120 pF vs. 8100 pF), resulting in reduced switching losses. Gate charge specification (300 nC) is higher than primary device, requiring evaluation of gate driver capability.

HUF75652G3 (onsemi UltraFET™ Series)

Premium substitute option offering superior electrical performance. Active product status with highest inventory availability (2027 units in stock). RoHS3 compliant and REACH unaffected. Delivers significantly lower on-state resistance (8 mOhm vs. 21 mOhm), enabling reduced conduction losses and improved thermal efficiency. Extended operating temperature range (-55°C to 175°C) supports applications requiring higher junction temperature operation. Higher power dissipation rating (515W vs. 400W) provides additional thermal margin. Gate charge (475 nC @ 20V) and input capacitance (7585 pF) require gate driver evaluation for switching frequency compatibility.

All three devices are Active products with full regulatory compliance. Selection between substitutes depends on specific application requirements for on-state resistance, switching characteristics, thermal performance, and component qualification standards.

Frequently Asked Questions (FAQ)

Q: Can the APT10M19BVRG replace the IXTH75N10L2 in existing circuit designs?

A: Yes. Both devices share identical voltage (100V Vdss) and current (75A Id) ratings, N-Channel MOSFET technology, and TO-247-3 package configuration. The APT10M19BVRG exhibits lower on-state resistance (19 mOhm vs. 21 mOhm) and reduced input capacitance (6120 pF vs. 8100 pF). Gate charge is higher (300 nC vs. 215 nC), requiring verification that the gate driver circuit can supply the additional charge within the required switching time window.

Q: What are the advantages of the HUF75652G3 over the IXTH75N10L2?

A: The HUF75652G3 provides significantly lower on-state resistance (8 mOhm vs. 21 mOhm), reducing conduction losses and heat generation. Power dissipation rating is higher (515W vs. 400W), and operating temperature range extends to 175°C. These characteristics result in improved thermal performance and efficiency. Gate charge (475 nC @ 20V) is substantially higher, requiring gate driver circuit evaluation for compatibility with switching frequency and timing requirements.

Q: Are all three devices pin-compatible?

A: Yes. All three devices use the TO-247-3 package with identical pin configuration: Gate (pin 1), Drain (pin 2), and Source (pin 3). Physical mounting and PCB layout are directly compatible without modification.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) determines the total charge the gate driver must supply to switch the MOSFET. The IXTH75N10L2 requires 215 nC @ 10V, the APT10M19BVRG requires 300 nC @ 10V, and the HUF75652G3 requires 475 nC @ 20V. Higher gate charge increases switching time and power dissipation in the gate driver circuit. Gate driver output current and supply voltage must be sufficient to deliver the required charge within the application's switching frequency and timing constraints.

Q: How do input capacitance differences affect switching performance?

A: Input capacitance (Ciss) affects the voltage rise time at the gate during switching transitions. The IXTH75N10L2 has 8100 pF @ 25V, the APT10M19BVRG has 6120 pF @ 25V, and the HUF75652G3 has 7585 pF @ 25V. Lower input capacitance reduces the charge required for gate voltage transitions, enabling faster switching and reduced switching losses. Gate driver output impedance and current capability determine the actual switching speed achieved.

Q: Are there thermal performance differences between the three devices?

A: Yes. The HUF75652G3 has the lowest on-state resistance (8 mOhm), resulting in the lowest conduction losses at rated current. The IXTH75N10L2 and APT10M19BVRG have higher on-state resistance (21 mOhm and 19 mOhm respectively), generating more heat during continuous operation. The HUF75652G3 also has a higher power dissipation rating (515W vs. 400W) and extended temperature range (-55°C to 175°C vs. -55°C to 150°C), providing greater thermal margin in high-temperature applications.

Q: Do all devices meet the same regulatory and compliance standards?

A: Yes. All three devices are RoHS3 compliant and REACH unaffected. All carry Active product status from their respective manufacturers. ECCN and HTSUS classifications are identical across all three parts, ensuring equivalent regulatory treatment for export and procurement purposes.

Q: What inventory considerations should influence part selection?

A: Current inventory levels are: IXTH75N10L2 (971 units), APT10M19BVRG (835 units), and HUF75652G3 (2027 units). The HUF75652G3 has the highest availability. For applications requiring immediate delivery or high-volume production, inventory status may influence substitute selection when electrical performance requirements are met by multiple candidates.