IXTH75N10 N-Channel MOSFET 100V 75A TO-247 Equivalent & Substitute Parts

Part Overview

The IXTH75N10 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 75A continuous drain current at 25°C. This device is packaged in a TO-247 through-hole configuration and is part of the MegaMOS™ series. The part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	20 mOhm @ 37.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 4mA
Gate Charge (Qg Max) @ Vgs	260	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IXTH75N10 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 75A or greater at 25°C
Package Type: TO-247 through-hole configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 4V to 5V range
Maximum Gate-Source Voltage (Vgs Max): ±20V
Operating Temperature Range: Minimum -55°C to 150°C

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (100V, 75A): Parts matching the exact voltage and current ratings with compatible on-state resistance and gate characteristics. These include APT10M19BVRG, APT10M25BVRG, and HUF75652G3.

Category B – Enhanced Performance Alternatives (100V, Higher Current or Lower Rds On): Parts exceeding the 75A current rating or offering superior on-state resistance characteristics while maintaining 100V voltage rating. These include IXFH110N10P and FDH3632.

Category C – Higher Voltage Alternatives (150V, Similar Current): Parts with elevated voltage ratings suitable for applications requiring additional voltage margin. This includes IXFH76N15T2.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
IXTH75N10	IXYS	100	75	20 @ 37.5A, 10V	4 @ 4mA	260 @ 10V	4500 @ 25V	300	-55 to 150	TO-247-3	Not For New Designs
IXFH110N10P	IXYS	100	110	15 @ 500mA, 10V	5 @ 4mA	110 @ 10V	3550 @ 25V	480	-55 to 175	TO-247-3	Active
IXFH76N15T2	IXYS	150	76	22 @ 38A, 10V	4.5 @ 250µA	97 @ 10V	5800 @ 25V	350	-55 to 175	TO-247-3	Active
APT10M19BVRG	Microchip Technology	100	75	19 @ 500mA, 10V	4 @ 1mA	300 @ 10V	6120 @ 25V	—	—	TO-247-3	Active
APT10M25BVRG	Microchip Technology	100	75	25 @ 500mA, 10V	4 @ 1mA	225 @ 10V	5160 @ 25V	—	—	TO-247-3	Active
FDH3632	onsemi	100	80	9 @ 80A, 10V	4 @ 250µA	110 @ 10V	6000 @ 25V	310	-55 to 175	TO-247-3	Active
HUF75639G3	onsemi	100	56	25 @ 56A, 10V	4 @ 250µA	130 @ 20V	2000 @ 25V	200	-55 to 175	TO-247-3	Active
HUF75652G3	onsemi	100	75	8 @ 75A, 10V	4 @ 250µA	475 @ 20V	7585 @ 25V	515	-55 to 175	TO-247-3	Active
IRFP140PBF	Vishay Siliconix	100	31	77 @ 19A, 10V	4 @ 250µA	72 @ 10V	1700 @ 25V	180	-55 to 175	TO-247-3	Active
IRFP150PBF	Vishay Siliconix	100	41	55 @ 25A, 10V	4 @ 250µA	140 @ 10V	2800 @ 25V	230	-55 to 175	TO-247-3	Active

Engineering Selection Recommendations

For Direct Replacement (100V, 75A Rating):

The HUF75652G3 (onsemi, UltraFET™ series) provides the closest electrical match to the IXTH75N10 with identical voltage and current ratings. This part is Active status, RoHS3 compliant, and offers superior on-state resistance (8 mOhm vs. 20 mOhm), resulting in lower power dissipation and improved thermal performance. The extended operating temperature range (-55°C to 175°C) exceeds the original part specification.

The APT10M19BVRG and APT10M25BVRG (Microchip Technology, POWER MOS V® series) are Active status alternatives with 100V/75A ratings. Both are RoHS3 compliant. The APT10M19BVRG offers slightly lower on-state resistance (19 mOhm) compared to the original specification.

For Enhanced Performance (100V, Higher Current Capability):

The IXFH110N10P (IXYS, HiPerFET™ series) is an Active status part offering 110A continuous drain current at the same 100V rating. This part provides 33% higher current capacity with superior on-state resistance (15 mOhm) and significantly lower gate charge (110 nC vs. 260 nC), enabling faster switching. Extended temperature range (-55°C to 175°C) and higher power dissipation (480W) support demanding applications.

The FDH3632 (onsemi, PowerTrench® series) is an Active status part rated for 80A at 100V with exceptional on-state resistance (9 mOhm). This part delivers the lowest on-state resistance among all substitutes, minimizing conduction losses. Power dissipation capability (310W) and extended temperature range (-55°C to 175°C) support high-current applications.

For Higher Voltage Applications (150V Rating):

The IXFH76N15T2 (IXYS, HiPerFET™ TrenchT2™ series) is an Active status part rated for 150V/76A, suitable for applications requiring additional voltage margin. On-state resistance (22 mOhm) and gate charge (97 nC) are comparable to the original specification. Extended temperature range (-55°C to 175°C) and higher power dissipation (350W) support thermal-demanding designs.

Compliance and Certification:

All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The original IXTH75N10 is classified as "Not For New Designs," making Active status alternatives preferable for new product development.

Frequently Asked Questions (FAQ)

Q: Can the HUF75652G3 directly replace the IXTH75N10 in existing designs?

A: Yes. Both parts share identical voltage (100V) and current (75A) ratings, matching gate threshold voltage (4V), and compatible gate-source voltage limits (±20V). Both use TO-247-3 through-hole packaging. The HUF75652G3 offers superior on-state resistance (8 mOhm vs. 20 mOhm), resulting in lower power dissipation. Thermal design may require adjustment due to higher power dissipation capability (515W vs. 300W).

Q: What is the difference between the APT10M19BVRG and APT10M25BVRG?

A: Both parts are rated for 100V/75A with identical voltage and current specifications. The primary difference is on-state resistance: APT10M19BVRG offers 19 mOhm (lower) versus APT10M25BVRG at 25 mOhm (higher). Gate charge also differs: APT10M19BVRG at 300 nC versus APT10M25BVRG at 225 nC. Selection depends on whether lower conduction loss (APT10M19BVRG) or lower switching loss (APT10M25BVRG) is prioritized.

Q: Why does the IXFH110N10P have lower gate charge than the IXTH75N10 despite higher current rating?

A: Gate charge (Qg) is a device-specific characteristic determined by semiconductor design and process technology. The IXFH110N10P uses HiPerFET™ technology with optimized gate structure, resulting in 110 nC gate charge at 10V compared to 260 nC for the IXTH75N10. Lower gate charge enables faster switching transitions and reduced driver power requirements.

Q: Is the IXFH76N15T2 suitable as a substitute if my application operates below 100V?

A: Yes. The IXFH76N15T2 is rated for 150V maximum drain-to-source voltage, meaning it operates safely at 100V and below. The higher voltage rating provides additional design margin for transient overvoltage conditions. On-state resistance (22 mOhm) and current rating (76A) are comparable to the original IXTH75N10, making it functionally compatible for applications operating within 100V limits.

Q: What is the significance of the TO-247-3 package designation?

A: TO-247-3 is a through-hole power package with three leads: Gate, Drain, and Source. All substitute parts listed use this identical package, ensuring mechanical and electrical compatibility with existing PCB layouts and mounting hardware. The "-3" designation confirms three-lead configuration, distinguishing it from other TO-247 variants.

Q: Can I use the IRFP150PBF as a substitute for the IXTH75N10?

A: The IRFP150PBF shares the same 100V voltage rating and TO-247-3 package, but is rated for only 41A continuous drain current, which is significantly below the 75A requirement of the IXTH75N10. This part is unsuitable for applications requiring the full 75A current capacity. Use only if your application current requirement is 41A or lower.

Q: What does "Not For New Designs" status mean for the IXTH75N10?

A: "Not For New Designs" indicates the manufacturer (IXYS) has discontinued active development and recommends against using this part in new product designs. Existing inventory may remain available, but long-term supply is not guaranteed. Active status alternatives (such as HUF75652G3, IXFH110N10P, or FDH3632) are recommended for new designs to ensure sustained supply and manufacturer support.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on three primary factors: (1) Current requirement—if your application requires exactly 75A, use HUF75652G3, APT10M19BVRG, or APT10M25BVRG; if higher current capacity is beneficial, use IXFH110N10P or FDH3632. (2) Thermal performance—if minimizing conduction losses is critical, prioritize parts with lower on-state resistance (FDH3632 at 9 mOhm or HUF75652G3 at 8 mOhm). (3) Switching speed—if fast switching is required, select parts with lower gate charge (IXFH110N10P at 110 nC or IXFH76N15T2 at 97 nC).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant and REACH unaffected, meeting current environmental regulations for lead-free manufacturing and hazardous substance restrictions.

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