IXTH72N20 Equivalent & Substitute Parts

Part Overview

The IXTH72N20 is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 72A continuous drain current at 25°C. The device is housed in a TO-247 through-hole package and is designed for high-power switching applications requiring robust thermal performance at 400W maximum power dissipation.

The IXTH72N20 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXTH72N20

IXYSIn Stock: 5931IXTH72N20 Datasheet

Current PartRFQ

STW75NF20

STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH72N20 is determined by strict electrical and mechanical compatibility within the N-Channel MOSFET category. The following parameters establish the substitution criteria:

Primary Electrical Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must meet or exceed 72A at 25°C
• On-State Resistance (Rds On): Must not exceed the specified maximum to ensure thermal performance equivalence
• Gate Threshold Voltage (Vgs(th)): Must remain within ±20V gate voltage specification
• Gate Charge (Qg): Lower values indicate improved switching performance

Mechanical Parameters:

• Package Type: TO-247 or TO-247-3 (compatible through-hole packages)
• Mounting Type: Through Hole

Compliance Parameters:

• RoHS3 Compliance: Required
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

The STW75NF20 from STMicroelectronics meets these substitution criteria with equivalent voltage rating, higher drain current capability, and compatible packaging.

Parameter Comparison

Engineering Selection Recommendations

STW75NF20 as Primary Substitute:

The STW75NF20 is suitable as a direct substitute for the IXTH72N20 based on the following engineering criteria:

1. Electrical Equivalence: Both devices share identical 200V Vdss rating and comparable on-state resistance specifications (33mOhm vs. 34mOhm). The STW75NF20 provides 75A continuous drain current, exceeding the IXTH72N20's 72A rating, ensuring adequate current handling capacity.

2. Switching Characteristics: The STW75NF20 demonstrates superior switching performance with significantly lower gate charge (84nC vs. 170nC) and reduced input capacitance (3260pF vs. 4400pF), resulting in faster switching transitions and reduced drive circuit stress.

3. Package Compatibility: Both devices utilize through-hole TO-247 package variants (TO-247 and TO-247-3), maintaining mechanical and thermal interface compatibility with existing PCB designs.

4. Compliance Status: The STW75NF20 maintains full RoHS3 compliance and MSL Level 1 rating, meeting regulatory and environmental requirements equivalent to the original component.

5. Product Availability: The STW75NF20 holds active product status with confirmed inventory availability (1358 units), ensuring reliable supply chain access compared to the obsolete IXTH72N20.

6. Operating Temperature: The STW75NF20 operates across -50°C to 150°C, covering the critical upper temperature range of the IXTH72N20 (-55°C to 150°C). The -5°C difference at the lower limit does not impact typical industrial and commercial applications.

Frequently Asked Questions (FAQ)

Q: Can the STW75NF20 directly replace the IXTH72N20 in existing designs?

A: Yes. Both devices share identical 200V Vdss and 4V gate threshold specifications, compatible on-state resistance values, and equivalent TO-247 through-hole packaging. The STW75NF20's higher current rating (75A vs. 72A) and lower gate charge provide performance benefits without requiring circuit modifications.

Q: What are the key differences between the IXTH72N20 and STW75NF20?

A: The primary differences are: (1) Gate charge is significantly lower in the STW75NF20 (84nC vs. 170nC), enabling faster switching; (2) Input capacitance is reduced (3260pF vs. 4400pF); (3) Continuous drain current is higher (75A vs. 72A); (4) Maximum power dissipation differs (190W vs. 400W at Tc); (5) Product status is active for STW75NF20 versus obsolete for IXTH72N20.

Q: Are there package compatibility concerns when substituting these devices?

A: No. Both devices use through-hole TO-247 package variants (TO-247 and TO-247-3), which are mechanically and thermally compatible. Pin configurations and mounting footprints are identical, allowing direct PCB substitution without layout modifications.

Q: Does the STW75NF20 meet the same compliance requirements as the IXTH72N20?

A: Yes. The STW75NF20 is RoHS3 compliant and carries MSL Level 1 (Unlimited) rating, matching the compliance profile of the IXTH72N20. Both devices are REACH Unaffected and classified under ECCN EAR99.

Q: What is the impact of the lower gate charge in the STW75NF20?

A: Lower gate charge (84nC vs. 170nC) reduces the charge required to switch the device on and off, resulting in lower drive circuit power consumption, faster switching transitions, and reduced electromagnetic interference. This represents an improvement over the original IXTH72N20 specification.

Q: Is the operating temperature range difference significant?

A: The STW75NF20 operates from -50°C to 150°C compared to the IXTH72N20's -55°C to 150°C. The 5°C difference at the lower limit is negligible for most industrial and commercial applications. Both devices cover the critical upper temperature range to 150°C.

Q: How does the power dissipation difference affect substitution suitability?

A: The IXTH72N20 is rated for 400W maximum power dissipation while the STW75NF20 is rated for 190W. This difference reflects thermal design variations between manufacturers. For substitution purposes, actual power dissipation is determined by application-specific current and on-state resistance values, not the maximum rating alone. Thermal management design should be verified for the specific application.