IXTH6N90 N-Channel 900V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH6N90 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 900V drain-to-source voltage with 6A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247 through-hole package and dissipates up to 180W at the case temperature. The IXTH6N90 is classified as obsolete product status, making identification of equivalent and substitute components necessary for ongoing system support, design updates, and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	6	A
On-State Resistance (Rds On Max) @ 500mA, 10V	1.8	Ω
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	V
Gate Charge (Qg Max) @ 10V	130	nC
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTH6N90 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 900V
Continuous Drain Current (Id): Must equal or exceed 6A at 25°C
Package Type: Must be TO-247-3 through-hole configuration
Operating Temperature Range: Must encompass -55°C to 150°C
Gate Drive Voltage: Must be compatible with 10V drive specification

Acceptable Variation Parameters:

On-State Resistance (Rds On): Lower values are acceptable and indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide design margin
Gate Threshold Voltage (Vgs(th)): Minor variations within ±1V are acceptable for circuit compatibility

Substitute parts must maintain electrical compatibility within the application circuit while meeting or exceeding the performance envelope of the original IXTH6N90 device.

Parameter Comparison

Parameter	IXTH6N90	STW7NK90Z	STW9NK90Z	STW11NK90Z	IRFPF50	FQH8N100C
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	Vishay Siliconix	onsemi
Vdss (V)	900	900	900	900	900	1000
Id @ 25°C (A)	6	5.8	8	9.2	6.7	8
Rds On Max @ 10V (Ω)	1.8 @ 500mA	2 @ 2.9A	1.3 @ 3.6A	0.98 @ 4.6A	1.6 @ 4A	1.45 @ 4A
Vgs(th) Max @ 250µA (V)	4.5	4.5	4.5	4.5	4	5
Qg Max @ 10V (nC)	130	60.5	72	115	200	70
Power Dissipation Max (W)	180	140	160	200	190	225
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Recommended):

The STMicroelectronics SuperMESH™ series devices (STW7NK90Z, STW9NK90Z, STW11NK90Z) are the preferred substitutes for the IXTH6N90. All three devices are active products with ROHS3 compliance, matching the original part's environmental certifications. These devices maintain the 900V Vdss rating and -55°C to 150°C operating temperature range. The STW9NK90Z offers the closest performance match with 8A continuous drain current, lower on-state resistance (1.3Ω), and reduced gate charge (72 nC), providing direct functional replacement with improved efficiency characteristics.

Secondary Substitutes:

The Vishay Siliconix IRFPF50 maintains 900V Vdss and 6.7A drain current ratings within the TO-247-3 package. However, this device carries non-compliant RoHS status, limiting its use in applications requiring regulatory compliance. The onsemi FQH8N100C provides higher voltage rating (1000V) and current capability (8A) with ROHS3 compliance and active product status, suitable for applications requiring design margin above the original 900V specification.

Compliance Considerations:

All recommended substitutes maintain REACH unaffected status and EAR99 export classification consistent with the original IXTH6N90. The IRFPF50 should be avoided in new designs or compliance-sensitive applications due to RoHS non-compliance status. For procurement of replacement components in existing systems, STMicroelectronics devices offer the highest availability and active product support.

Frequently Asked Questions (FAQ)

Q: Can the STW7NK90Z directly replace the IXTH6N90 in existing circuit boards?

A: The STW7NK90Z is mechanically and electrically compatible with the IXTH6N90 in TO-247-3 through-hole applications. Both devices share identical 900V Vdss rating, compatible gate threshold voltage (4.5V), and matching operating temperature range (-55°C to 150°C). The STW7NK90Z has slightly lower continuous drain current (5.8A versus 6A), which is acceptable for applications operating below maximum current specifications. No circuit modifications are required.

Q: What is the difference between STW9NK90Z and STW11NK90Z?

A: Both devices are STMicroelectronics SuperMESH™ series MOSFETs with 900V Vdss rating and TO-247-3 packaging. The STW11NK90Z provides higher continuous drain current (9.2A versus 8A) and lower on-state resistance (0.98Ω versus 1.3Ω), resulting in reduced power dissipation and improved thermal performance. The STW9NK90Z offers a closer current match to the original IXTH6N90 (8A versus 6A) with lower gate charge (72 nC versus 115 nC), reducing switching losses. Selection depends on whether the application prioritizes current capacity or switching efficiency.

Q: Why is the FQH8N100C rated for 1000V instead of 900V?

A: The FQH8N100C is a higher voltage-rated device designed for applications requiring voltage margin above 900V. The 1000V Vdss rating provides additional safety margin in circuits subject to voltage transients or overshoot conditions. This device is fully compatible with 900V applications and can be used as a direct substitute. The higher voltage rating does not negatively impact circuit performance in 900V applications.

Q: Is the IRFPF50 suitable for new product designs?

A: The IRFPF50 is electrically compatible with the IXTH6N90, maintaining 900V Vdss and providing 6.7A continuous drain current in TO-247-3 packaging. However, the IRFPF50 carries RoHS non-compliant status, making it unsuitable for applications subject to RoHS regulations or customer compliance requirements. For new designs, STMicroelectronics or onsemi alternatives with ROHS3 compliance are recommended.

Q: What are the thermal implications of substituting with a higher-rated device?

A: Devices with higher power dissipation ratings (such as STW11NK90Z at 200W or FQH8N100C at 225W versus IXTH6N90 at 180W) provide improved thermal headroom in the same TO-247-3 package. Lower on-state resistance values in substitute devices reduce I²R losses, decreasing junction temperature rise during operation. These characteristics improve reliability and extend component life in thermally constrained applications. No negative thermal effects result from substitution with higher-rated devices.

Q: Are there any gate drive voltage compatibility issues?

A: All substitute devices are specified for 10V gate drive voltage, matching the IXTH6N90 specification. Gate threshold voltages range from 4V to 5V across all devices, remaining within acceptable tolerance for standard gate driver circuits. No modifications to gate drive circuitry are required when substituting any of the listed devices.

Q: What is the inventory status for substitute parts?

A: STW9NK90Z has the highest inventory availability (19,260 pieces), followed by STW7NK90Z (2,086 pieces) and STW11NK90Z (1,771 pieces). The onsemi FQH8N100C has 1,473 pieces in stock, and the Vishay IRFPF50 has 1,250 pieces available. All substitute devices are in active production with established supply chains, ensuring long-term availability for ongoing system support.

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