IXTH6N80A N-Channel 800V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH6N80A is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in a Through Hole TO-247 configuration and is designed for high-voltage switching applications requiring 180W maximum power dissipation.

The IXTH6N80A is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXTH6N80A

IXYSIn Stock: 965IXTH6N80A Datasheet

Current PartRFQ

STP7N80K5

STMicroelectronicsIn Stock: 1406STP7N80K5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTH6N80A are identified based on electrical and mechanical compatibility within the N-Channel MOSFET category. The substitution criteria are strictly defined by the following parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 800V
• Continuous Drain Current (Id) @ 25°C: 6A minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Operating Temperature Range: -55°C to 150°C minimum
• Through Hole Mounting Type

Allowable Variation Parameters:

• Rds On (Max): Equal to or lower than 1.4 Ohm @ 3A, 10V
• Gate Charge (Qg): Lower values acceptable
• Input Capacitance (Ciss): Lower values acceptable
• Power Dissipation (Max): Equal to or higher than 180W
• Package Configuration: TO-220 or TO-247 Through Hole packages
• Gate Voltage (Vgs): Equal to or higher than ±20V

Substitute parts must maintain electrical performance within the specified operating envelope while accommodating minor package form factor differences that do not compromise circuit board integration.

Parameter Comparison

Engineering Selection Recommendations

STP7N80K5 as Primary Substitute:

The STP7N80K5 manufactured by STMicroelectronics qualifies as a functional substitute for the IXTH6N80A based on the following engineering criteria:

Electrical Compatibility:

• Matches the 800V Vdss rating and 6A continuous drain current specification
• Provides superior on-resistance performance (1.2 Ohm vs. 1.4 Ohm @ 3A, 10V), resulting in lower conduction losses
• Demonstrates significantly lower gate charge (13.4 nC vs. 130 nC), enabling faster switching transitions
• Maintains identical operating temperature range (-55°C to 150°C)
• Supports higher maximum gate voltage (±30V vs. ±20V), providing enhanced gate drive margin

Regulatory and Compliance Status:

• Both devices maintain ROHS3 compliance
• Both devices carry REACH Unaffected status
• Both devices are classified under identical HTSUS code (8541.29.0095)

Product Availability:

• The STP7N80K5 is classified as Active, ensuring ongoing supply chain availability
• The IXTH6N80A is classified as Obsolete, necessitating transition to alternative sources

Package Consideration:

• The STP7N80K5 utilizes TO-220-3 packaging versus the IXTH6N80A TO-247-3 packaging
• Both are Through Hole configurations with compatible pinout (Gate, Drain, Source)
• PCB layout modification is required to accommodate the different package footprint

Power Dissipation Trade-off:

• The STP7N80K5 specifies 110W maximum power dissipation versus 180W for the IXTH6N80A
• Applications requiring thermal performance above 110W must implement enhanced thermal management or evaluate alternative substitutes with higher power ratings

Frequently Asked Questions (FAQ)

Q: Can the STP7N80K5 directly replace the IXTH6N80A without circuit modification?

A: The STP7N80K5 provides electrical equivalence in terms of voltage rating, current rating, and operating temperature range. However, the package transition from TO-247-3 to TO-220-3 requires PCB layout modification. The pinout remains compatible (Gate, Drain, Source). Thermal management design must account for the reduced power dissipation rating (110W vs. 180W).

Q: What are the key electrical advantages of the STP7N80K5 substitute?

A: The STP7N80K5 offers lower on-resistance (1.2 Ohm vs. 1.4 Ohm), significantly reduced gate charge (13.4 nC vs. 130 nC), and lower input capacitance (360 pF vs. 2800 pF). These characteristics result in reduced conduction losses, faster switching speed, and lower gate drive power requirements.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices maintain identical regulatory status: ROHS3 compliant, REACH unaffected, and classified under the same HTSUS code. No compliance barriers exist for substitution.

Q: What is the primary limitation of the STP7N80K5 as a substitute?

A: The maximum power dissipation rating is reduced from 180W to 110W. Applications operating at thermal limits near 180W require thermal design review or alternative substitute evaluation. The package transition from TO-247 to TO-220 also necessitates PCB layout modification.

Q: Is the STP7N80K5 available in the same packaging as the IXTH6N80A?

A: No. The IXTH6N80A uses TO-247-3 packaging, while the STP7N80K5 uses TO-220-3 packaging. Both are Through Hole configurations with identical pinout, but the physical footprint differs. PCB redesign is required for package accommodation.

Q: What is the gate charge significance when comparing these devices?

A: Gate charge (Qg) directly impacts switching speed and gate drive circuit power consumption. The STP7N80K5 exhibits substantially lower gate charge (13.4 nC vs. 130 nC), enabling faster switching transitions and reducing gate driver power dissipation. This is advantageous for high-frequency switching applications.

Q: Can the STP7N80K5 be used in applications requiring the full 180W power dissipation of the IXTH6N80A?

A: No. The STP7N80K5 is rated for 110W maximum power dissipation. Applications requiring sustained operation above 110W must implement enhanced thermal management (heat sinking, forced convection cooling) or select alternative substitutes with higher power ratings.

Q: Are there any gate voltage differences that affect circuit design?

A: The STP7N80K5 supports ±30V maximum gate voltage compared to ±20V for the IXTH6N80A. This provides additional gate drive margin and is not a limitation. Existing gate drive circuits designed for ±20V operation remain compatible.