IXTH6N120 N-Channel 1200V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH6N120 is an N-Channel MOSFET manufactured by IXYS, rated for 1200V drain-to-source voltage with 6A continuous drain current at 25°C. This device is housed in a Through Hole TO-247 package and is designed for high-voltage switching applications requiring robust thermal performance up to 300W. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the constraints of application voltage, current, and thermal requirements, while maintaining compatible package specifications and regulatory compliance.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	1200	V
Continuous Drain Current (Id) @ 25°C	6	A
On-State Resistance (Rds On) @ 3A, 10V	2.6	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTH6N120 is constrained by the following critical parameters:

Voltage Rating: The main part operates at 1200V Vdss. Substitute parts must maintain equal or greater voltage rating to ensure safe operation in the intended application circuit.

Current Rating: Continuous drain current of 6A at 25°C establishes the minimum current-handling requirement. Substitute parts with equal or greater current capacity are acceptable.

On-State Resistance: The Rds On specification of 2.6 Ohm at 3A, 10V determines conduction losses. Substitute parts with equal or lower Rds On values maintain or improve efficiency.

Package Compatibility: The TO-247-3 Through Hole package is mandatory for mechanical and thermal interface compatibility with existing PCB designs.

Regulatory Compliance: RoHS3 compliance and REACH Unaffected status are required for supply chain and environmental standards.

The STW7NK90Z from STMicroelectronics is listed as a substitute; however, this part operates at 900V Vdss, which is below the 1200V rating of the main part. This substitute is suitable only for applications where the circuit voltage requirement does not exceed 900V.

Parameter Comparison

Parameter	IXTH6N120	STW7NK90Z	Unit
Manufacturer	IXYS	STMicroelectronics	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	1200	900	V
Continuous Drain Current (Id) @ 25°C	6	5.8	A
On-State Resistance (Rds On)	2.6 @ 3A, 10V	2 @ 2.9A, 10V	Ohm
Gate Threshold Voltage (Vgs(th))	5 @ 250µA	4.5 @ 100µA	V
Gate Charge (Qg) @ 10V	56	60.5	nC
Input Capacitance (Ciss) @ 25V	1950	1350	pF
Power Dissipation (Max)	300	140	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-247-3	TO-247-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

Primary Application Requirement: The IXTH6N120 is specified for 1200V operation. Selection of the STW7NK90Z as a substitute is limited to circuits where the maximum applied drain-to-source voltage does not exceed 900V. Exceeding this voltage rating will result in device failure.

Current Capacity: Both parts support continuous drain currents within 0.2A of each other (6A vs. 5.8A). Current-limited applications will not distinguish between these parts.

Thermal Performance: The IXTH6N120 dissipates up to 300W, while the STW7NK90Z is rated for 140W maximum. Applications requiring sustained power dissipation above 140W must use the IXTH6N120.

On-State Losses: The STW7NK90Z exhibits lower Rds On (2 Ohm vs. 2.6 Ohm), resulting in reduced conduction losses in low-voltage applications.

Regulatory Compliance: Both parts maintain RoHS3 compliance and REACH Unaffected status, satisfying environmental and supply chain requirements.

Product Status: Both parts are Active, ensuring continued availability and support.

Frequently Asked Questions (FAQ)

Q: Can the STW7NK90Z replace the IXTH6N120 in all applications?

A: No. The STW7NK90Z is rated for 900V maximum Vdss, while the IXTH6N120 operates at 1200V. Substitution is valid only for circuits where the applied voltage does not exceed 900V. Using the STW7NK90Z in a 1200V circuit will cause immediate device failure.

Q: What is the difference in on-state resistance between these parts?

A: The STW7NK90Z has lower Rds On (2 Ohm at 2.9A, 10V) compared to the IXTH6N120 (2.6 Ohm at 3A, 10V). This results in lower conduction losses in the substitute part, provided voltage and current ratings are within specification.

Q: Are both parts compatible with the same PCB footprint?

A: Yes. Both parts use the TO-247-3 Through Hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Q: What is the thermal performance difference?

A: The IXTH6N120 supports 300W maximum power dissipation, while the STW7NK90Z is limited to 140W. For high-power applications, the IXTH6N120 is required.

Q: Do both parts meet the same regulatory standards?

A: Yes. Both the IXTH6N120 and STW7NK90Z are RoHS3 compliant and REACH Unaffected, meeting current environmental and supply chain requirements.

Q: What is the gate charge difference?

A: The IXTH6N120 has a gate charge of 56 nC at 10V, while the STW7NK90Z has 60.5 nC at 10V. This difference affects gate drive circuit design but is not a limiting factor for substitution.

Q: Can I use the STW7NK90Z in a lower-voltage version of my circuit?

A: Yes, provided the circuit voltage does not exceed 900V and the power dissipation requirement does not exceed 140W. The STW7NK90Z will operate correctly within these constraints.

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